Rf pulsing assisted low-k film deposition with high mechanical strength

Patent metadata

Field	Value
Publication number	US-2025054749-A1
Application number	US-202318366395-A
Country	US
Kind code	A1
Filing date	Aug 7, 2023
Priority date	Aug 7, 2023
Publication date	Feb 13, 2025
Grant date	—

Abstract

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

First claim

1 . A semiconductor processing method comprising:
providing a silicon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region of the semiconductor processing chamber; forming a plasma of the silicon-containing precursor in the processing region, wherein the plasma is at least partially formed by a pulsing RF power operating at a plasma power less than or about 2,000 W; and forming a layer of silicon-containing material on the substrate, wherein the layer of silicon-containing material is characterized by a dielectric constant less than or about 3.0.

2 . The semiconductor processing method of claim 1 , wherein the silicon-containing precursor comprises at least one of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, ethoxydimethylsilane, isobutylmethyldimethoxysilane, vinylmethyldimethoxysilane, 1,1,3,3-tetramethyl-1,3-dimethoxydisiloxane, 1,3-dimethyl-1,1,3,3-tetramethoxydisiloxane, bis(trimethylsilyl)methane, bis(methyldimethoxysilyl)methane, bis(dimethylmethoxysilyl)methane, 1,3-diethoxy-1,3-dimethyl-1,3-disilacyclobutane, 1,1,3,3-tetramethyl-1,3-disilacyclobutane, or 1,3-dimethyl-1,3-diphenyl-1,3-disilacyclobutane.

3 . The semiconductor processing method of claim 1 , further comprising:
providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber with the silicon-containing precursor.

4 . The semiconductor processing method of claim 1 , wherein the RF pulsing power operates at a pulsing frequency less than or about 50,000 Hz and at a duty cycle between about 10% and about 90%.

5 . The semiconductor processing method of claim 1 , wherein the plasma is at least partially formed by an RF power operating at a pulsing frequency less than or about 10,000 Hz.

6 . The semiconductor processing method of claim 1 , wherein a temperature within the semiconductor processing chamber is maintained at less than or about 450° C. while forming the layer of silicon-containing material on the substrate.

7 . The semiconductor processing method of claim 1 , wherein a pressure within the semiconductor processing chamber is maintained at less than or about 500 Torr while forming the layer of silicon-containing material on the substrate.

8 . The semiconductor processing method of claim 1 , wherein the layer of silicon-containing material is characterized by a hardness of greater than or about 3.5 GPa.

9 . The semiconductor processing method of claim 1 , wherein the layer of silicon-containing material is characterized by a dielectric constant below or about 2.9.

10 . The semiconductor processing method of claim 1 , further comprising:
curing the layer of silicon-containing material on the substrate by directing 2 ultraviolet (UV) energy towards the substrate.

11 . The semiconductor processing method of claim 10 , wherein the curing comprises providing a helium-containing material, an argon-containing material, or both to the processing region of the semiconductor processing chamber at a temperature between about 75° C. and about 400° C. and a pressure between about 3 Torr and about 100 Torr.

12 . A semiconductor processing method comprising:
providing a silicon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region of the semiconductor processing chamber; forming a plasma of the silicon-containing precursor in the processing region, wherein the plasma is at least partially formed by a pulsing RF power operating at a pulsing frequency less than or about 50,000 Hz; and forming a layer of silicon-containing material on the substrate, wherein the layer of silicon-containing material is characterized by a hardness of greater than or about 3.5 GPa.

13 . The semiconductor processing method of claim 12 , wherein the silicon-containing precursor comprises at least one of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, ethoxydimethylsilane, isobutylmethyldimethoxysilane, vinylmethyldimethoxysilane, 1,1,3,3-tetramethyl-1,3-dimethoxydisiloxane, 1,3-dimethyl-1,1,3,3-tetramethoxydisiloxane, bis(trimethylsilyl)methane, bis(methyldimethoxysilyl)methane, bis(dimethylmethoxysilyl)methane, 1,3-diethoxy-1,3-dimethyl-1,3-disilacyclobutane, 1,1,3,3-tetramethyl-1,3-disilacyclobutane, or 1,3-dimethyl-1,3-diphenyl-1,3-disilacyclobutane.

14 . The semiconductor processing method of claim 12 , further comprising:
providing diatomic oxygen (O 2 ) to the processing region of the semiconductor processing chamber with the silicon-containing precursor.

15 . The semiconductor processing method of claim 12 , wherein the plasma is at least partially formed by an RF power operating at a pulsing frequency below about 5,000 Hz.

16 . The semiconductor processing method of claim 12 , wherein the plasma is at least partially formed by an RF power operating at a duty cycle between about 10% and 90%.

17 . The semiconductor processing method of claim 12 , wherein the layer of silicon-containing material is characterized by a dielectric constant less than or about 3.0.

18 . A semiconductor processing method comprising:
providing a silicon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region of the semiconductor processing chamber, and wherein the silicon-containing precursor comprises at least one of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, ethoxydimethylsilane, isobutylmethyldimethoxysilane, vinylmethyldimethoxysilane, 1,1,3,3-tetramethyl-1,3-dimethoxydisiloxane, 1,3-dimethyl-1,1,3,3-tetramethoxydisiloxane, bis(trimethylsilyl)methane, bis(methyldimethoxysilyl)methane, bis(dimethylmethoxysilyl)methane, 1,3-diethoxy-1,3-dimethyl-1,3-disilacyclobutane, 1,1,3,3-tetramethyl-1,3-disilacyclobutane, or 1,3-dimethyl-1,3-diphenyl-1,3-disilacyclobutane; forming a plasma of the silicon-containing precursor in the processing region, wherein the plasma is at least partially formed by a pulsing RF power, and forming a layer of silicon-containing material on the substrate, wherein the layer of silicon-containing material is characterized by a dielectric constant less than or about 3.0, and wherein the layer of silicon-containing material is characterized by a hardness of greater than or about 3.5 GPa.

19 . The semiconductor processing method of claim 18 , wherein the plasma is at least partially formed by an RF power operating at a plasma power greater than or about 500 W, at a pulsing frequency less than or about 10,000 Hz, and at a duty cycle between about 10% and 90%.

20 . The semiconductor processing method of claim 18 , wherein the layer of silicon-containing material is characterized by a dielectric constant less than or about 2.8, and wherein the layer of silicon-containing material is characterized by a hardness of greater than or about 4.5 GPa.

Assignees

• Applied Materials Inc

Inventors

• Zhao Kent
• Lu Rui
• Xie Bo
• Yao Shanshan
• Li Xiaobo
• Lang Chi-I
• Xia Li-Qun
• Venkataraman Shankar

Classifications

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6682 Primary

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6538

  by exposure to UV light · CPC title