Oxide semiconductor film, thin film transistor, sputtering target, and oxide sintered body

Patent metadata

Field	Value
Publication number	US-2025220976-A1
Application number	US-202318848704-A
Country	US
Kind code	A1
Filing date	Mar 23, 2023
Priority date	Apr 15, 2022
Publication date	Jul 3, 2025
Grant date	—

Abstract

It is an object of the present invention to provide an oxide semiconductor film which enables improving both the carrier mobility and the stability with respect to environmental temperature of a thin film transistor. The oxide semiconductor film according to the one embodiment of the present invention contains, as metal elements: In and Zn; and an element X, being either of La and Nd, wherein contents of the In, the Zn, and the element X in total metal elements are: In: greater than or equal to 30 atm % and less than or equal to 90 atm %; Zn: greater than or equal to 9 atm % and less than or equal to 70 atm %; and X: greater than or equal to 0.0001 atm % and less than or equal to 2 atm %.

First claim

1 . An oxide semiconductor film for use in a thin film transistor, the oxide semiconductor film comprising, as metal elements:
In and Zn; and an element X, being either of La and Nd, wherein contents of the In, the Zn, and the element X in total metal elements are:
In: greater than or equal to 30 atm % and less than or equal to 90 atm %;
Zn: greater than or equal to 9 atm % and less than or equal to 70 atm %; and
X: greater than or equal to 0.0001 atm % and less than or equal to 2 atm %.

2 . The oxide semiconductor film according to claim 1 , wherein the contents of the In and the Zn are:
In: greater than or equal to 55 atm % and less than or equal to 80 atm %; and Zn: greater than or equal to 20 atm % and less than or equal to 50 atm %.

3 . The oxide semiconductor film according to claim 1 , further comprising, as a metal element, an element Y being either of Sn and Ge, wherein
a content of the element Y in the total metal elements is: Y: greater than or equal to 0.0001 atm % and less than or equal to 4 atm %.

4 . The oxide semiconductor film according to claim 3 , wherein the content of the element Y in the total metal elements is:
Y: greater than 1 atm % and less than or equal to 2 atm %.

5 . A thin film transistor comprising the oxide semiconductor film according to claim 1 .

6 . A thin film transistor comprising the oxide semiconductor film according to claim 2 .

7 . A thin film transistor comprising the oxide semiconductor film according to claim 3 .

8 . A thin film transistor comprising the oxide semiconductor film according to claim 4 .

9 . A sputtering target for forming an oxide semiconductor film for use in a thin film transistor, the sputtering target comprising, as metal elements:
In and Zn; and an element X, being either of La and Nd, wherein contents of the In, the Zn, and the element X in total metal elements are:
In: greater than or equal to 30 atm % and less than or equal to 90 atm %;
Zn: greater than or equal to 9 atm % and less than or equal to 70 atm %; and
X: greater than or equal to 0.0001 atm % and less than or equal to 2 atm %.

10 . A sputtering target for forming an oxide semiconductor film for use in a thin film transistor, the sputtering target comprising, as metal elements:
In and Zn; and an element X, being either of La and Nd, wherein contents of the In and the Zn in total metal elements are:
In: greater than or equal to 30 atm % and less than or equal to 90 atm %; and
Zn: greater than or equal to 9 atm % and less than or equal to 70 atm %,
the sputtering target comprises an In oxide crystal phase, a ZnIn oxide crystal phase, and an XIn oxide crystal phase, and a constitution of the ZnIn oxide crystal phase is Zn 3 In 2 O 6 and/or Zn 4 In 2 O 7 .

11 . An oxide sintered body for forming an oxide semiconductor film for use in a thin film transistor, the oxide sintered body comprising, as metal elements:
In and Zn; and an element X, being either of La and Nd, wherein contents of the In and the Zn in total metal elements are:
In: greater than or equal to 30 atm % and less than or equal to 90 atm %; and
Zn: greater than or equal to 9 atm % and less than or equal to 70 atm %,
the oxide sintered body comprises an In oxide crystal phase, a ZnIn oxide crystal phase, and an XIn oxide crystal phase, and a constitution of the ZnIn oxide crystal phase is Zn 3 In 2 O 6 and/or Zn 4 In 2 O 7 .

Assignees

• Kobe Steel Ltd
• Kobelco Res Institute Inc

Inventors

• Ochi Mototaka
• Teramae Yumi
• Nishiyama Kohei
• Miyata Koichi

Classifications

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/29

  characterised by the substrates · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title