Euv lithography mask blanks, euv masks and methods

Patent metadata

Field	Value
Publication number	US-2025362581-A1
Application number	US-202519291378-A
Country	US
Kind code	A1
Filing date	Aug 5, 2025
Priority date	Dec 27, 2023
Publication date	Nov 27, 2025
Grant date	—

Abstract

An EUV lithography mask including a substrate, a patterned absorber layer including an alloy of rhodium. In some embodiments, the alloy of rhodium includes a group 5, group 6, group 9, group 10, or group 11 transition metal having a specific EUV refractive index and a specific EUV extinction coefficient. The disclosed EUV lithography masks reduce undesirable mask 3D effects.

First claim

What is claimed is:

1 . An extreme ultraviolet (EUV) mask, comprising:
a substrate having a first surface and a second surface opposite to the first surface; a reflective multilayer stack on the first surface of the substrate, the reflective multilayer having a third surface facing away from the substrate; a capping layer on the third surface of the reflective multilayer stack, the capping layer having a fourth surface facing away from the reflective multilayer stack; a buffer layer on the fourth surface of the capping layer, the buffer layer separated from the reflective multilayer stack by the capping layer, the buffer layer having a fifth surface facing away from the capping layer; an absorber layer having a thickness between 20-50 nanometers, the absorber layer on the fifth surface of the buffer layer, the absorber layer having a sixth surface facing away from the buffer layer; and respective openings of a plurality of openings extend into the sixth surface of the absorber layer and extend entirely through the absorber layer, the respective openings of the plurality of openings extend into the fifth surface of the buffer layer and extend entirely through the buffer layer to the fourth surface of the capping layer, the respective openings of the plurality of openings expose respective regions of the fourth surface of the capping layer, and the respective regions of the fourth surface of the capping layer delimit respective ends of the respective openings of the plurality of openings.

2 . The EUV mask of claim 1 , wherein the absorber layer includes an alloy of a first material and a second material, wherein the first material is rhodium (Rh) having an EUV refractive index (n) and an EUV extinction coefficient (k) and wherein the second material is a group 5, group 6, group 9, group 10 or group 11 transition metal having an EUV refractive index (n) greater than the EUV refractive index (n) of rhodium and an EUV extinction coefficient (k) greater than the EUV extinction coefficient (k) of rhodium.

3 . The EUV mask of claim 2 , wherein the second material is a period 4, period 5, or period 6 transition metal.

4 . The EUV mask of claim 2 , wherein the alloy includes one or more of oxygen (O), nitrogen (N), or boron (B).

5 . The EUV mask of claim 4 , wherein the alloy includes oxygen (O) and one of either nitrogen (N) or boron (B).

6 . The EUV mask of claim 4 , wherein the alloy contains 2-20 atomic % of oxygen (O), nitrogen (N), boron (B) or combinations thereof.

7 . The EUV mask of claim 2 , wherein the alloy provides a phase shift of between 1.17π to 1.2π.

8 . The EUV mask of claim 2 , wherein the alloy contains 10-75 atomic % rhodium.

9 . The EUV mask of claim 2 , wherein the alloy forms a first sublayer of the absorber layer and the absorber layer further includes a second sublayer, the second sublayer including an alloy of rhodium (Rh).

10 . The EUV mask of claim 9 , wherein the alloy of rhodium of the second sublayer includes a group 5, group 6, group 9, group 10, or group 11 transition metal.

11 . The EUV mask of claim 10 , wherein the alloy of rhodium of the second sublayer includes nitrogen (N) or boron (B), but not oxygen (O).

12 . The EUV mask of claim 2 , wherein the EUV refractive index (n) of rhodium equals about 0.875 and the EUV extinction coefficient (k) of rhodium equals about 0.031.

13 . The EUV mask of claim 1 , further comprising a plurality of trenches, each respective trench of the plurality of trenches extends into and through the entirety of absorber layer, the buffer layer, the capping layer, and the reflective multilayer stack.

14 . The EUV mask of claim 13 , wherein the respective trenches of the plurality of trenches expose respective regions of the first surface of the substrate, and the respective regions of the first surface of the substrate delimit respective ends of the respective trenches of the plurality of trenches.

15 . An extreme ultraviolet (EUV) mask, comprising:
a substrate including a first surface and a second surface opposite to the first surface; a reflective multilayer stack on the substrate on the first surface of the substrate, the reflective multilayer having a third surface facing away from the substrate; a capping layer on the multilayer stack on the third surface of the reflective multilayer stack, the capping layer having a fourth surface facing away from the reflective multilayer stack; a buffer layer on the fourth surface of the capping layer, the buffer layer separated from the reflective multilayer stack by the capping layer, the buffer layer having a fifth surface facing away from the capping layer; an absorber layer on the fifth surface of the buffer layer, the absorber layer including an alloy of a first material and a second material, the first material having an EUV refractive index (n) and an EUV extinction coefficient (k) and the second material having an EUV refractive index (n) and an EUV extinction coefficient (k), wherein, in a plot of EUV refractive index (n) vs EUV extinction coefficient (k) for the first material and the second material, a line between a first material coordinate defined by the EUV refractive index (n) and the EUV extinction coefficient (k) of the first material and a second material coordinate defined by the EUV refractive index (n) and the EUV extinction coefficient (k) of the second material passes through a polygon defined in a plot of four coordinates (n, k), the four coordinates being (0.880, 0.030), (0.880, 0.050), (0.900, 0.050) and (0.900, 0.030); and respective openings of a plurality of openings extend into a sixth surface of the absorber layer and extend entirely through the absorber layer, the respective openings of the plurality of openings extend into the fifth surface of the buffer layer and extend entirely through the buffer layer to the fourth surface of the capping layer, the respective openings of the plurality of openings expose respective regions of the fourth surface of the capping layer, and the respective regions of the fourth surface of the capping layer delimit respective ends of the respective openings of the plurality of openings.

16 . The EUV mask of claim 15 , further comprising a plurality of trenches, each respective trench of the plurality of trenches extends into and through the entirety of absorber layer, the buffer layer, the capping layer, and the reflective multilayer stack.

17 . The EUV mask of claim 16 , wherein the respective trenches of the plurality of trenches expose respective regions of the first surface of the substrate, and the respective regions of the first surface of the substrate delimit respective ends of the respective trenches of the plurality of trenches.

18 . An extreme ultraviolet (EUV) mask, comprising:
a substrate having a first surface and a second surface opposite to the first surface; a reflective multilayer stack on the first surface of the substrate, the reflective multilayer having a third surface facing away from the substrate; a capping layer on the third surface of the reflective multilayer stack, the capping layer having a fourth surface facing away from the reflective multilayer stack; a buffer layer on the fourth surface of the capping layer, the buffer layer separated from the reflective multilayer stack by the capping layer, the buffer layer having a fifth surface facing away from the capping layer; an absorber layer on the fifth surface of the buffer layer, the absorber layer having a sixth surface facing away from the buffer layer; respective openings o

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Sih-Wei
• Hsu Pei-Cheng
• Wang Hsuan-I
• Kao Yu-Hsiang
• Yu Ching-Fang
• Lee Hsin-Chang

Classifications

• G03F1/54

  Absorbers, e.g. of opaque materials · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title