Semiconductor device

Patent metadata

Field	Value
Publication number	US-2025386579-A1
Application number	US-202519023622-A
Country	US
Kind code	A1
Filing date	Jan 16, 2025
Priority date	Jun 13, 2024
Publication date	Dec 18, 2025
Grant date	—

Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members. The semiconductor member includes a first semiconductor region. The first semiconductor region includes first to fourth partial regions. The first electrode portion is in contact with the fourth partial region. The first insulating member includes first and second insulating regions. The first insulating region is between the third electrode and the fourth partial region in the second direction. The second insulating region is between the first partial region and the third electrode in the first direction. The second insulating member includes a first insulating portion. The first insulating portion is between the second partial region and the first electrode portion in the first direction.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a first electrode; a second electrode, a direction from the first electrode to the second electrode being along a first direction, the second electrode including a first electrode portion and a second electrode portion connected to the first electrode portion; a third electrode, a semiconductor member including a first semiconductor region, the first semiconductor region including a first partial region, a second partial region, a third partial region, and a fourth partial region, a second direction from the first partial region to the second partial region crossing the first direction, the third partial region being between the first partial region and the second partial region in the second direction, the first partial region being between the first electrode and the third electrode in the first direction, the second partial region being between the first electrode and the first electrode portion in the first direction, the fourth partial region being between the third partial region and the second electrode portion in the first direction, the fourth partial region being between the third electrode and the first electrode portion in the second direction, the first electrode portion being in contact with the fourth partial region; a first insulating member including a first insulating region and a second insulating region, the first insulating region being between the third electrode and the fourth partial region in the second direction, the second insulating region being between the first partial region and the third electrode in the first direction; and a second insulating member including a first insulating portion, the first insulating portion being between the second partial region and the first electrode portion in the first direction.

2 . The semiconductor device according to claim 1 , further including:
a first conductive member, the first conductive member being between the second partial region and the first electrode portion in the first direction, and at least a part of the first insulating portion being between the first conductive member and the first electrode portion.

3 . The semiconductor device according to claim 2 , wherein
the first semiconductor region further includes a fifth partial region, the fifth partial region is between the first partial region and the second insulating region in the first direction, the second insulating member further includes a second insulating portion, and the second insulating portion is between the fifth partial region and the first conductive member in the second direction.

4 . The semiconductor device according to claim 2 , wherein
the first conductive member includes a first end and a second end, the first end is between the second end and the first insulating portion in the first direction, and an upper end distance along the first direction between the first electrode and the first end is shorter than a third electrode distance along the first direction between the first electrode and the third electrode.

5 . The semiconductor device according to claim 2 , wherein
the first conductive member is electrically connected to the second electrode.

6 . The semiconductor device according to claim 1 , wherein
the second electrode further includes a third electrode portion connected to the first electrode portion, and the third electrode portion is provided between the first insulating portion and the first electrode portion.

7 . The semiconductor device according to claim 6 , wherein
the first semiconductor region further includes a fifth partial region, the fifth partial region is between the first partial region and the second insulating region in the first direction, the second insulating member further includes a second insulating portion, and the second insulating portion is between the fifth partial region and the third electrode portion in the second direction.

8 . The semiconductor device according to claim 1 , wherein
a first electrode portion distance along the first direction between the first electrode and the first electrode portion is longer than a third electrode distance along the first direction between the first electrode and the third electrode.

9 . The semiconductor device according to claim 1 , wherein
the first electrode portion and the fourth electrode portion form a Schottky contact.

10 . The semiconductor device according to claim 1 , wherein
the first insulating region has a first thickness along the second direction, the second insulating region has a second thickness along the first direction, and the second thickness being thicker than the first thickness.

11 . The semiconductor device according to claim 10 , wherein
a ratio of the second thickness to the first thickness is greater than or equal to 1.1.

12 . The semiconductor device according to claim 1 , wherein
the semiconductor member further includes a second semiconductor region, the second semiconductor region is between the first partial region and the second insulating region in the first direction, the semiconductor member includes silicon, the second semiconductor region includes at least one first element selected from the group consisting of boron and aluminum, and the first semiconductor region does not include the first element, or a second concentration of the first element in the second semiconductor region is higher than a first concentration of the first element in the first semiconductor region.

13 . The semiconductor device according to claim 12 , wherein
the first semiconductor region includes at least one selected from the group consisting of phosphorus and arsenic.

14 . The semiconductor device according to claim 1 , wherein
the semiconductor member further includes a second semiconductor region, the second semiconductor region is between the first partial region and the second insulating region in the first direction, the first semiconductor region and the second semiconductor region satisfy a first condition or a second condition, in the first condition, the first semiconductor region is of one of the first conductivity type and the second conductivity type, and the second semiconductor region is of other one of the first conductivity type and the second conductivity type, and in the second condition, the first semiconductor region and the second semiconductor region are of the first conductivity type, and a second impurity concentration in the second semiconductor region is different from a first impurity concentration in the first semiconductor region.

15 . The semiconductor device according to claim 1 , wherein
the second conductive member is between the first partial region and the third electrode in the first direction, the first insulating member further includes a fourth insulating region, the second insulating region is between the second conductive member and the third electrode in the first direction, and the fourth insulating region is between the first partial region and the second conductive member in the first direction.

16 . The semiconductor device according to claim 1 , wherein
the first insulating member further includes a third insulating region, and the third insulating region is between the third electrode and at least a part of the second electrode portion in the first direction.

17 . The semiconductor device according to claim 1 , wherein
the first electrode portion includes a first face and a second face, the first face crosses

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Fukuda Taichi
• Baba Shotaro
• Nemoto Hiroki
• Inokuchi Tomoaki

Classifications

• H10D62/107

  Buried supplementary regions, e.g. buried guard rings  (multi-RESURF H10D62/111) · CPC title

• H10D48/36

  Unipolar devices · CPC title

• H10D64/117 Primary

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D64/647

  Schottky drain or source electrodes for IGFETs · CPC title

• H10D64/511

  for IGFETs · CPC title