Cubic carbon nitride crystal and method for producing same

Patent metadata

Field	Value
Publication number	US-2025026641-A1
Application number	US-202218709962-A
Country	US
Kind code	A1
Filing date	Nov 14, 2022
Priority date	Nov 15, 2021
Publication date	Jan 23, 2025
Grant date	—

Abstract

The present invention provides a C 3 N 4 having a cubic crystal system and a method for producing same.

First claim

1 .- 22 . (canceled)

23 . A C 3 N 4 crystal with a cubic crystal structure, which has an edge length of 2.0 μm or more.

24 . The C 3 N 4 crystal according to claim 23 , which has peaks at 40.9°, 47.6°, and 69.6° (2θ) in an XRD pattern.

25 . The C 3 N 4 crystal according to claim 23 , which has a C 3 N 4 concentration of 99.5% by mass or more in the crystal.

26 . A method for producing carbon nitride having a regular octahedral structure having an edge length of 2.0 μm or more, comprising subjecting a molten salt containing carbon and nitrogen anions to pulse electrolysis to oxidize the carbon and nitrogen anions, thereby forming carbon nitride represented by C 3 N 4 wherein an anode is a Pt electrode.

27 . The method for producing carbon nitride according to claim 26 , wherein the carbon and nitrogen anions are C 2 2− and N 3− , respectively.

28 . The production method according to claim 26 , wherein a potential-time graph in the pulse electrolysis shows a rectangle.

29 . The production method according to claim 26 , wherein a potential during potential application is 0.10 to 5.00 V in the pulse electrolysis.

30 . The production method according to claim 26 , wherein a potential application time is 0.01 to 5.0 seconds in the pulse electrolysis.

31 . The production method according to claim 26 , wherein a potential during a pause of potential application in the pulse electrolysis is an open circuit potential.

32 . The production method according to claim 26 , wherein a pause time of potential application is 1.0 seconds or more in the pulse electrolysis.

33 . The production method according to claim 26 , wherein the pulse electrolysis is performed under a nitrogen atmosphere or rare gas atmosphere.

34 . The production method according to claim 33 , wherein the rare gas atmosphere is an argon atmosphere.

35 . The production method according to claim 26 , wherein a cathode is an electrode of Ag, Cu, Ni, Pb, Hg, Tl, Bi, In, Sn, Cd, Au, Zn, Pd, Ga, Ge, Ni, Fe, Pt, Pd, Ru, Ti, Cr, Mo, W, V, Nb, Ta, Zr, or an alloy thereof, glassy carbon, natural graphite, isotropic graphite, pyrolytic graphite, plastic formed carbon, conductive diamond, or nitrogen.

36 . The production method according to claim 26 , wherein the cathode is a glassy carbon electrode.

37 . The production method according to claim 26 , wherein the molten salt is a molten salt of one or more salts selected from alkali metal or alkaline earth metal halides.

38 . The production method according to claim 26 , wherein a carbon anion source is CaC 2 .

39 . The production method according to claim 26 , wherein a nitrogen anion source is Li 3 N.

40 . A C 3 N 4 crystal with a cubic crystal structure, which has peaks at 40.9°, 47.6°,and 69.6° (2θ) in an XRD pattern.

41 . The C 3 N 4 crystal according to claim 40 , which has a C 3 N 4 concentration of 99.5% by mass or more in the crystal.

Assignees

• The Doshisha

Inventors

• Goto Takuya
• Suzuki Yuta
• Morishima Masashi

Classifications

• C01B21/0605 Primary

  Binary compounds of nitrogen with carbon · CPC title

• C01P2002/72

  by d-values or two theta-values, e.g. as X-ray diagram · CPC title

• C25B11/043

  Carbon, e.g. diamond or graphene · CPC title

• C25B11/042

  Electrodes formed of a single material · CPC title

• C25B1/01 Primary

  Products · CPC title