Atomic layer etching of mgo-doped lithium niobate using sequential exposures of h2 and sf6/argon plasmas

Patent metadata

Field	Value
Publication number	US-2025120318-A1
Application number	US-202418908317-A
Country	US
Kind code	A1
Filing date	Oct 7, 2024
Priority date	Oct 6, 2023
Publication date	Apr 10, 2025
Grant date	—

Abstract

Lithium niobate (LiNbO 3 , LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by propagation losses arising from surface roughness on the nano- and microscale. Atomic layer etching (ALE) can smooth these features and thereby increase photonic performance. In one embodiment disclosed herein, an isotropic ALE process for x-cut MgO-doped LN uses sequential exposures of H 2 and SF 6 /Ar plasmas. We observed an etch rate of 1.59±0.02 nm/cycle with a synergy of 96.9%. ALE can be achieved with SF 6 /O 2 or Cl 2 /BCl 3 plasma exposures in place of the SF 6 /Ar plasma step with synergies of 99.5% and 91.5% respectively. The process decreased the sidewall surface roughness of TFLN waveguides etched by physical Ar + milling by 30% without additional wet processing.

First claim

What is claimed is:

1 . A method of etching lithium niobate, comprising:
etching a substrate comprising lithium niobate using atomic layer etching.

2 . The method of claim 1 , wherein the etching comprises patterning a photonic integrated circuit or one or more device structures in the lithium niobate and/or smoothing the surface of one or more device structures that have been patterned by another process.

3 . The method of claim 1 , wherein the etching comprises:
(a) exposing the lithium niobate to a hydrogen plasma comprising protons accelerated by a bias in an ALE reactor, to form a modified layer on the lithium niobate substrate; (b) purging the reactor using an inert gas; (c) removing the modified layer using a removal agent; and (d) purging the reactor using an inert gas.

4 . The method of claim 3 , wherein the removing comprises sputtering using chemical species or using ions accelerated by a bias under conditions that remove the modified layer over the bulk lithium niobate in a self-limiting process.

5 . The method of claim 3 , wherein the removing comprises exposing the modified layer to the removal agent comprising chlorine or fluorine as a neutral species or in a plasma as an ionic species accelerated by a bias.

6 . The method of claim 3 , wherein the inert gas comprises argon.

7 . The method of claim 3 , further comprising performing multiple cycles of step (a) and (b) prior to performing step (c).

8 . The method of claim 3 , further comprising performing multiple cycles of step (a) and (c).

9 . The method of claim 1 , wherein an etched surface of the lithium niobate is etched with nanometer resolution (or with a surface roughness less than 3.5 nm, less than 2 nm, less than 1.5 nm, or less than 1 nm, and/or the etched surface is smoother than the non etched regions).

10 . The method of claim 1 , further comprising one or more cycles of:
(a) exposure of the substrate to a dose of the hydrogen plasma for a duration and under a bias and temperature and pressure such that the hydrogen adsorbs on a surface of the substrate in a self limiting process as characterized by the hydrogen saturating all available reactive bonding sites with the lithium niobate to form a modified layer; and (b) exposure of the modified layer to a dose of the chemical species comprising a halogen at a temperature, pressure and energy such that the chemical species selectively removes the modified layer over the underlying bulk lithium niobate in a self-limiting process; and such that removal of one or more atomic layers of the lithium niobate after each cycle can be controlled with precision of a single one of the atomic layers.

11 . The method of claim 2 , wherein the photonic integrated circuit or device structure includes at least one of a waveguide or resonator.

12 . The method of claim 1 , wherein the ALE is performed on an x-cut surface of the lithium niobate.

13 . The method of claim 3 , further comprising controlling an angle of incidence or angular distribution of the removal agent on the substrate by controlling at least one of the temperature or pressure or bias, so as to control anisotropy and/or inclination of the etched surface and crystal quality of the etched lithium niobate.

14 . The method of claim 3 , wherein the removing comprises a selective process that removes redeposited species without etching the lithium niobate in the substrate.

15 . The method of claim 14 , wherein the removing comprises thermal cycling or wet etching using a liquid removal agent.

16 . The method of claim 3 , further comprising selecting an angle of incidence or angular distribution of the reactant/and or removal agent on the substrate to etch and/or smoothen sidewalls of a waveguide or structure comprising the lithium niobate.

17 . The method of claim 3 , wherein the removal agent comprises SF6/argon.

18 . A device comprising:
a structure patterned into a lithium niobate substrate using atomic layer etching, or a structure comprising lithium niobate having a surface smoothened using atomic layer etching.

19 . The device of claim 18 wherein the surface of the lithium niobate comprises at least one of hydrogen, an amorphized or amorphous layer, or a surface roughness less than 3.5 nm or less than 1.5 nm.

20 . An atomic layer etching apparatus:
a source of a reactant for reacting with a surface of a substrate so as to form a modified layer on the substrate, wherein the reactant is generated by a plasma, and the substrate comprises lithium niobate; a source of a treatment for removing the modified layer; and a computer comprising a non-transitory computer readable medium storing a plurality of instructions, the plurality of instructions comprising: outputting the reactant in the reactor tool, outputting the treatment to remove the modified layer so as to etch and/or smooth features in the lithium niobate.

Assignees

• California Inst Of Techn

Inventors

• Greer Harold Frank
• Solgaard Jenni
• Chen Ivy
• Minnich Austin
• Marandi Alireza
• Sekine Ryoto

Classifications

• H10P72/0421 Primary

  for drying etching · CPC title

• H10N30/082 Primary

  by etching, e.g. lithography · CPC title

• H01L21/67069

  Electricity · mapped topic