Selective passivation and selective deposition

Patent metadata

Field	Value
Publication number	US-2025279275-A1
Application number	US-202519204490-A
Country	US
Kind code	A1
Filing date	May 10, 2025
Priority date	Oct 2, 2018
Publication date	Sep 4, 2025
Grant date	—

Abstract

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

First claim

What is claimed is:

1 . A method of selective deposition on a first surface of a three-dimensional structure relative to one or more second surfaces of a three-dimensional structure, which comprises a trench, the method comprising:
conformally depositing an inhibitor layer in the trench of the three-dimensional structure; patterning the inhibitor layer to expose a region of the bottom of the trench; baking the inhibitor layer remaining in regions other than the exposed region of the trench; selectively depositing a metal layer on the exposed region of the bottom of the trench; and removing the inhibitor layer remaining on surfaces of the trench.

2 . The method of claim 1 , wherein the inhibitor layer is a polyimide layer.

3 . The method of claim 1 , wherein the depositing the inhibitor layer comprises non-selectively depositing the inhibitor layer on the three-dimensional structure in the bottom of the trench.

4 . The method of claim 1 , wherein the patterning the inhibitor layer to expose the region of the bottom of the trench comprises anisotropic etching to remove the inhibitor layer from the region of the bottom of the trench.

5 . The method of claim 1 , wherein the selectively depositing of the metal layer comprises vapor deposition.

6 . The method of claim 1 , wherein the selectively depositing of the metal layer deposits the metal layer on areas not covered with the inhibitor layer.

7 . The method of claim 1 , wherein the metal layer is one of an aluminum oxide or titanium nitride.

8 . An apparatus for selective deposition on a first surface of a three-dimensional structure relative to one or more second surfaces of a three-dimensional structure, which comprises a trench, the apparatus comprising:
a reaction chamber defining a reaction space configured to accommodate the three-dimensional structure; a first reactant vessel configured to vaporize a polyimide to form a polyimide vapor; an inlet manifold; a gas line configured to fluidly connect the first reactant vessel to the reaction space via the inlet manifold, and selectively supply the polyimide vapor to the reaction space in which the three-dimensional structure is accommodated for deposition of a polyimide layer in the trench of the three-dimensional structure; a plasma source attached to the reaction space and configured for direct plasma generation within the reaction space for etch back of a region of the bottom of the trench to remove the polyimide layer from the region and expose the region; a gas source in selective fluid communication with the reaction space, via the inlet manifold, and the first reactant vessel, the gas source configured to provide gas for etch back of the region of the bottom of the trench by removing the polyimide layer to expose the region; a second reactant vessel in selective fluid communication with the inlet manifold and configured to hold a metal vapor and selectively supply the metal vapor to the reaction space for deposition of a metal layer in the exposed region of the bottom of the trench; a plurality of valves including a first valve disposed between the first reactant vessel and the inlet manifold, a second valve disposed between the gas source and the reaction space, and a third valve disposed between the second reactant vessel and the inlet manifold; a vacuum pump and an exhaust outlet; and a control system comprising at least one processor and a memory for storing a computer program that when executed by the processor is configured to:
control the opening and closing of the first valve to allow the polyimide vapor supplied by the first reactant vessel to enter the reaction space for deposition of the polyimide layer in the trench,
control, after deposition of the polyimide layer, the opening and closing of the second valve to allow the gas to enter the reaction space for etch back of the polyimide layer from the region,
control the opening and closing of the third valve to allow the metal vapor supplied by the second reactant vessel to enter the reaction space for deposition of the metal layer on the exposed region of the trench,
control the vacuum pump to maintain a desired pressure in the reaction space and exhaust excess polyimide vapor through the exhaust outlet,
control temperature of the reaction space to bake the polyimide layer remaining on surfaces of the trench other than the exposed region of the trench, and
control, after baking of the polyimide layer, the second valve to allow the gas to be supplied from the gas source to the reaction space to remove the polyimide layer remaining on the surfaces of the trench other than the exposed region of the trench, and
control, after baking of the polyimide layer, the plasma source to directly generate plasma to remove the polyimide layer remaining on the surfaces of the trench other than the exposed region of the trench.

9 . The apparatus according to claim 8 , wherein the plasma source is an in situ plasma generator for direct plasma generation within the reaction space.

Assignees

• Asm Ip Holding Bv

Inventors

• Maes Jan Willem
• Givens Michael Eugene
• Haukka Suvi
• Paruchuri Vamsi
• Raaijmakers Ivo Johannes
• Deng Shaoren
• Illiberi Andrea
• Tois Eva E
• Longrie Delphine
• Pore Viljami J

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0471

  comprising at least one ion or electron beam chamber · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P14/69391 Primary

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title