Semiconductor Device

US2025364471A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2025364471-A1
Application numberUS-202318873767-A
CountryUS
Kind codeA1
Filing dateMay 10, 2023
Priority dateJul 20, 2022
Publication dateNov 27, 2025
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor device includes an electronic component and a board that are disposed opposite to each other in a first direction, and a solder that connects the electronic component and the board, in which the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the electronic component and the board, the solder contains Sn as a main component, and a variation in thickness of the bonding portion in the first direction is less than 2 micrometers.

First claim

Opening claim text (preview).

1 . A semiconductor device comprising: an electronic component and a board that are disposed opposite to each other in a first direction; and a solder that connects the electronic component and the board, wherein the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the first electrode and the second electrode, the solder contains Sn as a main component, and a variation in thickness of the bonding portion in the first direction is less than 2 micrometers. 2 . The semiconductor device according to claim 1 , wherein the electronic component and the solder form a ball grid array package. 3 . A semiconductor device comprising: an electronic component and a board that are disposed opposite to each other in a first direction; and a solder that connects the electronic component and the board, wherein the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the first electrode and the second electrode, the solder contains Sn as a main component, a variation in thickness of the bonding portion in the first direction is 2 micrometers or more, and a Bi content of the bonding portion is less than 3.0 wt %. 4 . The semiconductor device according to claim 3 , wherein the bonding portion has a Bi content of less than 3 .0 wt % and a Sb content of 3.0 wt % or more. 5 . A semiconductor device comprising: an electronic component and a board that are disposed opposite to each other in a first direction; and a solder that connects the electronic component and the board, wherein the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the first electrode and the second electrode, the solder contains Sn as a main component, a variation in thickness of the bonding portion in the first direction is 2 micrometers or more, and the bonding portion does not contain Bi and has a Sb content of 3.0 wt% or more.

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2025364471A1 cover?
A semiconductor device includes an electronic component and a board that are disposed opposite to each other in a first direction, and a solder that connects the electronic component and the board, in which the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bondin…
Who is the assignee on this patent?
Hitachi Astemo Ltd
What technology area does this patent fall under?
Primary CPC classification H10W72/072. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Nov 27 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).