Junction temperature estimation device and plasma generating system including the same

Patent metadata

Field	Value
Publication number	US-2025106975-A1
Application number	US-202418738968-A
Country	US
Kind code	A1
Filing date	Jun 10, 2024
Priority date	Sep 25, 2023
Publication date	Mar 27, 2025
Grant date	—

Abstract

Provided is a plasma generating system including: a resonant inverter including a switching circuit and configured to generate a device output current and a device output voltage, and to have a switching frequency based on an input DC current and an input DC voltage; a plasma source configured to generate a plasma based on the device output current and the device output voltage; a controller configured to control the switching frequency of the resonant inverter based on a value of the input DC current, a value of the input DC voltage, a value of the device output current, and a value of the device output voltage; and a junction temperature estimator configured to: estimate a current output from the switching circuit based on the value of the input DC voltage, the value of the device output current, and the value of the device output voltage, generate an inverted current estimate value, and estimate a junction temperature of the switching circuit based on the inverted current estimate value.

First claim

What is claimed is:

1 . A plasma generating system comprising:
a resonant inverter comprising a switching circuit and configured to generate a device output current and a device output voltage, and to have a switching frequency based on an input DC current and an input DC voltage; a plasma source configured to generate a plasma based on the device output current and the device output voltage; a controller configured to control the switching frequency of the resonant inverter based on a value of the input DC current, a value of the input DC voltage, a value of the device output current, and a value of the device output voltage; and a junction temperature estimator configured to:
estimate a current output from the switching circuit based on the value of the input DC voltage, the value of the device output current, and the value of the device output voltage,
generate an inverted current estimate value, and
estimate a junction temperature of the switching circuit based on the inverted current estimate value.

2 . The plasma generating system of claim 1 , further comprising a power supply configured to generate the input DC current and the input DC voltage,
wherein the resonant inverter is further configured to:
convert the input DC voltage and the input DC current into an alternating current and an alternating current voltage, and
output the device output current and the device output voltage, and wherein the plasma source comprises a ferromagnetic core inductive plasma source.

3 . The plasma generating system of claim 2 ,
wherein the switching circuit is configured to:
convert the input DC current into the alternating current,
output an inverted alternating current,
convert the input DC voltage into the alternating current voltage, and
output an inverted alternating current voltage,
wherein the resonant inverter further comprises a resonance circuit configured to:
amplify the inverted alternating current and the inverted alternating current voltage, and
output the device output current and the device output voltage, and
wherein the switching circuit comprises a single-phase full bridge structure.

4 . The plasma generating system of claim 1 , wherein the junction temperature estimator comprises:
an impedance calculating unit configured to obtain an output impedance based on the device output current and the device output voltage; an inverted current estimating unit configured to output the inverted current estimate value based on the output impedance and the switching frequency of the device output current; a loss calculating unit configured to obtain a loss estimate value based on the inverted current estimate value; and a thermal model configured to obtain the junction temperature based on the loss estimate value.

5 . The plasma generating system of claim 4 , wherein the impedance calculating unit is further configured to obtain the output impedance based on a ratio of the device output voltage to the device output current and a phase difference between the device output voltage and the device output current.

6 . The plasma generating system of claim 4 , wherein the inverted current estimating unit is further configured to output the inverted current estimate value using a lookup table based on the output impedance and the switching frequency.

7 . The plasma generating system of claim 6 , wherein a unit inverted current estimate value is assigned from the lookup table based on a resistance component of the output impedance and the switching frequency.

8 . The plasma generating system of claim 4 , wherein the loss calculating unit comprises:
a conduction loss calculating unit configured to obtain a conduction loss value based on the inverted current estimate value and the switching frequency; a switching calculating unit configured to obtain a switching loss value based on the inverted current estimate value; and a loss summing unit configured to add the conduction loss value and the switching loss value to output the loss estimate value.

9 . The plasma generating system of claim 4 , wherein the thermal model is further configured to estimate the junction temperature based on a thermal circuit model using the loss estimate value as an input current and a case temperature of a power supply device which includes the resonant inverter as an input power.

10 . The plasma generating system of claim 9 , wherein the thermal model comprises a series thermal model in which a plurality of thermal resistors are connected in series.

11 . A junction temperature estimation device configured to estimate a junction temperature of a power supply device including a resonant inverter, the junction temperature estimation device comprising:
at least one processor; at least one memory storing at least one instruction, which when executed by the at least one processor, causes the junction temperature estimation device to: generate an inverted current estimate value by estimating a current output by a switching circuit of the resonant inverter based on a value of a device output current generated by the resonant inverter and a value of a device output voltage generated by the resonant inverter, and estimate the junction temperature of the switching circuit based on the inverted current estimate value.

12 . The junction temperature estimation device of claim 11 , wherein the at least one instruction, when executed by the at least one processor, further causes the junction temperature estimation device to:
obtain an output impedance based on the device output current and the device output voltage, output the inverted current estimate value based on the output impedance and a switching frequency of the device output current, obtain a loss estimate value based on the inverted current estimate value, and obtain the junction temperature based on the loss estimate value.

13 . The junction temperature estimation device of claim 12 , wherein the at least one instruction, when executed by the at least one processor, further causes the junction temperature estimation device to:
obtain the output impedance based on a ratio of the device output voltage to the device output current and a phase difference between the device output voltage and the device output current.

14 . The junction temperature estimation device of claim 12 , wherein the at least one instruction, when executed by the at least one processor, further causes the junction temperature estimation device to:
output the inverted current estimate value using a lookup table based on the output impedance and the switching frequency.

15 . The junction temperature estimation device of claim 12 , wherein the at least one instruction, when executed by the at least one processor, further causes the junction temperature
obtain a conduction loss value based on the inverted current estimate value and the switching frequency, obtain a switching loss value based on the inverted current estimate value, and add the conduction loss value and the switching loss value to obtain the loss estimate value.

16 . The junction temperature estimation device of claim 12 , wherein the at least one instruction, when executed by the at least one processor, further causes the junction temperature estimation device to:
estimate the junction temperature based on a thermal circuit model using the loss estimate value as an input current and a case temperature of the power supply device as an input power.

17 . A plasma generating system comprising:
a plasma generating device comprising a plasma

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Donghoon
• Jung Kwangyoung
• Kim Seunghun
• Bok Jung-Soon
• Uh Jiho
• Ohn Hyunjoon
• Yoon Wonhee

Classifications

• G01K2217/00

  Temperature measurement using electric or magnetic components already present in the system to be measured · CPC title

• G01K7/427 Primary

  Temperature calculation based on spatial modeling, e.g. spatial inter- or extrapolation · CPC title

• H02M7/4815

  Resonant converters (H02M7/4811 and H02M7/4826 take precedence) · CPC title

• H02M1/327

  against abnormal temperatures · CPC title

• H02M1/0009

  Devices or circuits for detecting current in a converter · CPC title