Tsv process window and fill performance enhancement by long pulsing and ramping

US2025263862A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2025263862-A1
Application numberUS-202519189931-A
CountryUS
Kind codeA1
Filing dateApr 25, 2025
Priority dateJan 10, 2020
Publication dateAug 21, 2025
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of electroplating metal into features of a partially fabricated electronic device on a substrate having high open area portions is provided. The method includes initiating a bulk electrofill phase with a pulse at a high level of current; reducing the current to a baseline current level; and optionally increasing the current in one or more steps until electroplating is complete.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method of electroplating metal, the method comprising: contacting a substrate with an electroplating solution having ions of a metal, wherein the substrate has features providing an open area of at least about 0.9% on a face of the substrate; applying an electrofill current waveform to the substrate contacting the electroplating solution, wherein the electrofill current waveform comprises (i) a pulse having a magnitude of at least about 2 times a magnitude of a baseline current for a duration of from about 10 to about 200 seconds, and (ii) a substantially constant current step having, on average, the magnitude of the baseline current, wherein the substantially constant current step follows the pulse; and filling at least a portion of the features with the metal.

Assignees

Inventors

Classifications

  • the interconnections being through-semiconductor vias · CPC title

  • comprising use of blind vias during the manufacture · CPC title

  • characterised by the filling method or the material of the conductive fill · CPC title

  • H10W20/043Primary

    for electroplating · CPC title

  • H10P14/47Primary

    Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

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Frequently asked questions

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What does patent US2025263862A1 cover?
A method of electroplating metal into features of a partially fabricated electronic device on a substrate having high open area portions is provided. The method includes initiating a bulk electrofill phase with a pulse at a high level of current; reducing the current to a baseline current level; and optionally increasing the current in one or more steps until electroplating is complete.
Who is the assignee on this patent?
Lam Res Corp
What technology area does this patent fall under?
Primary CPC classification H10W20/043. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 21 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).