Polyimide-based binder for power storage device, electrode mixture paste, negative electrode active material layer, negative electrode sheet for power storage device, and power storage device
US-12176543-B2 · Dec 24, 2024 · US
US2025309248A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025309248-A1 |
| Application number | US-202318863925-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 14, 2023 |
| Priority date | May 11, 2022 |
| Publication date | Oct 2, 2025 |
| Grant date | — |
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An active material includes silicon. The active material has voids inside primary particles, and a void volume X of voids having a pore diameter of 10 nm or less among the voids is 0.015 cc/g or more.
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What is claimed is: 1 . An active material comprising silicon, wherein the active material has voids inside primary particles, and a void volume X of voids having a pore diameter of 10 nm or less among the voids is 0.015 cc/g or more. 2 . The active material according to claim 1 , wherein the void volume X is 0.09 cc/g or less. 3 . The active material according to claim 1 , wherein a void volume Y of voids having a pore diameter of 50 nm or less among the voids is 0.05 cc/g or more and 0.25 cc/g or less. 4 . The active material according to claim 3 , wherein a ratio (X/Y) of the void volume X to the void volume Y is 0.17 or more and 0.41 or less. 5 . The active material according to claim 1 , wherein a void volume Z of voids having a pore diameter of 100 nm or less among the voids is 0.05 cc/g or more and 0.40 cc/g or less. 6 . The active material according to claim 5 , wherein a ratio (X/Z) of the void volume X to the void volume Z is 0.10 or more and 0.34 or less. 7 . The active material according to claim 1 , wherein the active material has a crystal phase of Type II silicon clathrate. 8 . The active material according to claim 7 , wherein: a peak A at 2θ=20.09°±0.50° and a peak B at 2θ=31.72°±0.50° are observed as peaks of the crystal phase of the Type II silicon clathrate in X-ray diffraction measurement using CuKα rays; and when an intensity of the peak A is I A , an intensity of the peak B is I B , and a maximum intensity at 2θ=22° to 23° is I M , I A /I M is 1.75 or more and 10 or less, and I B /I M is 1.35 or more and 7 or less. 9 . The active material according to claim 1 , wherein the active material has a crystal phase of diamond-type silicon. 10 . A negative electrode layer comprising an active material including silicon, wherein the active material has voids inside primary particles, and a void volume P of voids having a pore diameter of 10 nm or less among the voids is 0.015 cc/g or more. 11 . The negative electrode layer according to claim 10 , wherein the void volume P is 0.031 cc/g or less. 12 . The negative electrode layer according to claim 10 , wherein a void volume Q of voids having a pore diameter of 50 nm or less among the voids is 0.035 cc/g or more and 0.11 cc/g or less. 13 . The negative electrode layer according to claim 12 , wherein a ratio (P/Q) of the void volume P to the void volume Q is 0.22 or more and 0.39 or less. 14 . The negative electrode layer according to claim 10 , wherein a void volume R of voids having a pore diameter of 100 nm or less among the voids is 0.053 cc/g or more and 0.16 cc/g or less. 15 . The negative electrode layer according to claim 14 , wherein a ratio (P/R) of the void volume P to the void volume R is 0.14 or more and 0.30 or less. 16 . A battery comprising: the negative electrode layer according to claim 10 ; a positive electrode layer; and an electrolyte layer disposed between the positive electrode layer and the negative electrode layer. 17 . A method for producing the active material according to claim 1 , the method comprising: obtaining a Na—Si alloy by causing a sodium source and a silicon source to react with each other; and producing a silicon clathrate-type crystal phase by heating the Na—Si alloy to reduce an amount of sodium in the Na—Si alloy, wherein the producing the silicon clathrate-type crystal phase uses a scavenger to scavenge the sodium in the Na—Si alloy. 18 . A method for producing a negative electrode layer, the method comprising: producing an active material by the method for producing the active material according to claim 17 ; and forming the negative electrode layer by using the active material. 19 . A method for producing a battery, the method comprising: producing an active material by the method for producing the active material according to claim 17 ; and forming a negative electrode layer by using the active material.
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