Electrical break for substrate processing systems

Patent metadata

Field	Value
Publication number	US-2024339302-A1
Application number	US-202318206456-A
Country	US
Kind code	A1
Filing date	Jun 6, 2023
Priority date	Apr 10, 2023
Publication date	Oct 10, 2024
Grant date	—

Abstract

Systems, methods, and apparatus including designs embodied in machine-readable media for a gas break used in semiconductor processing systems. The apparatus includes a gas break structure comprising an insulating material and having one or more gas flow paths formed within a body of the gas break structure, the gas break structure configured to provide a specified impedance when coupled between a grounded gas distribution manifold and an electrically charged gas delivery nozzle, the gas break structure further comprising an internal structure having a specified geometry comprising a repeating structure and one or more empty gaps between elements of the repeating structure. The gas break can be formed using additive manufacturing.

First claim

What is claimed is:

1 . A system for semiconductor processing, the system comprising:
a chamber enclosing a first processing region; a first substrate support within the chamber and configured to retain a first substrate in the first processing region of the chamber; a plasma source configured to direct RF energy into the chamber; a gas distribution manifold wherein the gas distribution manifold is operatively coupled to the chamber to introduce an etching gas comprising one or more gases from the gas distribution manifold to a gas delivery nozzle of the chamber; and a gas break structure comprising an insulating material and having one or more gas flow paths formed within a body of the gas break structure, the gas break structure configured to provide a specified impedance when coupled between a grounded gas distribution manifold and an electrically charged gas delivery nozzle, the gas break structure further comprising an internal structure having a specified geometry comprising a repeating structure and one or more empty gaps between elements of the repeating structure.

2 . The system of claim 1 , wherein the one or more gas flow paths have a helical coil geometry.

3 . The system of claim 1 , wherein the one or more gas flow paths comprise two gas flow paths, the two gas flow paths have a double helical geometry.

4 . The system of claim 1 , wherein the one or more gas flow paths have a “U” shaped cross-section.

5 . The system of claim 1 , wherein the one or more gas flow paths have a dovetail shaped cross-section.

6 . The system of claim 1 , wherein the internal structure comprises a plurality of rib structures joined by one or more cross members.

7 . The system of claim 1 , wherein the internal structure comprises a coil structure surrounding a hollow interior.

8 . The system of claim 1 , wherein the internal structure comprises a hollow cylinder structure having a pair of cross beams within the hollow interior.

9 . The system of claim 1 , wherein the internal structure corresponds to a particular infill pattern, wherein the infill pattern comprises one or more of a grid pattern, a triangle pattern, a honeycomb pattern, a gyroid pattern, or a stacked wave pattern.

10 . The system of claim 1 , wherein the RF gas break is formed from one or more of a thermoplastic material or a ceramic material including ceramic matrix composites.

11 . A gas break structure embodied in a machine-readable medium for designing, manufacturing, or testing a design, the gas break structure comprising:
a gas break body comprising an insulating material configured to provide a specified impedance, the gas break body having one or more gas flow paths formed within the body and having a particular path geometry, the gas break structure further comprising an internal infill structure having a specified geometry comprising a repeating structure and one or more empty gaps between elements of the repeating structure.

12 . The gas break structure embodied in the machine readable medium of claim 11 , wherein the one or more gas flow paths have a curved geometry comprising one or more of a helical coil, double helical coil, or spiral geometry.

13 . The system of claim 1 , wherein the one or more gas flow paths comprise a first gas flow path having a first radial distance from a center of the gas break body and a second gas flow path having a second radial distance from the center of the gas break body, wherein the second radial distance is greater than the first radial distance.

14 . The system of claim 1 , wherein the one or more gas flow paths have a n-gon cross section where n is greater than 2.

15 . The system of claim 1 , wherein the internal structure comprises a plurality of rib structures joined by one or more cross members.

16 . The system of claim 1 , wherein the internal structure comprises a coil structure surrounding an interior that is at least partially hollow.

17 . The system of claim 1 , wherein the internal structure corresponds to a particular infill pattern, wherein the infill pattern comprises one or more of a grid pattern, a triangle pattern, a honeycomb pattern, a gyroid pattern, or a stacked wave pattern.

18 . A method of manufacturing a gas break structure, the method comprising:
forming, by an additive manufacturing system, a plurality of layers, the plurality of layers comprising: a body having a solid outer surface; two or more gas flow paths defined within the body, wherein the two or more gas flow paths extend along a longitudinal length of the body, each gas flow path having a specified path geometry; and an internal infill structure occupying a portion of the body, the internal infill structure having a specified geometry comprising structural elements and one or more hallow spaces between the structure elements.

19 . The method of claim 18 , wherein forming the plurality of layers comprising the internal infill structure comprises forming a particular infill pattern for the internal infill structure, wherein the infill pattern comprises one or more of a grid pattern, a triangle pattern, a honeycomb pattern, a gyroid pattern, or a stacked wave pattern.

20 . The method of claim 18 , wherein forming the plurality of layers comprises the one or more gas flow paths comprises forming two or more curved paths extending longitudinally from a first end face of the body to a second end face of the body.

Assignees

• Applied Materials Inc

Inventors

• Sarode Vishwanath Yogananda
• Nguyen Andrew
• Cho Tom K

Classifications

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• H01J2237/334

  Etching · CPC title

• B33Y80/00 Primary

  Products made by additive manufacturing · CPC title