Transverse multimode semiconductor laser element

Patent metadata

Field	Value
Publication number	US-2024364078-A1
Application number	US-202418648297-A
Country	US
Kind code	A1
Filing date	Apr 26, 2024
Priority date	Apr 28, 2023
Publication date	Oct 31, 2024
Grant date	—

Abstract

A transverse multimode semiconductor laser element includes: a semiconductor layered portion that includes an active layer and has a waveguide structure, wherein the semiconductor layered portion includes: a first region that includes a first diffraction grating and has a refractive index n1, and a second region that includes a first core region having a refractive index n21 and a plurality of first cladding regions having a refractive index n22 respectively provided on opposite sides of the first core region, and allows a laser beam to propagate in a plurality of transverse modes. The laser beam emitted from the second region propagates through the first region at a maximum diffusion angle θmax1 determined by the refractive index n1, the refractive index n21, and the refractive index n22.

First claim

What is claimed is:

1 . A transverse multimode semiconductor laser element comprising:
a semiconductor layered portion that comprises an active layer and has a waveguide structure, wherein the semiconductor layered portion includes:
a first region that includes a first diffraction grating and has a refractive index n 1 , and
a second region that includes a first core region having a refractive index n 21 and a plurality of first cladding regions having a refractive index n 22 respectively provided on opposite sides of the first core region, and allows a laser beam to propagate in a plurality of transverse modes; wherein:
the laser beam emitted from the second region propagates through the first region at a maximum diffusion angle θ max1 determined by the refractive index n 1 , the refractive index n 21 , and the refractive index n 22 ; and in a cross section perpendicular to an optical axis of the laser beam, opposite end portions of the first region in a direction perpendicular to a stacking direction of the semiconductor layered portion are located outside virtual lines each extending at the maximum diffusion angle θ max1 from a corresponding one of opposite ends of a first emission end face of the first core region on the first region side.

2 . The transverse multimode semiconductor laser element according to claim 1 , wherein:
an interval between the end portions in the first diffraction grating is two times or more and 100 times or less a width of the first core region.

3 . The transverse multimode semiconductor laser element according to claim 2 , wherein:
a width of the first core region is 15 μm or more and 100 μm or less; and an interval between the ends of the first diffraction grating is 30 μm or more and 9,000 μm or less.

4 . The transverse multimode semiconductor laser element according to claim 1 , wherein:
an interval between the ends of the first diffraction grating is constant.

5 . The transverse multimode semiconductor laser element according to claim 2 , wherein:
an interval between the ends of the first diffraction grating is constant.

6 . The transverse multimode semiconductor laser element according to claim 3 , wherein:
an interval between the ends of the first diffraction grating is constant.

7 . The transverse multimode semiconductor laser element according to claim 1 , wherein:
a first end face of the first region from which the laser beam is output is inclined with respect to an optical axis of the laser beam propagating through the first core region and a periodic direction of the first diffraction grating.

8 . The transverse multimode semiconductor laser element according to claim 1 , wherein:
the semiconductor layered portion further comprises an n-side semiconductor layer, a p-side semiconductor layer; the active layer is located between the n-side semiconductor layer and the p-side semiconductor layer; and the first diffraction grating is provided in the n-side semiconductor layer or the p-side semiconductor layer.

9 . The transverse multimode semiconductor laser element according to claim 1 , wherein:
a full width at half maximum of a spectral linewidth of the laser beam emitted from a first end face of the first region on which the laser beam emitted from the second region is incident, or a second end face opposite to the first end face, is 0.01 nm or more and 0.6 nm or less.

10 . The transverse multimode semiconductor laser element according to claim 6 , wherein:
a full width at half maximum of a spectral linewidth of the laser beam emitted from a first end face of the first region on which the laser beam emitted from the second region is incident, or a second end face opposite to the first end face, is 0.01 nm or more and 0.6 nm or less.

11 . The transverse multimode semiconductor laser element according to claim 1 , wherein:
an M 2 factor of the laser beam is 2 or more and 100 or less.

12 . The transverse multimode semiconductor laser element according to claim 6 , wherein:
an M 2 factor of the laser beam is 2 or more and 100 or less.

13 . The transverse multimode semiconductor laser element according to claim 10 , wherein:
an M 2 factor of the laser beam is 2 or more and 100 or less.

14 . The transverse multimode semiconductor laser element according to claim 1 , wherein:
the semiconductor layered portion further includes a third region comprising a second diffraction grating and having a refractive index n 3 , the third region being on a side opposite the first region such that the second region is interposed between the first region and the third region; the laser beam emitted from the second region propagates through the third region at a maximum diffusion angle θ max3 determined by the refractive index n 3 , the refractive index n 21 , and the refractive index n 22 ; and in a cross section perpendicular to an optical axis of the laser beam, opposite end portions of the third region in a direction perpendicular to a stacking direction of the semiconductor layered portion are located outside virtual lines each extending at the maximum diffusion angle θ max3 from a corresponding one of opposite ends of a second emission end face of the first core region on the third region side.

15 . A transverse multimode semiconductor laser element comprising:
a semiconductor layered portion comprising an active layer, the semiconductor layered portion comprising:
a first region comprising a first diffraction grating, and
a second region that has a first core region and a plurality of first cladding regions respectively provided on opposite sides of the first core region, and allows a laser beam to propagate in a plurality of transverse modes; wherein:
the first region has a first end face that emits the laser beam; in a direction orthogonal to a stacking direction of the semiconductor layered portion, a width of the first end face is larger than a beam diameter of the laser beam; and in top view, in a direction orthogonal to a periodic direction of the first diffraction grating, the first region expands in a direction away from a center of the laser beam with respect to a shorter line among lines connecting an end of the beam and a first vertex that is a boundary between the first region and the first core region of the second region.

16 . A transverse multimode semiconductor laser element comprising:
a semiconductor layered portion comprising an active layer, the semiconductor layered portion comprising:
a first region comprising a first diffraction grating, and
a second region having a transverse multimode waveguide; wherein:
the first region comprises a first ridge having a first end face on a side where the laser beam is emitted, and second end faces and on a side opposite to the first end face; the second region comprises a second ridge having a first lateral face and a second lateral face opposite to the first lateral face; and in a cross-sectional view orthogonal to a periodic direction of the first diffraction grating:
a width of the first end face in a direction orthogonal to the stacking direction of the semiconductor layered portion is larger than a beam diameter of the laser beam, and
an angle formed by the second end face and the first lateral face and an angle formed by the second end face and the second lateral face are each 30° or more and 120° or less.

17 . A wavelength beam coupling device comprising
a plurality of light sources; and a diffraction grating; wherein: each of the plurality of light sources comprises:
the transve

Assignees

• Nichia Corp

Inventors

• Ogawa Hisashi

Classifications

• H01S5/4012

  Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms · CPC title

• H01S5/343

  in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} · CPC title

• H01S5/2214

  based on oxides or nitrides · CPC title

• H01S5/12 Primary

  the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18) · CPC title

• H01S5/2218 Primary

  having special optical properties · CPC title