Semiconductor structures and methods for multi-level work function
US-2015380520-A1 · Dec 31, 2015 · US
for IGFETs
for IGFETs · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D64/511 |
| Official title | {for IGFETs} |
| Display label | for IGFETs |
| Total patents | 1,458 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 130 |
| 2016 | 135 |
| 2017 | 161 |
| 2018 | 153 |
| 2019 | 179 |
| 2020 | 161 |
| 2021 | 135 |
| 2022 | 93 |
| 2023 | 101 |
| 2024 | 115 |
| 2025 | 78 |
| 2026 | 17 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device, resistor and manufacturing method of the same
US-2015371988-A1 · Dec 24, 2015 · US
Replacement gate structure for enhancing conductivity
US-2015372112-A1 · Dec 24, 2015 · US
Methods of forming metal silicide regions on a semiconductor device
US-9214463-B2 · Dec 15, 2015 · US
Gate contact with vertical isolation from source-drain
US-2015357409-A1 · Dec 10, 2015 · US
High freuency semiconductor switch and wireless device
US-9209800-B2 · Dec 8, 2015 · US
High-integration semiconductor device and method for fabricating the same
US-9209184-B2 · Dec 8, 2015 · US
Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process
US-9202890-B2 · Dec 1, 2015 · US
FinFET extension regions
US-9196712-B1 · Nov 24, 2015 · US
Semiconductor device and manufacturing method therefor
US-9190477-B2 · Nov 17, 2015 · US
Method for manufacturing laterally diffused metal oxide semiconductor device
US-9190280-B2 · Nov 17, 2015 · US
Iii-v transistor and method for manufacturing same
US-2015325689-A1 · Nov 12, 2015 · US
Structure and method for defect passivation to reduce junction leakage for finFET device
US-9184233-B2 · Nov 10, 2015 · US
Method of fabricating a lateral insulated gate bipolar transistor
US-2015303276-A1 · Oct 22, 2015 · US
Semiconductor devices and methods for manufacturing the same
US-9165935-B2 · Oct 20, 2015 · US
Semiconductor device
US-2015288357-A1 · Oct 8, 2015 · US
Semiconductor integrated circuit devices
US-2015287718-A1 · Oct 8, 2015 · US
Semiconductor device, resistor and manufacturing method of the same
US-9153488-B1 · Oct 6, 2015 · US
Gate contact with vertical isolation from source-drain
US-9147576-B2 · Sep 29, 2015 · US
Stressed nanowire stack for field effect transistor
US-2015270340-A1 · Sep 24, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D64/511?
- CPC H10D64/511 is the Cooperative Patent Classification code for “for IGFETs.”
- How many patents are filed under CPC H10D64/511 (for IGFETs)?
- Our database includes 1,458 publications tagged with this CPC code.
- Is patent activity under CPC H10D64/511 growing?
- Publication counts under this code: 115 in 2024 vs 78 in 2025 (latest complete years).