Hybrid in-memory/pageable spatial column data
US-2024311371-A1 · Sep 19, 2024 · US
US2025307143A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025307143-A1 |
| Application number | US-202418622376-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 29, 2024 |
| Priority date | Mar 29, 2024 |
| Publication date | Oct 2, 2025 |
| Grant date | — |
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A stacked die extension over a processor core to improve thermal management, communication latency, and routing complexity of semiconductor devices is described. In one or more implementations, a stacked-die semiconductor device includes a first die having a processor core, and at least one second die including a processor-core extension positioned either above or below a portion of the processor core. In one or more implementations a system includes a stacked-die semiconductor device and a memory device. The stacked-die semiconductor device has a first die that includes a processor core and at least one second die that includes a processor-core extension positioned either above or below a portion of the processor core. The memory device is operatively coupled to the processor-core extension to exchange data with the processor core.
Opening claim text (preview).
What is claimed is: 1 . A stacked-die semiconductor device comprising: a first die having a processor core; and at least one second die including a processor-core extension positioned either above or below a portion of the processor core. 2 . The stacked-die semiconductor device of claim 1 , wherein the processor-core extension comprises a cache extension operatively coupled to the processor core. 3 . The stacked-die semiconductor device of claim 2 , wherein the first die further comprises a cache operatively coupled to the cache extension. 4 . The stacked-die semiconductor device of claim 3 , wherein the cache extension is a higher order cache than the cache within the first die. 5 . The stacked-die semiconductor device of claim 3 , wherein the portion of the processor core comprises at least part of the cache within the first die. 6 . The stacked-die semiconductor device of claim 3 , wherein the portion of the processor core comprises at least one of a data cache of the cache within the first die, a load store unit of the cache within the first die, or a load store unit of the cache extension. 7 . The stacked-die semiconductor device of claim 3 , wherein the cache within the first die comprises a first order cache operatively coupled to the processor core, the cache extension comprises a second order cache operatively coupled to the processor core, and the stacked-die semiconductor device further comprises at least one third die with a third order cache operatively coupled to the processor core. 8 . The stacked-die semiconductor device of claim 1 , further comprising a die-to-die interconnect arranged between the first die and the at least one second die to transfer power and signals between the processor core and the processor-core extension. 9 . The stacked-die semiconductor device of claim 8 , wherein the die-to-die interconnect comprises at least one of micro bumps, hybrid bonds, or through-silicon vias. 10 . The stacked-die semiconductor device of claim 1 , wherein the processor-core extension comprises a floating-point unit operatively coupled to the processor core. 11 . A system comprising: a stacked-die semiconductor device that includes a first die that includes a processor core and at least one second die that includes a processor-core extension positioned either above or below a portion of the processor core; and a memory device operatively coupled to the processor-core extension to exchange data with the processor core. 12 . The system of claim 11 , further comprising a heatsink configured to dissipate thermal energy from the stacked-die semiconductor device. 13 . The system of claim 12 , wherein the at least one second die is positioned between the first die and the heatsink. 14 . The system of claim 13 , wherein the heatsink comprises an approximately uniform thickness relative the processor-core extension and the processor core. 15 . The system of claim 11 , wherein the processor-core extension comprises a floating point unit operatively coupled to the processor core. 16 . The system of claim 11 , wherein the processor-core extension comprises a cache extension operatively coupled to the processor core. 17 . The system of claim 11 , wherein the processor-core extension comprises at least one of a programmable accelerator extension, a matrix extension for matrix math, a branch prediction unit, an artificial intelligence accelerator, an audio accelerator, a video accelerator, or a cryptography extension for encryption or decryption of the data exchanged with the processor core. 18 . A method of forming a stacked-die semiconductor device, the method comprising: integrating a processor core within a first die of the stacked-die semiconductor device; arranging at least one second die of the stacked-die semiconductor device either above or below the first die; and integrating a processor-core extension within the at least one second die either above or below a portion the processor core. 19 . The method of claim 18 , wherein the portion of the processor core comprises a level one cache and a level one load store unit, and integrating the processor-core extension comprises integrating a level two cache or a level three cache within the at least one second die either above or below the level one load store unit of the processor core. 20 . The method of claim 18 , further comprising: arranging a heatsink having an approximately uniform thickness adjacent to the at least one second die such that the processor-core extension is between the heatsink and the processor core.
Details of cache memory · CPC title
with dedicated cache, e.g. instruction or stack · CPC title
Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches · CPC title
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