Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances

Patent metadata

Field	Value
Publication number	US-2025079292-A1
Application number	US-202418951182-A
Country	US
Kind code	A1
Filing date	Nov 18, 2024
Priority date	Dec 30, 2016
Publication date	Mar 6, 2025
Grant date	—

Abstract

Embodiments of the invention include a microelectronic device that includes a substrate, at least one dielectric layer on the substrate and a plurality of conductive lines within the at least one dielectric layer. The microelectronic device also includes an air gap structure that is located below two or more of the plurality of conductive lines.

First claim

1 - 14 . (canceled)

15 . An interconnect structure in a semiconductor device, comprising:
at least one dielectric layer and a conductive layer having a plurality of conductive lines within the at least one dielectric layer; and at least one air gap structure that is integrated with the interconnect structure, the at least one air gap structure is positioned between adjacent conductive lines of the plurality of conductive lines, wherein the at least one air gap structure comprises a group III Nitride layer formed on a region of the at least one air gap structure.

16 . A computing device, comprising:
a board; a component coupled to the board, the component including the interconnect structure of claim 15 ; and a memory coupled to the board.

17 . A computing device, comprising:
a board; a component coupled to the board, the component including the interconnect structure of claim 15 ; and a communication chip coupled to the board.

18 . A computing device, comprising:
a board; a component coupled to the board, the component including the interconnect structure of claim 15 ; and a camera coupled to the board.

19 . A packaged integrated circuit die comprising the interconnect structure of claim 15 .

20 . A component comprising the interconnect structure of claim 15 , wherein the component is selected from a group consisting of a processor, a communications chip, and a digital signal processor.

Assignees

• Tahoe Res Ltd

Inventors

• Then Han Wui
• Dasgupta Sansaptak
• Radosavljevic Marko
• Gardner Sanaz K

Classifications

• H10W20/072

  of dielectric parts comprising air gaps · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title

• H10W20/46

  comprising air gaps · CPC title

• H10W10/021 Primary

  of air gaps · CPC title

• H10W10/20

  Air gaps · CPC title