Selective passivation and selective deposition

Patent metadata

Field	Value
Publication number	US-2025069885-A1
Application number	US-202418946444-A
Country	US
Kind code	A1
Filing date	Nov 13, 2024
Priority date	Feb 14, 2017
Publication date	Feb 27, 2025
Grant date	—

Abstract

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

First claim

What is claimed is:

1 . A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, wherein the first surface comprises metallic material and the second surface comprises an inorganic dielectric, the method comprising:
selectively forming a passivation layer comprising a polymer from vapor phase reactants on the first surface while leaving the second surface without the passivation layer; and selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer.

2 . The method of claim 1 , further comprising removing the passivation layer from the first surface while leaving the structural layer on the second surface.

3 . The method of claim 1 , wherein the structural layer comprises a metal oxide.

4 . The method of claim 1 , wherein the structural layer comprises zirconium oxide, hafnium oxide, or titanium oxide.

5 . The method of claim 1 , further comprising selectively removing material of the structural layer from the passivation layer without removing all of the material of the structural layer from the second surface.

6 . The method of claim 1 , further comprising: (i) selectively removing material of the structural layer from the passivation layer without removing all of the material of the structural layer from the second surface and without removing all of the passivation layer from the first surface, (ii) selectively depositing additional material of the structural layer from vapor phase reactants on the material of the structural layer formed on the second surface relative to the passivation layer, and (iii) selectively removing the additional material of the structural layer from the passivation layer without removing all of the additional material of the structural layer formed on the second surface to thereby form an increased thickness of the structural layer on the second surface.

7 . The method of claim 6 , wherein the selectively removing the material of the structural layer and the selectively removing the additional material of the structural layer comprise etch back processes.

8 . The method of claim 6 , further comprising removing the passivation layer from the first surface while leaving the structural layer on the second surface after the structural layer is fully formed.

9 . The method of claim 1 , wherein the polymer comprises a polyimide.

10 . The method of claim 1 , wherein the metal material comprises cobalt, copper, tungsten, or molybdenum.

11 . The method of claim 1 , wherein the inorganic dielectric comprises a silicon oxide.

12 . The method of claim 1 , further comprising selectively removing the passivation layer from the first surface after selectively depositing the structural layer on the second surface without removing the structural layer from the second surface, wherein the passivation layer is deposited directly on the first surface, and wherein material of the first surface on which the passivation layer is directly deposited remains after selectively removing the passivation layer.

13 . The method of claim 1 , wherein the selectively forming the passivation layer includes removing material of the passivation layer from the second surface using an etch process while leaving material of the passivation layer on the first surface.

14 . A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, wherein the first surface comprises metallic material and the second surface comprises an inorganic dielectric, the method comprising:
selectively forming a passivation layer comprising a polymer from vapor phase reactants on the first surface while leaving the second surface without the passivation layer; repeatedly and cyclically performing steps of:
(i) selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer, and
(ii) selectively removing material of the structural layer from the passivation layer without removing all of the material of the structural layer from the second surface to thereby form the structural layer on the second surface; and
removing the passivation layer from the first surface while leaving the structural layer on the second surface.

15 . The method of claim 14 , wherein the structural layer comprises a metal oxide.

16 . The method of claim 14 , wherein the structural layer comprises zirconium oxide, hafnium oxide, or titanium oxide.

17 . The method of claim 14 , wherein the polymer comprises a polyimide.

18 . The method of claim 14 , wherein the metal material comprises cobalt, copper, tungsten, or molybdenum.

19 . The method of claim 14 , wherein the inorganic dielectric comprises a silicon oxide.

20 . A system for selective deposition on a second surface of a part relative to a first surface of the part, the system comprising:
a reaction chamber defining a reaction space configured to accommodate at least one part that includes first and second surfaces have different compositions, wherein the first surface comprises metallic material and the second surface comprises an inorganic dielectric; a first reactant vessel configured to supply a vaporized first organic reactant to the reaction space; a second reactant vessel configured to supply a vaporized second reactant to the reaction space; and a control system configured to: (a) introduce the vaporized first organic reactant into the reaction space and selectively form a passivation layer comprising a polymer from the vaporized first organic reactant on the first surface while leaving the second surface without the passivation layer, and (b) introduce the vaporized second reactant into the reaction space and selectively deposit a structural layer from the vaporized second reactant on the second surface relative to the passivation layer.

Assignees

• Asm Ip Holding Bv

Inventors

• Tois Eva E
• Haukka Suvi P
• Matero Raija H
• Färm Elina
• Longrie Delphine
• Suemori Hidemi
• Maes Jan Willem
• Tuominen Marko
• Deng Shaoren
• Raaijmakers Ivo Johannes
• Illiberi Andrea

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P76/202

  for lift-off processes · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title