Composition, compound, resin, substrate treatment method, and manufacturing method for semiconductor device

Patent metadata

Field	Value
Publication number	US-2024400949-A1
Application number	US-202418800584-A
Country	US
Kind code	A1
Filing date	Aug 12, 2024
Priority date	Feb 18, 2022
Publication date	Dec 5, 2024
Grant date	—

Abstract

The present invention provides a composition for a semiconductor device, where the composition is such that the removability of residues is excellent and the dissolution of tungsten is further suppressed. The composition for a semiconductor device contains a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom and water, where a ClogP of the polymerizable compound is 0.5 or more and a solubility of the resin in water at 25° C. is 0.01% by mass or more.

First claim

What is claimed is:

1 . A composition for a semiconductor device, comprising:
a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom; and water, wherein a ClogP of the polymerizable compound is 0.5 or more, and a solubility of the resin in water at 25° C. is 0.01% by mass or more.

2 . The composition according to claim 1 ,
wherein the polymerizable compound includes at least one selected from the group consisting of compounds represented by Formulae (1) to (3),
CH 2 =CR 1 -L 1 -(X′) n1   (1)

in Formula (1), R 1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, L 1 represents an (n1+1)-valent linking group, X 1 represents a group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and salts thereof, as well as a quaternary ammonium cationic group, and n1 represents an integer of 1 to 5, where in a case where n1 is an integer of 2 to 5, a plurality of X” 's may be the same or different from each other,
CH 2 =CR 2 —X 2   (2)

in Formula (2), R 2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and X 2 represents a nitrogen-containing heterocyclic ring having at least one group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and salts these groups, and a quaternary ammonium cationic group,

in Formula (3), a ring W represents a hydrocarbon ring or a heterocyclic ring, which has an ethylenically unsaturated group, L 3 represents a single bond or an (n3+1)-valent linking group, X 3 represents a group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and salts these groups, and a quaternary ammonium cationic group, and n3 represents an integer of 1 to 5, where in a case where n3 is an integer of 2 to 5, a plurality of X 3 's may be the same or different from each other.

3 . The composition according to claim 1 ,
wherein the polymerizable compound has at least one selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and salts thereof.

4 . The composition according to claim 1 ,
wherein the polymerizable compound has a primary amino group or a salt thereof.

5 . The composition according to claim 1 ,
wherein the polymerizable compound has an aromatic ring.

6 . The composition according to claim 1 ,
wherein the polymerizable compound is a compound represented by Formula (1a),

in the formula, Y's each independently represent a hydrogen atom or -L 2 -L 3 -NH 2 , provided that at least two Y's represent -L 2 -L 3 -NH 2 , L 2 represents a single bond or an oxygen atom, and L 3 represents an aliphatic hydrocarbon group having 1 to 5 carbon atoms.

7 . The composition according to claim 1 ,
wherein the resin further has a repeating unit B having an acid group.

8 . The composition according to claim 7 ,
wherein the acid group is a carboxy group.

9 . The composition according to claim 7 ,
wherein a ratio a/b of a molar number a of the repeating unit A to a molar number b of the repeating unit B is 10/90 to 80/20 where the repeating unit A and the repeating unit B are contained in the resin.

10 . The composition according to claim 1 ,
wherein the resin has a weight-average molecular weight of 1,000 to 500,000.

11 . The composition according to claim 1 , further comprising:
a removing agent.

12 . The composition according to claim 1 ,
wherein a content of the resin is 10 to 10,000 ppm by mass with respect to a total mass of the composition.

13 . The composition according to claim 1 , further comprising:
at least one selected from the group consisting of an oxidizing agent, a corrosion inhibitor, a surfactant, an antifoaming agent, and an organic solvent.

14 . The composition according to claim 1 ,
wherein the composition is a composition for a substrate having a metal-containing substance which contains at least one of tungsten or a tungsten alloy.

15 . The composition according to claim 1 ,
wherein the composition is used as a washing solution for removing etching residues or a washing solution for removing residues from a substrate after chemical mechanical polishing.

16 . A substrate treatment method comprising:
a step A of removing a metal-containing substance on a substrate by using the composition according to claim 1 .

17 . The substrate treatment method according to claim 16 , further comprising:
a step C of subjecting, after the step A, the substrate obtained in the step A to a rinsing treatment by using a rinsing liquid.

18 . A manufacturing method for a semiconductor device, comprising:
a step of treating a substrate by using the composition according to claim 1 .

19 . A compound represented by Formula (1a),

in the formula, Y's each independently represent a hydrogen atom or -L 2 -L 3 -NH 2 , provided that at least two Y's represent -L 2 -L 3 -NH 2 , L 2 represents a single bond or an oxygen atom, and L 3 represents an aliphatic hydrocarbon group having 1 to 5 carbon atoms.

20 . A resin comprising:
a repeating unit A derived from the compound according to claim 19 .

21 . A composition comprising:
the compound according to claim 19 .

22 . A compound represented by Formula (1b),

in the formula, Z's each independently represent a hydrogen atom or -L 2 -L 3 -OH, provided that at least two Z's represent -L 2 -L 3 -OH, L 2 represents a single bond or an oxygen atom, and L 3 represents an aliphatic hydrocarbon group having 1 to 5 carbon atoms.

Assignees

• Fujifilm Corp

Inventors

• Shimoju Naoya
• Sugishima Yasuo
• Takahashi Tomonori

Classifications

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C07D209/48

  with oxygen atoms in positions 1 and 3, e.g. phthalimide · CPC title

• C08F212/28

  Amines · CPC title

• C07C217/18

  the six-membered aromatic ring or condensed ring system containing that ring being further substituted · CPC title