Composition and Method for Fabrication of Nickel Interconnects

Patent metadata

Field	Value
Publication number	US-2025243596-A1
Application number	US-202519069333-A
Country	US
Kind code	A1
Filing date	Mar 4, 2025
Priority date	Jan 31, 2019
Publication date	Jul 31, 2025
Grant date	—

Abstract

A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.

First claim

1 . A nickel electrodeposition composition for filling vias and/or trenches with nickel or an alloy of nickel in microelectronic devices comprising:
a) a source of nickel ions; b) 100 to 500 ppm of one or more polarizing additives, wherein the one or more polarizing additives comprise substituted, multi-substituted, or unsubstituted heterocyclic betaines, or alkenols or combinations thereof; and c) 100 to 750 mg/L of one or more depolarizing additives, wherein the one or more depolarizing additives comprise sulfimides, sulfonates, sulfates, or combinations thereof; and d) 50 to 100 g/L of a stress modifier, wherein the stress modifier is selected from the group consisting of chlorides, bromides, sulfonates, salicylates, sulfosalicylates, and sulfonimides; and e) optionally, one or more alloying metals selected from the group consisting of cobalt, molybdenum, rhenium, and combinations thereof;
wherein the composition is free of boric acid; and
wherein the composition is configured to completely fill vias and/or trenches in microelectronic devices by bottom up filling of the vias and/or trenches.

2 . The composition of claim 1 , wherein the composition further comprises an acid selected from the group consisting of oxalic acid, citric acid, sulfamic acid, acetic acid, salicylic acid, sulfosalicylic acid, succinic acid, phthalic acid, tartaric acid, and salts of any of the foregoing.

3 . (canceled)

4 . (canceled)

5 . The composition of claim 1 , wherein the source of nickel ions is selected from the group consisting of nickel acetate, nickel carboxylate, nickel chloride, nickel bromide, nickel sulfate, nickel sulfamate, nickel fluoroborate, and nickel pyrophosphate.

6 . The composition of claim 1 , wherein the composition further comprises the one or more alloying metals.

7 . The composition of claim 1 , wherein the composition further comprises a surfactant, wherein the surfactant is an anionic, cationic, or non-ionic surfactant.

8 . (canceled)

9 . (canceled)

10 . The composition of claim 1 , wherein the ratio of the one or more polarizing additives to the one or more depolarizing additives is in the range of 100:1 to 1:100.

11 . The composition of claim 1 , wherein the composition further comprises a buffer, wherein the buffer comprises a salt of a weak organic or inorganic acid selected from the group consisting of phthalates, citrates, acetates, succinates, oxalates, tartrates, phosphates, borates, and combinations of one or more of the foregoing.

12 . (canceled)

13 . The composition of claim 1 , wherein the pH of the electrodeposition composition is within the range of 2 to 5.

14 . (canceled)

15 . (canceled)

16 . (canceled)

17 . (canceled)

18 . A nickel electrodeposition composition for filling vias and/or trenches with nickel or an alloy of nickel in microelectronic devices, the nickel electrodeposition composition comprising:
a) a source of nickel ions; b) at least one acid; c) one or more polarizing additives, wherein the one or more polarizing additives comprise substituted, multi-substituted, or unsubstituted heterocyclic betaines, or alkenols or combinations thereof; d) one or more depolarizing additives, wherein the one or more depolarizing additives comprise sulfimides, sulfonates, sulfates, or combinations thereof; e) at least one surfactant; f) at least one buffer; g) a stress modifier, wherein the stress modifier is selected from the group consisting of bromides, sulfonate, salicylates, sulfosalicylates, and sulfonimides; and h) optionally, one or more alloying metals selected from the group consisting of cobalt, molybdenum, rhenium, and combinations thereof,
wherein the nickel electrodeposition composition is free of boric acid, and
wherein the nickel electrodeposition composition is configured to completely fill vias and/or trenches in microelectronic devices by for bottom up filling of the vias and/or trenches.

19 . The nickel electrodeposition composition according to claim 18 , wherein a ratio of polarizing additives to depolarizing additives is in the range of 1:5 to 10:1.

20 . The nickel electrodeposition composition according to claim 21 , wherein the nickel electrodeposition composition further comprises the one or more alloying metals.

21 . A nickel electrodeposition composition for filling vias and/or trenches with nickel or an alloy of nickel in microelectronic devices, the nickel electrodeposition composition consisting essentially of:
a) a source of nickel ions; b) at least one acid; c) 100 to 500 ppm of one or more polarizing additives, wherein the one or more polarizing additives comprise substituted, multi-substituted, or unsubstituted heterocyclic betaines, or alkenols or combinations thereof; d) 150 mg/L to 750 mg/L of one or more depolarizing additives, wherein the one or more depolarizing additives comprise sulfimides, sulfonates, sulfates, or combinations thereof; e) one or more of at least one surfactant, at least one buffer, and at least one stress modifier; f) balance water,
wherein the nickel electrodeposition composition is configured for bottom up filling of recessed features in microelectronic devices; and
wherein the nickel electrodeposition composition is at least substantially free of boric acid.

22 . The nickel electrodeposition composition according to claim 21 , wherein a ratio of polarizing additives to depolarizing additives is in the range of 1:5 to 10:1.

23 . The nickel electrodeposition composition according to claim 21 , wherein the at least one acid is selected from the group consisting of oxalic acid, citric acid, sulfamic acid, salicylic acid, sulfosalicylic acid, succinic acid, phthalic acid, tartaric acid, and salts of any of the foregoing.

24 . The nickel electrodeposition composition according to claim 21 , wherein the at least one stress modifier is present and is selected from the group consisting of chlorides, bromides, sulfonates, salicylates, sulfosalicylates, and sulfonimides.

25 . The nickel electrodeposition composition according to claim 21 , wherein the at least one buffer is present and comprises a salt of a weak organic or inorganic acid selected from the group consisting of phthalates, citrates, acetates, succinates, oxalates, tartrates, phosphates, borates, and combinations of one or more of the foregoing.

Assignees

• Macdermid Enthone Inc

Inventors

• Yakobson Eric
• Sun Shaopeng
• Najjar Elie
• Richardson Thomas
• Paneccasio Vincent
• Shao Wenbo
• Whitten Kyle

Classifications

• H10P14/47 Primary

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• C25D21/10

  Agitating of electrolytes; Moving of racks · CPC title