Semiconductor film and method of forming the same

Patent metadata

Field	Value
Publication number	US-10090470-B2
Application number	US-201615049435-A
Country	US
Kind code	B2
Filing date	Feb 22, 2016
Priority date	Feb 22, 2016
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

A method of forming a semiconductor film at pressure between 10 −5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.

First claim

The invention claimed is:

1. A method of forming a semiconductor film in the presence of a substrate, wherein the semiconductor film comprises a tri-s-triazine unit, the method comprising the steps of:
(i) providing a precursor material in a reaction container, wherein the precursor material is an organic material consisting of melamine;
(ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and
(iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate, where the method is devoid of the use of a vacuum system.

2. The method of claim 1 , wherein the precursor material is in the form of powder.

3. The method of claim 1 , wherein step (iii) is carried out by heating the precursor material with a temperature at or above a melting point or a sublimation point of the precursor material for a predetermined period of time.

4. The method of claim 1 , wherein step (iii) is carried out with a predetermined heating rate of about 0.1-100° C./min and a predetermined cooling rate of about 0.1-100° C./min.

5. The method of claim 3 , wherein step (iii) is carried out by heating the precursor material with a temperature above the sublimation point, in which the precursor material forms vapors and the vapors saturate the reaction container.

6. The method of claim 5 , wherein step (iii) further includes a condensing step of condensing the vapors on the conductive surface of the substrate.

7. The method of claim 5 , wherein the precursor material has a sublimation point of about 0° C. to about 600° C.

8. The method of claim 1 , wherein the semiconductor film comprises graphitic carbon nitride.

9. The method of claim 1 , wherein the substrate is selected from the group consisting of fluorine doped tin oxide coated glass, indium tin oxide coated glass and silicon.

Assignees

• Univ City Hong Kong

Inventors

• Zhang Ruiqin
• Bian Juncao

Classifications

• H01L2251/306

  Electricity · mapped topic

• C23C14/24

  Vacuum evaporation · CPC title

• H01G9/20

  Light-sensitive devices · CPC title

• H01L51/001

  Electricity · mapped topic

• H01L51/0035 Primary

  Electricity · mapped topic