Semiconductor device package and methods of formation

Patent metadata

Field	Value
Publication number	US-2025364391-A1
Application number	US-202519290728-A
Country	US
Kind code	A1
Filing date	Aug 5, 2025
Priority date	Jul 29, 2022
Publication date	Nov 27, 2025
Grant date	—

Abstract

An adhesion layer may be formed over portions of a redistribution layer (RDL) in a redistribution structure of a semiconductor device package. The portions of the RDL over which the adhesion layer is formed may be located in the “shadow” of (e.g., the areas under and/or over and within the perimeter of) one or more TIVs that are connected with the redistribution layer structure. The adhesion layer, along with a seed layer on which the portions of the RDL are formed, encapsulate the portions of the RDL in the shadow of the one or more TIVs, which promotes and/or increases adhesion between the portions of the RDL and the polymer layers of the redistribution structure.

First claim

What is claimed is:

1 . A method, comprising:
forming, over a carrier substrate, a first polymer layer of a redistribution structure; forming, over the first polymer layer, a first redistribution layer (RDL) of the redistribution structure; forming an adhesion layer over the first polymer layer and on the first RDL; removing the adhesion layer from first portions of the first RDL,
wherein the adhesion layer remains on second portions of the first RDL;
forming, above the first RDL, one or more second polymer layers and one or more second RDLs of the redistribution structure; and forming a plurality of through insulator vias (TIVs) on the redistribution structure,
wherein the plurality of TIVs are connected to at least one of the one or more second RDLs.

2 . The method of claim 1 , wherein the second portions of the first RDL are under the plurality of TIVs.

3 . The method of claim 1 , further comprising:
forming a seed layer on the first polymer layer,
wherein forming the first RDL comprises:
forming the first RDL on the seed layer,
wherein the adhesion layer and the seed layer encapsulate the

second portions of the first RDL.

4 . The method of claim 1 , further comprising:
forming another seed layer on a portion of the adhesion layer of at least one of the second portions of the first RDL; and forming a via structure on the other seed layer.

5 . The method of claim 1 , further comprising:
removing a portion of the adhesion layer from at least one of the second portions of the first RDL to expose a portion of the at least one of the second portions of the first RDL; forming another seed layer on the exposed portion of the at least one of the second portions of the first RDL; and forming a via structure on the other seed layer.

6 . The method of claim 1 , wherein the adhesion layer comprises titanium (Ti).

7 . The method of claim 1 , wherein forming the one or more second polymer layers comprises:
forming a polymer layer of the one or more polymer layers on the adhesion layer,
wherein the adhesion layer is configured to promote adhesion between the second portions of the first RDL and the polymer layer.

8 . The method of claim 1 , further comprising:
removing the adhesion layer from the first polymer layer prior to forming the one or more second polymer layers and the one or more second RDLs of the redistribution structure.

9 . A method, comprising:
forming a first subset of portions of a first redistribution layer (RDL) over a polymer layer that is over a substrate; forming a first subset of portions of a first adhesion layer on the first subset of portions of the first RDL; forming a subset of first via structures over the first subset of portions of the first adhesion layer; and forming a second adhesion layer over the first subset of portions of the first RDL and the subset of the first via structures.

10 . The method of claim 9 , further comprising:
forming the polymer layer over the substrate.

11 . The method of claim 9 , wherein the second adhesion layer surrounds a second subset of portions of the first RDL.

12 . The method of claim 9 , further comprising:
forming a subset of portions of a second RDL over the subset of first via structures,
wherein the second adhesion layer is further over the portions of the second RDL.

13 . The method of claim 12 , further comprising:
forming a subset of second via structures over the subset of portions of the second RDL,
wherein the second adhesion layer is further over the second via structures.

14 . The method of claim 13 , wherein the subset of second via structures extends to a surface of the second adhesion layer.

15 . The method of claim 9 , further comprising:
forming a seed layer over the polymer layer,
wherein the first subset of portions of the RDL is formed on the seed layer and resides on sidewalls of the seed layer.

16 . The method of claim 9 , further comprising:
forming a seed layer over the first subset of portions of the first adhesion layer,
wherein the subset of first via structures is formed on a first portion of the seed layer.

17 . The method of claim 16 , wherein the seed layer has the first portion and a second portion, wherein the first portion resides directly on the first subset of portions of the first adhesion layer, and wherein the second portion resides above the first portion and is spaced away from the first subset of portions of the first adhesion layer.

18 . A method, comprising:
forming a subset of portions of a first redistribution layer (RDL) over a polymer layer that is over a substrate; forming a subset of first via structures over the subset of portions of the first RDL; forming a subset of portions of a second RDL over the subset of first via structures; forming a subset of second via structures over the subset of portions of the second RDL; and forming an adhesion layer on the subset of portions of the first RDL, the subset of first via structures, the subset of portions of the second RDL, and the subset of second via structures.

19 . The method of claim 18 , further comprising:
forming a subset of through insulator vias (TIVs) over the subset of first vias and the adhesion layer.

20 . The method of claim 19 , further comprising:
forming an encapsulation layer over the subset of TIVs and on the adhesion layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Kuo Ting-Ting
• Huang Li-Hsien
• Yang Tien-Chung
• Chuang Yao-Chun
• Lu Yinlung
• He Jun

Classifications

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W72/823

  Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip · CPC title

• H10W90/20

  Configurations of stacked chips · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title