Surface treatment composition and method for producing wafer

Patent metadata

Field	Value
Publication number	US-2025210375-A1
Application number	US-202318845594-A
Country	US
Kind code	A1
Filing date	Apr 5, 2023
Priority date	Apr 11, 2022
Publication date	Jun 26, 2025
Grant date	—

Abstract

The present invention is a surface treatment composition which is supplied as vapor to the surface of a wafer having an uneven pattern on the surface and is used for forming a water-repellent protective film on the surface, the surface treatment composition including a silylating agent and a solvent, in which the silylating agent includes a silicon compound represented by (R1)3Si-X (R1's are each independently a group selected from the group consisting of a hydrocarbon group having 1 to 10 carbon atoms and a hydrocarbon group having 1 to 10 carbon atoms in which some or all hydrogen atoms are substituted with fluorine atoms, and X is an amino group), and in which the solvent includes 75% by mass or more of a hydrocarbon solvent in 100% by mass of the total amount of the solvent.

First claim

1 . A surface treatment composition which is supplied as vapor to a surface of a wafer having an uneven pattern on the surface and is used for forming a water-repellent protective film on the surface, the surface treatment composition comprising:
a silylating agent; and a solvent, wherein the silylating agent includes a silicon compound represented by Formula (1),
(R 1 ) 3 Si-X   (1)

(R 1 's are each independently a group selected from the group consisting of a hydrocarbon group having 1 to 10 carbon atoms and a hydrocarbon group having 1 to 10 carbon atoms in which some or all hydrogen atoms are substituted with fluorine atoms, and X is an amino group), and wherein the solvent includes 75% by mass or more of a hydrocarbon solvent in 100% by mass of a total amount of the solvent.

2 . The surface treatment composition according to claim 1 ,
wherein a content of the hydrocarbon solvent is 97% by mass or more in 100% by mass of the total amount of the solvent.

3 . The surface treatment composition according to claim 1 ,
wherein the hydrocarbon solvent includes an aromatic hydrocarbon.

4 . The surface treatment composition according to claim 1 ,
wherein a content of the silylating agent in 100% by mass of the surface treatment composition is 0.3% by mass or more and 30% by mass or less.

5 . The surface treatment composition according to claim 1 ,
wherein a boiling point difference between a boiling point of the solvent and a boiling point of the silylating agent (boiling point of the solvent−boiling point of the silylating agent) at 1 atm is 20° C. or more.

6 . The surface treatment composition according to claim 1 ,
wherein the silicon compound includes one or two or more selected from the group consisting of trimethylsilyldimethylamine, trimethylsilyldiethylamine, N-(trimethylsilyl)-tert-butylamine, hexamethyldisilazane, and compounds in which at least one trimethylsilyl group of these trimethylsilylamines is substituted with any of an ethyldimethylsilyl group, a propyldimethylsilyl group, a butyldimethylsilyl group, a hexyldimethylsilyl group, an octyldimethylsilyl group, and a decyldimethylsilyl group.

7 . The surface treatment composition according to claim 1 ,
wherein a water contact angle on a surface of a silicon wafer after surface treatment is greater than 80°, as measured by a procedure as below, (procedure) a smooth silicon wafer having a thermal oxide film layer on a surface is immersed in a 1% by mass hydrofluoric acid aqueous solution at 25° C. for 10 minutes and immersed and cleaned in pure water at 25° C. for 1 minute and 2-propanol (iPA) at 25° C. for 1 minute, after cleaning, the silicon wafer is arranged horizontally in a state of being filled to the brim with iPA and the vapor of the surface treatment composition is supplied to the silicon wafer, subsequently, on the surface of the silicon wafer, the vapor is changed into a liquid state and the iPA held on the surface is replaced with the liquid, subsequently, the silicon wafer is immersed in iPA at 25° C. for 1 minute, thereafter, air is blown onto the silicon wafer to remove the iPA on the surface, and with respect to the silicon wafer surface obtained through the above steps, the water contact angle described above is measured in accordance with “Wettability test method for substrate glass surface” of JIS R 3257:1999 using 2 μl of pure water.

8 . The surface treatment composition according to claim 1 ,
wherein the surface treatment composition does not include a non-cyclic carbonate ester or includes 2% by mass or less of a non-cyclic carbonate ester in 100% by mass of the surface treatment composition.

9 . The surface treatment composition according to claim 1 ,
wherein the surface treatment composition does not include a catalyst or includes a catalyst in a content of 2% by mass or less in 100% by mass of the surface treatment composition.

10 - 11 . (canceled)

12 . A method for producing a wafer comprising:
a step of preparing a wafer having an uneven pattern on a surface; a step of supplying a cleaning liquid to the surface of the wafer to carry out cleaning; and a step of supplying vapor of a surface treatment composition to the surface holding the cleaning liquid, changing the state of the vapor to a liquid on the surface, replacing the cleaning liquid with the liquid, and forming a water-repellent protective film on at least a part of the surface, wherein the surface treatment composition includes a silylating agent, and a solvent, wherein the silylating agent includes a silicon compound represented by Formula (1),
(R 1 ) 3 Si-X   (1)

(R 1 's are each independently a group selected from the group consisting of a hydrocarbon group having 1 to 10 carbon atoms and a hydrocarbon group having 1 to 10 carbon atoms in which some or all hydrogen atoms are substituted with fluorine atoms, and X is an amino group), and wherein the solvent includes 75% by mass or more of a hydrocarbon solvent in 100% by mass of a total amount of the solvent.

13 . The method for producing a wafer according to claim 12 ,
wherein a content of the hydrocarbon solvent is 97% by mass or more in 100% by mass of the total amount of the solvent.

14 . The method for producing a wafer according to claim 12 ,
wherein, in the surface treatment composition, the hydrocarbon solvent includes an aromatic hydrocarbon.

15 . The method for producing a wafer according to claim 12 ,
wherein, in the surface treatment composition, a content of the silylating agent is 0.3% by mass or more and 30% by mass or less in 100% by mass of the surface treatment composition.

16 . The method for producing a wafer according to claim 12 ,
wherein, in the surface treatment composition, a boiling point difference between a boiling point of the solvent and a boiling point of the silylating agent (boiling point of the solvent−boiling point of the silylating agent) at 1 atm is 20° C. or more.

17 . The method for producing a wafer according to claim 12 ,
wherein, in the surface treatment composition, the silicon compound includes one or two or more selected from the group consisting of trimethylsilyldimethylamine, trimethylsilyldiethylamine, N-(trimethylsilyl)-tert-butylamine, hexamethyldisilazane, and compounds in which at least one trimethylsilyl group of these trimethylsilylamines is substituted with any of an ethyldimethylsilyl group, a propyldimethylsilyl group, a butyldimethylsilyl group, a hexyldimethylsilyl group, an octyldimethylsilyl group, and a decyldimethylsilyl group.

18 . The method for producing a wafer according to claim 12 ,
wherein the surface treatment composition does not include a non-cyclic carbonate ester or includes 2% by mass or less of a non-cyclic carbonate ester in 100% by mass of the surface treatment composition.

19 . The method for producing a wafer according to claim 12 ,
wherein the surface treatment composition does not include a catalyst or includes a catalyst in a content of 2% by mass or less in 100% by mass of the surface treatment composition.

20 . (canceled)

21 . The method for producing a wafer according to claim 12 ,
wherein, in the surface treatment composition, a total content of Na, Mg, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn, and Ag measured using inductively coupled plasma mass spectrometry is 100 mass ppb or less in the surface treatment composition.

22 . The method for producing a wafer according to claim 12 ,
wherein the vapor of the surface treatment

Assignees

• Central Glass Co Ltd

Inventors

• Okumura Yuzo
• Terui Yoshiharu
• Yoshida Ayaka

Classifications

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H10W74/01 Primary

  Manufacture or treatment · CPC title

• H10P70/50

  characterised by the part to be cleaned · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title