Methods for silicon germanium uniformity control using multiple precursors

Patent metadata

Field	Value
Publication number	US-2024332016-A1
Application number	US-202418742250-A
Country	US
Kind code	A1
Filing date	Jun 13, 2024
Priority date	May 15, 2020
Publication date	Oct 3, 2024
Grant date	—

Abstract

A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

First claim

1 . A structure comprising a silicon germanium layer formed according to a method of forming the silicon germanium layer on a surface of a substrate, the method comprising the steps of:
providing the substrate within a reaction chamber; providing a first silicon precursor to the reaction chamber; providing a second silicon precursor to the reaction chamber; and providing a germanium precursor to the reaction chamber, wherein the steps of providing the first silicon precursor to the reaction chamber, providing the second silicon precursor to the reaction chamber, and providing the germanium precursor to the reaction chamber overlap.

2 . The structure of claim 1 , wherein the first silicon precursor consists of a halogenated silicon precursor.

3 . The structure of claim 2 , wherein the halogenated silicon precursor comprises a compound represented by a formula Si x W y H z , wherein W is a halide selected from the group consisting of fluorine, chlorine, bromine, and iodine, x and y are integers greater than zero, and z is an integer greater than or equal to zero.

4 . The structure of claim 2 , wherein the halogenated silicon precursor comprises a compound selected from the group consisting of trichlorosilane, dichlorosilane, silicon tetrachloride, a silicon bromide, and a silicon iodide.

5 . The structure of claim 1 , wherein the second silicon precursor consists of a nonhalogenated silicon precursor.

6 . A device comprising a silicon germanium layer formed according to a method of forming the silicon germanium layer on a surface of a substrate, the method comprising the steps of:
providing the substrate within a reaction chamber; providing a first silicon precursor to the reaction chamber; providing a second silicon precursor to the reaction chamber; and providing a germanium precursor to the reaction chamber, wherein the steps of providing the first silicon precursor to the reaction chamber, providing the second silicon precursor to the reaction chamber, and providing the germanium precursor to the reaction chamber overlap.

7 . The device of claim 6 , wherein the first silicon precursor consists of a halogenated silicon precursor.

8 . The device of claim 7 , wherein the halogenated silicon precursor comprises a compound represented by a formula Si x W y H z , wherein W is a halide selected from the group consisting of fluorine, chlorine, bromine, and iodine, x and y are integers greater than zero, and z is an integer greater than or equal to zero.

9 . The device of claim 7 , wherein the halogenated silicon precursor comprises a compound selected from the group consisting of trichlorosilane, dichlorosilane, silicon tetrachloride, a silicon bromide, and a silicon iodide.

10 . The device of claim 6 , wherein the second silicon precursor consists of a nonhalogenated silicon precursor.

11 . A method of forming a deposition layer on a substrate, comprising:
applying a precoating layer to a surface within a reaction chamber; providing the substrate within the reaction chamber having the precoating layer; providing a first reactant to the reaction chamber; providing a second reactant to the reaction chamber; and forming the deposition layer on the substrate, wherein the deposition layer comprises a product of the first reactant and the second reactant, and wherein the precoating layer comprises a substance comprised in at least one of the first reactant, the second reactant, or the deposition layer.

12 . The method of claim 11 , wherein a germanium concentration of the precoating layer during the step of applying the precoating layer is chosen to reduce nonuniformity of the deposition layer at an edge of the deposition layer.

13 . The method of claim 11 , wherein the precoating layer is applied to a thickness between about 1000 Angstroms and about 3000 Angstroms.

14 . The method of claim 11 , wherein the step of providing the substrate within the reaction chamber comprises heating the substrate to a temperature of less than 600° C.

15 . The method of claim 12 , wherein the edge of the deposition layer is an area of the deposition layer about 1.2 millimeters from a substrate edge

16 . The method of claim 12 , wherein the first reactant comprises a silicon precursor and the second reactant comprises a germanium precursor.

17 . The method of claim 16 , wherein the germanium precursor comprises one or more of germanium tetrachloride, germanium chlorohydride, germanium chlorobromide.

18 . The method of claim 16 , wherein the silicon precursor comprises a compound selected from the group consisting of trichlorosilane, dichlorosilane, silicon tetrachloride, a silicon bromide, and a silicon iodide.

19 . A system comprising:
one or more reaction chambers; a first silicon precursor source; a second silicon precursor source; a germanium precursor source; an exhaust source; and a controller, wherein the controller is configured to control gas flow of a first silicon precursor, a second silicon precursor, and a germanium precursor into at least one of the one or more reaction chambers to form a layer comprising silicon germanium overlying a surface of a substrate using a deposition process.

20 . The system of claim 19 , wherein the controller is configured to control the system by:
providing a first silicon precursor to the one or more reaction chambers from the first silicon precursor source; providing a second silicon precursor to the one or more reaction chambers from the second silicon precursor source; and providing a germanium precursor to the one or more reaction chambers from the germanium precursor source.

Assignees

• Asm Ip Holding Bv

Inventors

• Kajbafvala Amir
• Westrom Peter
• Margetis Joe
• Sun Xin
• Miskin Caleb
• Leow Yen Lin
• Lu Yanfu

Classifications

• H10P14/3411 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title