Compositions for removing residues and related methods

Patent metadata

Field	Value
Publication number	US-2016108348-A1
Application number	US-201414514656-A
Country	US
Kind code	A1
Filing date	Oct 15, 2014
Priority date	Oct 15, 2014
Publication date	Apr 21, 2016
Grant date	—

Abstract

Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed.

First claim

What is claimed is:

1 . A composition for removing residues from a semiconductor structure, the composition comprising:
water, a base, a polydentate chelator, a degasser, and a fluorine source, the composition comprising greater than or equal to approximately 99 wt % of water and formulated to exhibit a pH of from approximately 10.0 to approximately 12.0.

2 . The composition of claim 1 , wherein the composition comprises greater than or equal to approximately 99.5 wt % of water.

3 . The composition of claim 1 , wherein the base, the polydentate chelator, the degasser, and the fluorine source, in combination, comprise less than or equal to approximately 0.5 wt % of the composition.

4 . The composition of claim 1 , wherein the base comprises tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, ammonia, ammonium hydroxide, an alkaline or alkali metal hydroxide, or combinations thereof.

5 . The composition of claim 1 , wherein the polydentate chelator comprises ethylenediamine tetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), nitrilotriacetic acid (NTA), ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, tetramethylethylenediamine, or combinations thereof.

6 . The composition of claim 1 , wherein the degasser comprises at least one glycol.

7 . The composition of claim 1 , wherein the fluorine source comprises ammonium fluoride, hydrogen fluoride, or combinations thereof.

8 . The composition of claim 1 , wherein the composition comprises water, tetramethylammonium hydroxide (TMAH), ethylenediamine tetraacetic acid (EDTA), dipropylene glycol (DPG), and ammonium fluoride, wherein the water comprises greater than or equal to approximately 99.5 wt % of the composition.

9 . The composition of claim 1 , wherein the composition comprises water, tetramethylammonium hydroxide (TMAH), ethylenediamine tetraacetic acid (EDTA), dipropylene glycol (DPG), and hydrogen fluoride, wherein the water comprises greater than or equal to approximately 99.5 wt % of the composition.

10 . The composition of claim 1 , further comprising at least one of a nonionic surfactant, an anionic surfactant, a siloxane, and benzotriazole.

11 . The composition of claim 1 , wherein the composition consists of water, tetramethylammonium hydroxide (TMAH), ethylenediamine tetraacetic acid (EDTA), dipropylene glycol (DPG), and ammonium fluoride, wherein the water comprises greater than or equal to approximately 99.5 wt % of the composition.

12 . The composition of claim 1 , wherein the composition comprises water, approximately 0.099 wt % tetramethylammonium hydroxide (TMAH), approximately 0.029 wt % of ethylenediamine tetraacetic acid (EDTA), approximately 0.134 wt % of dipropylene glycol (DPG), and approximately 0.0332 wt % of ammonium fluoride.

13 . The composition of claim 1 , wherein the pH of the composition is from approximately 10.0 to approximately 11.0.

14 . A method of removing residues from a semiconductor structure, the method comprising:
exposing a semiconductor structure to a composition to remove residues from the semiconductor structure, the semiconductor structure comprising at least one exposed chalcogenide material and the composition comprising water, a base, a polydentate chelator, a degasser, and a fluorine source, the composition comprising greater than or equal to approximately 99 wt % of water and formulated to exhibit a pH of from approximately 10.0 to approximately 12.0.

15 . The method of claim 14 , wherein exposing a semiconductor structure to a composition to remove residues from the semiconductor structure comprises removing the residues from the semiconductor structure without damaging at least one other exposed material.

16 . The method of claim 14 , wherein exposing a semiconductor structure to a composition to remove residues from the semiconductor structure comprises removing the residues from the semiconductor structure without damaging at least one exposed carbon material.

17 . A method of removing residues from a semiconductor structure, the method comprising:
forming a semiconductor structure comprising at least one chalcogenide material and an organic material in a stack structure; and exposing the semiconductor structure to a composition to remove residues from the semiconductor structure, the composition comprising:
water, a base, a polydentate chelator, a degasser, and a fluorine source, the composition comprising greater than or equal to approximately 99 wt % of water and formulated to exhibit a pH of from approximately 10.0 to approximately 12.0.

18 . The method of claim 17 , wherein forming a semiconductor structure comprising at least two chalcogenide materials and an organic material in a stack structure comprises forming at least two stack structures on a substrate of the semiconductor structure.

19 . The method of claim 17 , wherein forming a semiconductor structure comprising at least two chalcogenide materials and an organic material in a stack structure comprises forming the stack structure comprising a phase change material, a switching material, and carbon electrodes.

20 . The method of claim 17 , wherein forming a semiconductor structure comprising at least two chalcogenide materials and an organic material in a stack structure comprises forming the stack structure comprising a conductive material on a substrate, a first carbon electrode on the conductive material, a switching material on the first carbon electrode, a second carbon electrode on the switching material, a phase change material on the second carbon electrode, and a third carbon electrode on the phase change material.

21 . The method of claim 17 , wherein exposing the semiconductor structure to a composition comprises spin coating the composition on the semiconductor structure.

22 . The method of claim 17 , wherein exposing the semiconductor structure to a composition comprises exposing the semiconductor structure to the composition for from approximately 30 seconds to approximately 90 seconds.

23 . The method of claim 17 , wherein exposing the semiconductor structure to a composition comprises removing the residues from the semiconductor structure without damaging the at least two chalcogenide materials and the organic material.

24 . The method of claim 17 , further comprising exposing the semiconductor structure to a hydrogen plasma after exposing the semiconductor structure to the composition.

25 . A method of forming a composition for removing residues from a semiconductor structure, the method comprising:
dissolving ethylenediamine tetraacetic acid in a solution of water and tetramethylammonium hydroxide; and adding dipropylene glycol and ammonium fluoride to the solution to form the composition.

Assignees

• Micron Technology Inc

Inventors

• Franklin Cole S
• Imonigie Jerome A

Classifications

• C11D7/04

  Water-soluble compounds · CPC title

• C11D7/3245 Primary

  Aminoacids · CPC title

• C11D11/0047 Primary

  Chemistry & Metallurgy · mapped topic

• H01L45/1253

  Electricity · mapped topic

• C11D7/3209

  Amines or imines with one to four nitrogen atoms; Quaternized amines · CPC title