Silica particles, production method therefor, silica sol, polishing composition, polishing method, method for producing semiconductor wafer, and method for producing semiconductor device

Patent metadata

Field	Value
Publication number	US-2025197229-A1
Application number	US-202418990961-A
Country	US
Kind code	A1
Filing date	Dec 20, 2024
Priority date	Jun 20, 2022
Publication date	Jun 19, 2025
Grant date	—

Abstract

Silica particles have an average pore volume of nanoscale pores of 5.3 nm3 or less as measured by positron annihilation spectroscopy. The silica particles may have an average pore volume of atomic-scale pores of 0.33 nm3 or more as measured by positron annihilation spectroscopy. The silica particles may have a volume of pores having a diameter of 2 nm or less of 0.0070 cm3/g or less as measured by a nitrogen gas adsorption method.

First claim

1 . Silica particles wherein an average pore volume of nanoscale pores as measured by positron annihilation spectroscopy is 5.3 nm 3 or less.

2 . The silica particles according to claim 1 , wherein the average pore volume of nanoscale pores as measured by positron annihilation spectroscopy is 4.0 nm 3 or less.

3 . The silica particles according to claim 1 , wherein the average pore volume of nanoscale pores as measured by positron annihilation spectroscopy is 1.5 nm 3 or more.

4 . The silica particles according to claim 1 , wherein an average pore volume of atomic-scale pores as measured by positron annihilation spectroscopy is 0.33 nm 3 or more.

5 . The silica particles according to claim 1 , wherein the average pore volume of atomic-scale pores as measured by positron annihilation spectroscopy is 0.80 nm 3 or less.

6 . The silica particles according to claim 1 , wherein a volume of pores having a diameter of 2 nm or less as measured by a nitrogen gas adsorption method is 0.0070 cm 3 /g or less.

7 . The silica particles according to claim 1 , wherein a refractive index is 1.390 or more.

8 . The silica particles according to claim 1 , wherein a metal impurity content is 5 ppm or less.

9 . The silica particles according to claim 1 , wherein the silica particles comprise a tetraalkoxysilane condensate as a main component.

10 . A method for producing the silica particles described in claim 1 , the method comprising carrying out a hydrolysis reaction and a condensation reaction of an alkoxysilane at 40° C. or higher.

11 . A silica sol comprising the silica particles described in claim 1 .

12 . A polishing composition comprising the silica sol described in claim 11 .

13 . A polishing method comprising polishing by using the polishing composition described in claim 12 .

14 . A method for producing a semiconductor wafer, the method comprising polishing by using the polishing composition described in claim 12 .

15 . A method for producing a semiconductor device, the method comprising polishing by using the polishing composition described in claim 12 .

Assignees

• Mitsubishi Chem Corp

Inventors

• Shimada Yuta

Classifications

• H10P90/129

  by polishing · CPC title

• C01P2006/60

  Optical properties, e.g. expressed in CIELAB-values · CPC title

• C01P2006/80

  Compositional purity · CPC title

• C01P2004/64

  Nanometer sized, i.e. from 1-100 nanometer · CPC title

• C01P2006/16

  Pore diameter · CPC title