Selective Dielectric Capping for Hybrid Bonding

Patent metadata

Field	Value
Publication number	US-2025149474-A1
Application number	US-202418809472-A
Country	US
Kind code	A1
Filing date	Aug 20, 2024
Priority date	Nov 3, 2023
Publication date	May 8, 2025
Grant date	—

Abstract

A method for increasing dielectric bonding strength during wafer-level processing is incorporated into a hybrid bonding process. A method may include immersing a substrate into a chemical bath at atmospheric conditions where the chemical bath forms a self-assembled monolayer on metal surfaces of the substrate and selectively depositing a high-k dielectric material to form a dielectric cap on dielectric surfaces of the substrate absent of the self-assembled monolayer.

First claim

1 . A method for increasing dielectric bonding strength during wafer-level processing, comprising:
immersing a substrate into a chemical bath, wherein the chemical bath forms a self-assembled monolayer on at least one metal surface of the substrate; and selectively depositing a dielectric material to form a dielectric cap on at least one dielectric surface of the substrate absent of the self-assembled monolayer.

2 . The method of claim 1 , wherein immersing the substrate into the chemical bath occurs at atmospheric pressure and ambient temperature.

3 . The method of claim 1 , further comprising:
removing the self-assembled monolayer from the substrate; bonding the dielectric material of the substrate to another substrate with surfaces covered by the dielectric material by contacting substrates together; and annealing substrates to bond metal surfaces together.

4 . The method of claim 3 , further comprising:
removing the self-assembled monolayer using a plasma-based process for approximately 10 seconds to approximately 60 seconds.

5 . The method of claim 3 , wherein the substrate is a die.

6 . The method of claim 3 , wherein annealing occurs at a temperature of approximately 150 degrees Celsius.

7 . The method of claim 1 , wherein the chemical bath includes an alkanethiol.

8 . The method of claim 7 , wherein the alkanethiol has a linear structure or a benzene ring structure.

9 . The method of claim 1 , wherein the dielectric material is a high-k dielectric material.

10 . The method of claim 9 , wherein the high-k dielectric material is aluminum oxide or hafnium oxide.

11 . The method of claim 1 , wherein the substrate is immersed in the chemical bath for approximately 10 minutes to approximately 30 minutes.

12 . The method of claim 1 , wherein the metal surface is copper, silver, gold, palladium, platinum, cobalt, titanium, nickel, or combinations thereof.

13 . The method of claim 1 , wherein a thickness of the dielectric material is greater than zero nm to approximately 10 nm.

14 . A method for increasing dielectric bonding strength during wafer-level processing, comprising:
immersing a substrate into a chemical bath, wherein the chemical bath forms a self-assembled monolayer on at least one metal surface of the substrate and wherein immersing the substrate into the chemical bath occurs at atmospheric pressure and ambient temperature; and selectively depositing a high-k dielectric material to form a dielectric cap on at least one dielectric surface of the substrate absent of the self-assembled monolayer, wherein a thickness of the high-k dielectric material is greater than zero nm to approximately 10 nm.

15 . The method of claim 14 , wherein the substrate is immersed in the chemical bath for approximately 10 minutes to approximately 30 minutes.

16 . The method of claim 14 , further comprising:
removing the self-assembled monolayer from the substrate; bonding the high-k dielectric material of the substrate to another substrate with surfaces covered by the high-k dielectric material by contacting substrates together; and annealing substrates to bond metal surfaces together.

17 . The method of claim 16 , further comprising:
removing the self-assembled monolayer using a plasma-based process for approximately 10 seconds to approximately 60 seconds.

18 . The method of claim 14 , wherein the chemical bath includes an alkanethiol with a linear structure or a benzene ring structure.

19 . The method of claim 14 , wherein the high-k dielectric material is aluminum oxide or hafnium oxide.

20 . A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for increasing dielectric bonding strength during wafer-level processing to be performed, the method comprising:
immersing a substrate into a chemical bath, wherein the chemical bath forms a self-assembled monolayer on at least one metal surface of the substrate and wherein immersing the substrate into the chemical bath occurs at atmospheric pressure and ambient temperature; and selectively depositing a dielectric material to form a dielectric cap on at least one dielectric surface of the substrate absent of the self-assembled monolayer.

Assignees

• Applied Materials Inc
• Univ Nanyang Tech

Inventors

• Lianto Prayudi
• Tan Chuan Seng

Classifications

• H10W72/953

  not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/921

  Structures or relative sizes of bond pads · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/01961

  Chemical or physical modification, e.g. by sintering or anodisation (patterning H10W72/01951) · CPC title