Light detection apparatus and electronic device

Patent metadata

Field	Value
Publication number	US-2025031474-A1
Application number	US-202218715347-A
Country	US
Kind code	A1
Filing date	Nov 28, 2022
Priority date	Dec 8, 2021
Publication date	Jan 23, 2025
Grant date	—

Abstract

To provide a technique for improving image quality. A light detection apparatus includes: a semiconductor layer including a first surface and a second surface mutually positioned on opposite sides in a thickness direction; a plurality of photoelectric conversion regions provided on the semiconductor layer so as to be adjacent to each other via a separation region that stretches in the thickness direction of the semiconductor layer; a transistor provided for each of the photoelectric conversion regions on the side of the first surface of the semiconductor layer; and a transparent electrode which is provided on the side of the second surface of the semiconductor layer and to which a potential is applied. In addition, the separation region includes a conductor which stretches in the thickness direction of the semiconductor layer and the conductor is electrically connected on the side of the second surface of the semiconductor layer to the transparent electrode.

First claim

1 . A light detection apparatus, comprising:
a semiconductor layer including a first surface and a second surface mutually positioned on opposite sides in a thickness direction; a plurality of photoelectric conversion regions provided on the semiconductor layer so as to be adjacent to each other via a separation region that stretches in the thickness direction of the semiconductor layer; a transistor provided for each of the photoelectric conversion regions on the side of the first surface of the semiconductor layer; a conductor which is provided in the separation region and which stretches in the thickness direction of the semiconductor layer; and a transparent electrode which is provided on the side of the second surface of the semiconductor layer, which is electrically connected to the conductor on the side of the second surface of the semiconductor layer, and to which a potential is applied.

2 . The light detection apparatus according to claim 1 , wherein the transparent electrode overlaps with the separation region in a plan view.

3 . The light detection apparatus according to claim 1 , wherein the transparent electrode is constituted of a solid planar pattern which spreads over the plurality of photoelectric conversion regions in a plan view.

4 . The light detection apparatus according to claim 1 , wherein the transparent electrode is constituted of a grid-like planar pattern.

5 . The light detection apparatus according to claim 1 , wherein the transparent electrode is constituted of a ring-like planar pattern.

6 . The light detection apparatus according to claim 1 , wherein the transparent electrode is constituted of a striped planar pattern.

7 . The light detection apparatus according to claim 1 wherein the conductor is embedded in an excavated portion of the semiconductor layer via a separation insulating film.

8 . A light detection apparatus, comprising:
a semiconductor layer including a first surface and a second surface mutually positioned on opposite sides in a thickness direction; a plurality of photoelectric conversion regions provided on the semiconductor layer so as to be adjacent to each other via a separation region that stretches in the thickness direction of the semiconductor layer; and a transistor provided for each of the photoelectric conversion units on the side of the first surface of the semiconductor layer, wherein the separation region includes a floating conductor which stretches in the thickness direction of the semiconductor layer and which is in an electrically floating state.

9 . The light detection apparatus according to claim 8 , wherein a depth of the floating conductor is 2 μm or more from the first surface of the semiconductor layer.

10 . The light detection apparatus according to claim 8 , wherein the floating conductor reaches the second surface of the semiconductor layer.

11 . The light detection apparatus according to claim 8 , wherein the floating conductor is separated from the second surface of the semiconductor layer.

12 . The light detection apparatus according to claim 8 , wherein the floating conductor is constituted of a conductive semiconductor film or a metal film.

13 . The light detection apparatus according to claim 11 , wherein the floating conductor is embedded in an excavated portion of the semiconductor layer via a separation insulating film.

14 . The light detection apparatus according to claim 8 , further comprising a multilayer wiring layer provided on the side of the first surface of the semiconductor layer 20 .

15 . A light detection apparatus, comprising:
a semiconductor layer including a first surface and a second surface mutually positioned on opposite sides in a thickness direction; and a plurality of photoelectric conversion regions provided on the semiconductor layer so as to be adjacent to each other via a separation region that stretches in the thickness direction of the semiconductor layer, wherein each of the plurality of photoelectric conversion regions includes: a photoelectric conversion unit provided on the semiconductor layer; and a well region provided on the side of the first surface of the semiconductor layer so as to overlap with the photoelectric conversion unit in a plan view; and a transistor provided in the well region, and the separation region includes a conductor which stretches in the thickness direction of the semiconductor layer, and the well region of each of the photoelectric conversion regions which are adjacent to each other via the separation region is electrically connected via the conductor of the separation region.

16 . The light detection apparatus according to claim 15 , wherein the conductor is constituted of a semiconductor film of a same conductivity type as the well region.

17 . The light detection apparatus according to claim 15 , wherein the conductor includes: a head portion which is provided on the side of the first surface of the semiconductor layer and which is electrically connected to the well region; and a body portion which protrudes from the head portion with a width narrower than that of the head portion to the side of the second surface of the semiconductor layer.

18 . The light detection apparatus according to claim 15 , wherein
the well region is constituted of a first conductivity type, and the photoelectric conversion region includes: a first semiconductor region of a second conductivity type; and a second semiconductor region of a first conductivity type provided between sides of separation regions of the first semiconductor region.

19 . The light detection apparatus according to claim 15 , wherein
the plurality of photoelectric conversion regions include: a first photoelectric conversion region which is provided in the well region and which includes a power feeding contact region to which a potential is applied; and a second photoelectric conversion region which does not include the power feeding contact region.

20 . The light detection apparatus according to claim 15 , wherein the conductor is electrically connected on the side of the first surface of the semiconductor layer to an electrode to which a potential is applied.

21 . The light detection apparatus according to claim 15 , wherein the conductor is electrically connected on the side of the second surface of the semiconductor layer to an electrode to which a potential is applied.

22 . A light detection apparatus, comprising:
a semiconductor layer including a first surface and a second surface mutually positioned on opposite sides in a thickness direction; and a pixel array portion in which a pixel including a photoelectric conversion region partitioned by a separation region that stretches in the thickness direction of the semiconductor layer is arranged in plurality in a two-dimensional planar pattern on the semiconductor layer, wherein the photoelectric conversion region includes: a photoelectric conversion unit provided on the semiconductor layer; and a transistor provided on the side of the first surface of the semiconductor substrate, the separation region includes a conductor which stretches in the thickness direction of the semiconductor layer, and the conductor is electrically connected via a contact portion to a wiring to which a potential is applied in a periphery of the pixel array portion.

23 . The light detection apparatus according to claim 22 , wherein the contact portion is scattered in plu

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Morikawa Takafumi
• Nagata Kengo
• Ito Tomomi
• Masagaki Atsushi
• Yamashita Kazuyoshi
• MATSUYAMA Shota
• Daicho Akira
• Yoneda Kazuhiro
• Matsuo Junichi
• Nakamoto Yuta
• Fukunaga Hiroshi
• Ito Kyosuke
• Otake Yusuke
• Wakano Toshifumi

Classifications

• H10F39/182

  Colour image sensors · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/802

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title

• H10F39/807 Primary

  Pixel isolation structures · CPC title