Method of manufacturing gas barrier film

Patent metadata

Field	Value
Publication number	US-2025305119-A1
Application number	US-202519238885-A
Country	US
Kind code	A1
Filing date	Jun 16, 2025
Priority date	Jan 12, 2023
Publication date	Oct 2, 2025
Grant date	—

Abstract

Provided is a method of manufacturing a gas barrier film in which, in a case where a film is continuously formed on an elongated support through RtoR, abnormal discharge can be suppressed, and a gas barrier film having high gas barrier performance can be stably prepared. There is provided a method of manufacturing a gas barrier film, the method including: forming an inorganic layer on an elongated support or on an underlying organic layer on the support while transporting the support in a longitudinal direction, in which a plasma is generated by supplying raw material gas between the support and a conductor electrode having a porous structure that is disposed to face the support, and the inorganic layer is formed using a plasma chemical vapor deposition method, and before a main film forming step of forming the inorganic layer on the support or on the underlying organic layer on the support, a preliminary film forming step is provided, the preliminary film forming step being a step of forming an insulating inorganic layer having a lower density than the inorganic layer on a surface of the conductor electrode by setting power that is applied to the conductor electrode to be lower than power in the main film forming step while continuing the supply of the raw material gas and the application of the power until the main film forming step.

First claim

What is claimed is:

1 . A method of manufacturing a gas barrier film, the method comprising:
forming an inorganic layer on an elongated support or on an underlying organic layer on the support while transporting the support in a longitudinal direction, wherein a plasma is generated by supplying raw material gas between the support and a conductor electrode having a porous structure that is disposed to face the support, and the inorganic layer is formed using a plasma chemical vapor deposition method, and before a main film forming step of forming the inorganic layer on the support or on the underlying organic layer on the support, a preliminary film forming step is provided, the preliminary film forming step being a step of forming an insulating inorganic layer having a lower density than the inorganic layer on a surface of the conductor electrode by setting power that is applied to the conductor electrode to be lower than power in the main film forming step while continuing the supply of the raw material gas and the application of the power until the main film forming step.

2 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein the power that is applied to the conductor electrode in the preliminary film forming step is 20% to 50% of the power in the main film forming step.

3 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein during transition from the preliminary film forming step to the main film forming step, the power is changed stepwise from the power in the preliminary film forming step to the power in the main film forming step.

4 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein a transportation speed of the support in the preliminary film forming step is slower than a transportation speed of the support in the main film forming step, and during transition from the preliminary film forming step to the main film forming step, the transportation speed of the support is increased.

5 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein a ratio of a density of the insulating inorganic layer to a density of the inorganic layer is 0.3 to 0.8.

6 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein a ratio of a total area of holes to an area of a discharge surface of the conductor electrode is 0.005 to 0.2.

7 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein a sprayed film having a surface roughness Ra of 1 μm to 20 μm is provided on a discharge surface of the conductor electrode.

8 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein in the preliminary film forming step, particles are measured, and transition to the main film forming step starts along with an increase in particles.

9 . The method of manufacturing a gas barrier film according to claim 8 ,
wherein in the preliminary film forming step, a particle monitor that measures the particles is mounted at a position distant from a film formation chamber where the formation of the inorganic layer is performed.

10 . The method of manufacturing a gas barrier film according to claim 9 ,
wherein an exhaust pipe connected to the film formation chamber is branched and connected to the particle monitor to measure particles during exhaust.

11 . The method of manufacturing a gas barrier film according to claim 10 ,
wherein a path length from the film formation chamber to the particle monitor is 0.5 m to 2 m.

12 . The method of manufacturing a gas barrier film according to claim 1 ,
wherein a temperature of the conductor electrode in the main film forming step is adjusted.

13 . The method of manufacturing a gas barrier film according to claim 2 ,
wherein during transition from the preliminary film forming step to the main film forming step, the power is changed stepwise from the power in the preliminary film forming step to the power in the main film forming step.

14 . The method of manufacturing a gas barrier film according to claim 2 ,
wherein a transportation speed of the support in the preliminary film forming step is slower than a transportation speed of the support in the main film forming step, and during transition from the preliminary film forming step to the main film forming step, the transportation speed of the support is increased.

15 . The method of manufacturing a gas barrier film according to claim 2 ,
wherein a ratio of a density of the insulating inorganic layer to a density of the inorganic layer is 0.3 to 0.8.

16 . The method of manufacturing a gas barrier film according to claim 2 ,
wherein a ratio of a total area of holes to an area of a discharge surface of the conductor electrode is 0.005 to 0.2.

17 . The method of manufacturing a gas barrier film according to claim 2 ,
wherein a sprayed film having a surface roughness Ra of 1 μm to 20 μm is provided on a discharge surface of the conductor electrode.

18 . The method of manufacturing a gas barrier film according to claim 2 ,
wherein in the preliminary film forming step, particles are measured, and transition to the main film forming step starts along with an increase in particles.

19 . The method of manufacturing a gas barrier film according to claim 18 ,
wherein in the preliminary film forming step, a particle monitor that measures the particles is mounted at a position distant from a film formation chamber where the formation of the inorganic layer is performed.

20 . The method of manufacturing a gas barrier film according to claim 19 ,
wherein an exhaust pipe connected to the film formation chamber is branched and connected to the particle monitor to measure particles during exhaust.

Assignees

• Fujifilm Corp

Inventors

• Mochizuki Yoshihiko
• Iwase Eijiro

Classifications

• C23C16/0272

  Deposition of sub-layers, e.g. to promote the adhesion of the main coating · CPC title

• C23C16/505

  using radio frequency discharges · CPC title

• C23C16/45565

  Shower nozzles · CPC title

• C23C16/545

  for coating elongated substrates · CPC title

• C23C16/345 Primary

  Silicon nitride · CPC title