Methods and apparatuses for removing temporary bonding material

Patent metadata

Field	Value
Publication number	US-2025308927-A1
Application number	US-202418987957-A
Country	US
Kind code	A1
Filing date	Dec 19, 2024
Priority date	Mar 29, 2024
Publication date	Oct 2, 2025
Grant date	—

Abstract

Methods and apparatuses to remove temporary bonding material (e.g., residue material, bulk material, a material layer) from surfaces of substrates are disclosed. A first substrate has a thickness of less than about 400 um and comprises a first surface and a second surface opposite the first surface. A temporary bonding material is disposed on the second surface of the first substrate. A method comprises attaching the first substrate to a second substrate such that the first surface of the first substrate is attached to a surface of the second substrate. The method further comprises mechanically scrubbing the temporary bonding material disposed on the second surface of the first substrate with a chemical mechanical polishing (CMP) pad to remove the temporary bonding material from the second surface of the first substrate.

First claim

1 . A method comprising:
providing a first substrate having a thickness of less than about 400 um, the first substrate comprising a first surface and a second surface opposite the first surface, wherein a temporary bonding material is disposed on the second surface of the first substrate; and attaching the first substrate to a second substrate such that the first surface of the first substrate is attached to a surface of the second substrate; and mechanically scrubbing the temporary bonding material disposed on the second surface of the first substrate with a chemical mechanical polishing (CMP) pad to remove the temporary bonding material from the second surface of the first substrate.

2 . The method of claim 1 , further comprising using deionized water, with or without surfactants or detergent, and/or a combination thereof without a slurry comprising abrasive particles while mechanically scrubbing.

3 . The method of claim 1 , further comprising using a slurry comprising abrasive particles while mechanically scrubbing.

4 . The method of claim 1 , further comprising rotating the CMP pad in an orbital motion while mechanically scrubbing.

5 . The method of claim 1 , further comprising rotating the first substrate while mechanically scrubbing.

6 . The method of claim 1 , further comprising before or after mechanically scrubbing the temporary bonding material disposed on the second surface of the first substrate, plasma ashing the first substrate.

7 . The method of claim 1 , wherein:
prior to mechanically scrubbing, the first substrate is bonded to a third substrate with temporary bonding adhesive; the method further comprises prior to mechanically scrubbing, debonding the first substrate from the third substrate; and the temporary bonding material disposed on the second surface of the first substrate comprises temporary bonding adhesive residue.

8 . The method of claim 1 , further comprising:
disposing a protective coating on a mechanically scrubbed second surface of the first substrate; attaching the first substrate to a temporary carrier such that the protective coating on the second surface of the first substrate is attached to a surface of the temporary carrier; and removing the second substrate from the first substrate.

9 . The method of claim 8 , wherein:
attaching the first substrate to the second substrate comprises attaching the first substrate to the second substrate using double sided tape; and removing the second substrate from the first substrate comprises removing the double sided tape and the second substrate from the first surface of the first substrate.

10 . The method of claim 8 , the method further comprising:
flipping the first substrate such that the first surface of the first substrate is attached to the surface of the temporary carrier; and dicing the first substrate.

11 . The method of claim 1 , wherein the thickness of the first substrate is less than about 100 um.

12 . The method of claim 1 , wherein the thickness of the first substrate is less than about 50 um.

13 . The method of claim 1 , wherein the thickness of the first substrate is less than about 20 um.

14 . The method of claim 1 , wherein the temporary bonding material comprises inorganic material.

15 . The method of claim 1 , wherein the temporary bonding material comprises organic material.

16 . The method of claim 1 , wherein the temporary bonding material comprises at least one of: an ultraviolet (UV) cured polymer, a thermal plastic polymer, or a polyimide.

17 . A apparatus comprising:
a holder for securing a tape frame; and an air pressure chamber capable of applying pressure to a substrate disposed on a tape held by the tape frame against a CMP pad.

18 . The apparatus of claim 17 , wherein the air pressure chamber is capable of applying a pressure between about 0.5 PSI to 3 PSI.

19 . An apparatus comprising:
a roller; and chemical mechanical polishing (CMP) pad material attached to the roller, wherein the roller is covered, at least partially, by the CMP pad material.

20 . The apparatus of claim 19 , wherein the apparatus further comprises:
a holder capable of holding a substrate against the CMP pad material attached to the roller; and a dispensing mechanism to deliver DI water, surfactants, detergent, or a CMP slurry to the substrate.

Assignees

• Adeia Semiconductor Bonding Technologies Inc

Inventors

• Gao Guilian
• Fountain Jr Gaius Gillman

Classifications

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title