Composition for forming silicon-containing film, method for forming film, and super straight

Patent metadata

Field	Value
Publication number	US-2026029706-A1
Application number	US-202519273989-A
Country	US
Kind code	A1
Filing date	Jul 18, 2025
Priority date	Jul 24, 2024
Publication date	Jan 29, 2026
Grant date	—

Abstract

The present invention is a composition for forming a silicon-containing film, the composition including a condensation-reactive thermally curable silicon-containing material (Sx) being a polysiloxane resin, wherein the material (Sx) has an organic group that forms a diol structure with a plasma treatment, the composition for forming a silicon-containing film has no aromatic ring, and a contact angle of the composition for forming a silicon-containing film after curing and after the plasma treatment relative to pure water is 20 degrees or less. This can provide in a super straight used for inkjet-adaptive planarization: a transparent composition for forming a silicon-containing film that planarizes a contact surface and that provides an appropriate contact angle with a plasma treatment; a method for forming a film using the composition; and a super straight main body using the composition.

First claim

1 . A composition for forming a silicon-containing film, the composition comprising a condensation-reactive thermally curable silicon-containing material (Sx) being a polysiloxane resin, wherein
the material (Sx) has an organic group that forms a diol structure with a plasma treatment, the composition for forming a silicon-containing film has no aromatic ring, and a contact angle of the composition for forming a silicon-containing film after curing and after the plasma treatment relative to pure water is 20 degrees or less.

2 . The composition for forming a silicon-containing film according to claim 1 , wherein
the polysiloxane resin of the material (Sx) comprises repeating units represented by the following formula (Sx-1), the following formula (Sx-2), and the following formula (Sx-3), and the composition for forming a silicon-containing film further comprises: the following crosslinking catalyst for polymerizing a siloxane (Xc) having no aromatic ring; an alcoholic organic solvent; and water,

wherein R 1 represents a monovalent organic group having 1 to 20 carbon atoms, having no aromatic ring, optionally having a substituent, and having one or more cyclic structures having an oxygen atom for forming the diol structure with the plasma treatment,

wherein Me represents a methyl group,

wherein R 208 , R 209 , R 210 , and R 211 each represent a hydrogen atom or a linear, branched, or cyclic alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, and a part or all of hydrogen atoms in these groups may be substituted with an alkoxy group, etc.; and R 208 and R 209 , or R 208 , R 209 , and R 210 may form a ring, and when forming the ring, R 208 and R 209 , and R 208 , R 209 , and R 210 represent an alkylene group having 3 to 10 carbon atoms.

3 . The composition for forming a silicon-containing film according to claim 2 , wherein R 1 represented in the general formula (Sx-1) is represented by the following general formula (A-1), and forms the diol structure with the plasma treatment,

wherein L represents a single bond or a divalent organic group having 1 to 5 carbon atoms; R 2 , R 3 , and R 4 each independently represent an organic group having 1 to 5 carbon atoms and optionally having a substituent; R 5 and R 6 each independently represent a hydrogen atom or an organic group having 1 to 5 carbon atoms and optionally having a substituent, and R 2 and R 6 may form a cyclic structure; and “*” represents an attachment point to a Si atom.

4 . A method for forming a silicon-containing film, the method comprising steps of:
forming a carbon hard mask layer on a substrate in which a film is optionally formed on a surface; and forming a film by curing the composition for forming a silicon-containing film according to claim 1 on the carbon hard mask layer.

5 . A method for forming a silicon-containing film, the method comprising steps of:
forming a carbon hard mask layer on a substrate in which a film is optionally formed on a surface; and forming a film by curing the composition for forming a silicon-containing film according to claim 2 on the carbon hard mask layer.

6 . A method for forming a silicon-containing film, the method comprising steps of:
forming a carbon hard mask layer on a substrate in which a film is optionally formed on a surface; and forming a film by curing the composition for forming a silicon-containing film according to claim 3 on the carbon hard mask layer.

7 . A method for forming a silicon-containing film, the method comprising steps of:
forming a carbon hard mask layer on a substrate in which a film is optionally formed on a surface; forming a film by curing the composition for forming a silicon-containing film according to claim 1 on the carbon hard mask layer; and subjecting the film to a plasma treatment to set a contact angle of a surface of the formed silicon-containing film relative to pure water to 20 degrees or less.

8 . A method for forming a silicon-containing film, the method comprising steps of:
forming a carbon hard mask layer on a substrate in which a film is optionally formed on a surface; forming a film by curing the composition for forming a silicon-containing film according to claim 2 on the carbon hard mask layer; and subjecting the film to a plasma treatment to set a contact angle of a surface of the formed silicon-containing film relative to pure water to 20 degrees or less.

9 . A method for forming a silicon-containing film, the method comprising steps of:
forming a carbon hard mask layer on a substrate in which a film is optionally formed on a surface; forming a film by curing the composition for forming a silicon-containing film according to claim 3 on the carbon hard mask layer; and subjecting the film to a plasma treatment to set a contact angle of a surface of the formed silicon-containing film relative to pure water to 20 degrees or less.

10 . A method for forming a silicon-containing film, the method comprising a step of applying the composition for forming a silicon-containing film according to claim 1 on a super straight comprising a quartz substrate or a laminated body, and subjecting the substrate on which the composition for forming a silicon-containing film is applied to a thermal treatment at a temperature of 100° C. or higher and 600° C. or lower for a range of 10 to 600 seconds to form a cured film.

11 . A method for forming a silicon-containing film, the method comprising a step of applying the composition for forming a silicon-containing film according to claim 2 on a super straight comprising a quartz substrate or a laminated body, and subjecting the substrate on which the composition for forming a silicon-containing film is applied to a thermal treatment at a temperature of 100° C. or higher and 600° C. or lower for a range of 10 to 600 seconds to form a cured film.

12 . A method for forming a silicon-containing film, the method comprising a step of applying the composition for forming a silicon-containing film according to claim 3 on a super straight comprising a quartz substrate or a laminated body, and subjecting the substrate on which the composition for forming a silicon-containing film is applied to a thermal treatment at a temperature of 100° C. or higher and 600° C. or lower for a range of 10 to 600 seconds to form a cured film.

13 . A super straight, comprising:
a main body of the super straight; a first layer having a proximal surface and a distal surface opposite to the proximal surface, wherein the main body is closer to the proximal surface of the first layer than to the distal surface of the first layer; and a second layer having a proximal surface and a distal surface opposite to the proximal surface, wherein the main body is closer to the proximal surface of the second layer than to the distal surface of the second layer, wherein the first layer is placed between the main body and the second layer, the second layer is a cured product of the composition for forming a silicon-containing film according to claim 1 , and a contact angle of the cured product after a plasma treatment relative to pure water is 20 degrees or less.

14 .

Assignees

• Shinetsu Chemical Co

Inventors

• Sawamura Takashi
• Mitsui Ryo
• Matsubara Satoshi

Classifications

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F1/22

  Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof · CPC title

• C08G77/18

  to alkoxy or aryloxy groups · CPC title

• C08G77/08

  characterised by the catalysts used · CPC title

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title