Thin film manufacturing method and thin film

Patent metadata

Field	Value
Publication number	US-2025069886-A1
Application number	US-202318726391-A
Country	US
Kind code	A1
Filing date	Jan 25, 2023
Priority date	Jan 27, 2022
Publication date	Feb 27, 2025
Grant date	—

Abstract

The present inventive concept relates to a thin film manufacturing method and a thin film. The thin film manufacturing method comprises: an adsorption step of adsorbing a high-k material on a substrate by spraying a source gas consisting of a high-k material; a deposition step of depositing a thin film consisting of the high-k material on the substrate by spraying a reaction gas that reacts with the source gas; and a crystallization step of crystallizing the high-k material using plasma.

First claim

1 . A method of manufacturing a thin film, the method comprising:
an adsorption step of injecting a source gas including a high-k dielectric material to adsorb the high-k dielectric material onto a substrate; a deposition step of injecting a reactant gas reacting on the source gas to deposit a thin film including the high-k dielectric material on the substrate; and a crystallization step of crystallizing the high-k dielectric material by using plasma.

2 . The method of claim 1 , wherein the crystallization step is performed after the deposition step is performed.

3 . The method of claim 1 , wherein the crystallization step and the deposition step are performed together.

4 . The method of claim 1 , wherein the crystallization step comprises:
a first crystallization step performed along with the deposition step; and a second crystallization step performed after the deposition step and the first crystallization step are performed.

5 . The method of claim 1 , wherein the adsorption step injects a mixed gas, including at least one of hafnium (Hf) and zirconium (Zr), onto the substrate.

6 . The method of claim 1 , wherein the crystallization step generates plasma by using a plasma gas including at least one of helium (He), argon (Ar), and ammonia (NH3).

7 . The method of claim 6 , wherein the deposition step injects ozone (O3) as a reactant gas onto the substrate.

8 . The method of claim 1 , comprising:
a first purge step of injecting a purge gas onto the substrate after the adsorption step is performed; and a second purge step of injecting the purge gas onto the substrate after the deposition step is performed.

9 . A thin film comprising:
a thin film layer formed on a substrate by using a mixed material including a high-k dielectric material, wherein the thin film layer is formed to have a thickness of 40 Å to 70 Å and is crystallized to have a dielectric constant of 20 K to 30 K.

10 . The thin film of claim 9 , wherein the thin film layer is formed of a mixed material including at least one of hafnium (Hf) and zirconium (Zr).

11 . The thin film of claim 9 , wherein the thin film layer is partially crystallized and is formed to have a thickness of 40 Å to 70 Å and a dielectric constant of 20 K to 30 K.

12 . The thin film of claim 9 , wherein the dielectric constant of the thin film layer is determined based on the following Equation,

Cox
×

(

D
A

)

Cox is an oxide capacitance of the thin film layer, D is the thickness of the thin film layer, and A is an area of the thin film layer.

13 . The thin film of claim 9 , wherein the thin film layer is formed to have an equivalent oxide thickness (EOT) of 6.5 Å to 9.7 Å.

14 . The method of claim 2 , comprising:
a first purge step of injecting a purge gas onto the substrate after the adsorption step is performed; and a second purge step of injecting the purge gas onto the substrate after the deposition step is performed.

15 . The method of claim 3 , comprising:
a first purge step of injecting a purge gas onto the substrate after the adsorption step is performed; and a second purge step of injecting the purge gas onto the substrate after the deposition step is performed.

16 . The method of claim 4 , comprising:
a first purge step of injecting a purge gas onto the substrate after the adsorption step is performed; and a second purge step of injecting the purge gas onto the substrate after the deposition step is performed.

17 . The method of claim 5 , comprising:
a first purge step of injecting a purge gas onto the substrate after the adsorption step is performed; and a second purge step of injecting the purge gas onto the substrate after the deposition step is performed.

18 . The method of claim 6 , comprising:
a first purge step of injecting a purge gas onto the substrate after the adsorption step is performed; and a second purge step of injecting the purge gas onto the substrate after the deposition step is performed.

19 . The method of claim 7 , comprising:
a first purge step of injecting a purge gas onto the substrate after the adsorption step is performed; and a second purge step of injecting the purge gas onto the substrate after the deposition step is performed.

Assignees

• Jusung Eng Co Ltd

Inventors

• Kim Duck Ho
• Kim Min Hyuk
• Min Kyung In
• Park Chang Kyun
• Han Jun Hee

Classifications

• H10P14/69395 Primary

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6532 Primary

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title