Optoelectronic component and method for producing same
US-12176444-B2 · Dec 24, 2024 · US
US2025364471A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025364471-A1 |
| Application number | US-202318873767-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 10, 2023 |
| Priority date | Jul 20, 2022 |
| Publication date | Nov 27, 2025 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A semiconductor device includes an electronic component and a board that are disposed opposite to each other in a first direction, and a solder that connects the electronic component and the board, in which the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the electronic component and the board, the solder contains Sn as a main component, and a variation in thickness of the bonding portion in the first direction is less than 2 micrometers.
Opening claim text (preview).
1 . A semiconductor device comprising: an electronic component and a board that are disposed opposite to each other in a first direction; and a solder that connects the electronic component and the board, wherein the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the first electrode and the second electrode, the solder contains Sn as a main component, and a variation in thickness of the bonding portion in the first direction is less than 2 micrometers. 2 . The semiconductor device according to claim 1 , wherein the electronic component and the solder form a ball grid array package. 3 . A semiconductor device comprising: an electronic component and a board that are disposed opposite to each other in a first direction; and a solder that connects the electronic component and the board, wherein the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the first electrode and the second electrode, the solder contains Sn as a main component, a variation in thickness of the bonding portion in the first direction is 2 micrometers or more, and a Bi content of the bonding portion is less than 3.0 wt %. 4 . The semiconductor device according to claim 3 , wherein the bonding portion has a Bi content of less than 3 .0 wt % and a Sb content of 3.0 wt % or more. 5 . A semiconductor device comprising: an electronic component and a board that are disposed opposite to each other in a first direction; and a solder that connects the electronic component and the board, wherein the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the first electrode and the second electrode, the solder contains Sn as a main component, a variation in thickness of the bonding portion in the first direction is 2 micrometers or more, and the bonding portion does not contain Bi and has a Sb content of 3.0 wt% or more.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
changes in materials · CPC title
Soldering or alloying · CPC title
Intermetallic compounds · CPC title
forming coatings · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.