Three-dimensional stacked semiconductor devices

Patent metadata

Field	Value
Publication number	US-2025311243-A1
Application number	US-202418769342-A
Country	US
Kind code	A1
Filing date	Jul 10, 2024
Priority date	Apr 2, 2024
Publication date	Oct 2, 2025
Grant date	—

Abstract

Systems, devices, and methods for a semiconductor device are provided. In one aspect, a semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a plurality of first channel structures extending along a first direction and a plurality of connecting structures. Each connecting structure includes a first region of a first conductive type, a second region of a second conductive type, and a third region of the first conductive type. A first end of a first channel structure is in contact with the first region of a corresponding connecting structure. The semiconductor device further includes a second semiconductor structure, which includes a plurality of second channel structures extending along the first direction. The first semiconductor structure and the second semiconductor structure are bonded along the first direction. The corresponding connecting structure is coupled to a first end of a corresponding second channel structure.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a first semiconductor structure comprising a plurality of first channel structures extending along a first direction and a plurality of connecting structures, each of the plurality of connecting structures comprising a first region of a first conductive type, a second region of a second conductive type, and a third region of the first conductive type, a first end of a first channel structure of the plurality of first channel structures being in contact with the first region of a corresponding connecting structure of the plurality of connecting structures; and a second semiconductor structure comprising a plurality of second channel structures extending along the first direction, wherein the first semiconductor structure and the second semiconductor structure are bonded along the first direction, and wherein the corresponding connecting structure is coupled to a first end of a corresponding second channel structure of the plurality of second channel structures.

2 . The semiconductor device of claim 1 , wherein the first conductive type is N conductive type, and the second conductive type is P conductive type.

3 . The semiconductor device of claim 1 ,
wherein the first semiconductor structure comprises a first conductive line coupled to a second end of the first channel structure, the second end of the first channel structure being opposite to the first end of the first channel structure along the first direction, and wherein the second semiconductor structure comprises a second conductive line coupled to a second end of the corresponding second channel structure, the first end of the corresponding second channel structure being opposite to the second end of the corresponding second channel structure along the first direction.

4 . The semiconductor device of claim 1 , wherein the first semiconductor structure further comprises a plurality of conductive structures, a conductive structure of the plurality of conductive structures being in contact with the first region or the third region of the corresponding connecting structure.

5 . The semiconductor device of claim 1 , wherein the second semiconductor structure comprises a plurality of conductive contacts isolated by a dielectric material, a first end of a conductive contact of the plurality of conductive contacts being coupled to the third region of the corresponding connecting structure, a second end of the conductive contact of the plurality of conductive contacts being coupled to the corresponding second channel structure of the plurality of second channel structures, the first end being opposite to the second end along the first direction.

6 . The semiconductor device of claim 1 , wherein the second region of the corresponding connecting structure is connected to a conductive line, and a thickness of the second region of the corresponding connecting structure is equal to or larger than a thickness of the conductive line.

7 . The semiconductor device of claim 6 , wherein the thickness of the second region is a dimension of the second region along the first direction, and the thickness of the conductive line is a dimension of the conductive line along the first direction.

8 . The semiconductor device of claim 1 , wherein each of the plurality of second channel structures comprises a channel plug.

9 . A semiconductor device, comprising:
a first semiconductor structure comprising a plurality of first channel structures extending along a first direction and a plurality of connecting structures, each of the plurality of connecting structures comprising a first region of a first conductive type and a second region of a second conductive type, a first end of a first channel structure of the plurality of first channel structures being in contact with the first region of a corresponding connecting structure of the plurality of connecting structures; and a second semiconductor structure comprising a plurality of second channel structures extending along the first direction, each of the plurality of second channel structures comprising a channel plug in a first end of the second channel structure, the channel plug comprising a third region of the first conductive type, wherein the first semiconductor structure and the second semiconductor structure are bonded along the first direction, and wherein the corresponding connecting structure is coupled to a channel plug of a corresponding second channel structure of the plurality of second channel structures.

10 . The semiconductor device of claim 9 , wherein the first conductive type is N conductive type, and the second conductive type is P conductive type.

11 . The semiconductor device of claim 9 ,
wherein the first semiconductor structure comprises a first conductive line coupled to a second end of the first channel structure, the first end of the first channel structure being opposite to the second end of the first channel structure along the first direction, and wherein the second semiconductor structure comprises a second conductive line coupled to a second end of the corresponding second channel structure, the first end of the corresponding second channel structure being opposite to the second end of the corresponding second channel structure.

12 . The semiconductor device of claim 9 , wherein the first semiconductor structure further comprises a plurality of conductive structures, a conductive structure of the plurality of conductive structures being in contact with the second region of the corresponding connecting structure.

13 . The semiconductor device of claim 9 , wherein the second semiconductor structure comprises a plurality of conductive contacts isolated by a dielectric material, a first end of a conductive contact of the plurality of conductive contacts being coupled to the second region of the corresponding connecting structure, a second end of the conductive contact being coupled to the channel plug of the corresponding second channel structure, the first end being opposite to the second end along the first direction.

14 . The semiconductor device of claim 9 , wherein the second region of the corresponding connecting structure is connected to a conductive line, and a thickness of the second region of the corresponding connecting structure is equal to or larger than a thickness of the conductive line.

15 . The semiconductor device of claim 14 , wherein the thickness of the second region is a dimension of the second region along the first direction, and the thickness of the conductive line is a dimension of the conductive line along the first direction.

16 . A method for forming a semiconductor device, comprising:
providing a first semiconductor structure comprising a plurality of first channel structures extending along a first direction and a plurality of connecting structures, a first end of a first channel structure of the plurality of first channel structures being in contact with a corresponding connecting structure of the plurality of connecting structures; providing a second semiconductor structure comprising a plurality of second channel structures extending along the first direction, each of the plurality of second channel structures comprising a channel plug in a first end of the second channel structure; and bonding the first semiconductor structure and the second semiconductor structure, wherein the corresponding connecting structure is coupled to a channel plug of a corresponding second channel structure of the plurality of second channel structures.

17 . The method of

Assignees

• Yangtze Memory Tech Co Ltd

Inventors

• Liu Xiaoxin
• Huo Zongliang

Classifications

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W90/792

  between multiple chips · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10B43/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title