Chalcogenide memory device compositions

Patent metadata

Field	Value
Publication number	US-2024292766-A1
Application number	US-202418651335-A
Country	US
Kind code	A1
Filing date	Apr 30, 2024
Priority date	Feb 21, 2022
Publication date	Aug 29, 2024
Grant date	—

Abstract

Methods, systems, and devices for chalcogenide memory device compositions are described. A memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. A chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (S) or may be a combination of sulfur and one or more other elements, such as selenium (Se). In addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (Ge), at least one Group-III element, or arsenic (As).

First claim

1 . (canceled)

2 . A composition of matter, comprising:
sulfur; germanium; and at least one element selected from a group consisting of boron, aluminum, gallium, indium, and thallium in an amount ranging from 1 atomic percent (at. %) to 15 at. % of the composition.

3 . The composition of claim 2 , wherein the sulfur is within a component comprising sulfur, and wherein the component comprising sulfur is in an amount greater than or equal to 40 atomic percent (at. %) of the composition.

4 . The composition of claim 3 , wherein the component comprising sulfur further comprises selenium.

5 . The composition of claim 4 , wherein the composition comprises the sulfur in a first amount and the selenium in a second amount, the first amount greater than or equal to one-third of the second amount.

6 . The composition of claim 3 , wherein the component comprising sulfur further comprises oxygen.

7 . The composition of claim 2 , wherein the composition includes no selenium.

8 . The composition of claim 2 , wherein the composition comprises the sulfur in an amount greater than or equal to 10% of the composition.

9 . The composition of claim 2 , further comprising:
arsenic in an amount less than or equal to 30 at. % of the composition.

10 . The composition of claim 2 , wherein the germanium is in an amount ranging from 8 at. % to 35 at. % of the composition.

11 . The composition of claim 2 , wherein the at least one element selected from the group comprises indium in an amount ranging from 1 at. % to 15 at. % of the composition.

12 . The composition of claim 2 , wherein the at least one element selected from the group comprises boron in an amount ranging from 1 at. % to 15 at. % of the composition.

13 . The composition of claim 2 , wherein the at least one element selected from the group comprises aluminum in an amount ranging from 1 at. % to 15 at. % of the composition.

14 . The composition of claim 2 , wherein the at least one element selected from the group comprises gallium in an amount ranging from 1 at. % to 15 at. % of the composition.

15 . The composition of claim 2 , wherein the at least one element selected from the group comprises thallium in an amount ranging from 1 at. % to 15 at. % of the composition.

16 . An apparatus, comprising:
a memory cell comprising a chalcogenide material, the chalcogenide material comprising:
sulfur;
germanium; and
at least one element selected from a group consisting of boron, aluminum, gallium, indium, and thallium in an amount ranging from 1 at. % to 15 at. % of the chalcogenide material.

17 . The apparatus of claim 16 , wherein the sulfur is within a component comprising sulfur, and wherein the component comprising sulfur is in an amount greater than or equal to 40 atomic percent (at. %) of the composition.

18 . The apparatus of claim 17 , wherein the component comprising sulfur further comprises selenium.

19 . The apparatus of claim 17 , wherein the component comprising sulfur further comprises oxygen.

20 . The apparatus of claim 16 , wherein the memory cell comprises a storage element operable to store a logic value, the storage element comprising the chalcogenide material.

21 . A method, comprising:
activating a first access line; activating a second access line; and accessing, based at least in part on activating the first access line and the second access line, a memory cell that includes a chalcogenide material comprising sulfur, germanium, and at least one of boron, aluminum, gallium, indium, or thallium, wherein the at least one of boron, aluminum, gallium, indium, or thallium is in an amount ranging from 1 atomic percent (at. %) to 15 at. % of the chalcogenide material.

Assignees

• Micron Technology Inc

Inventors

• Collins Dale W
• Fantini Paolo
• Fratin Lorenzo
• Varesi Enrico

Classifications

• H10B63/80

  Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays · CPC title

• H10B63/10

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• C01B19/04

  Binary compounds {including binary selenium-tellurium compounds (C01B19/004, C01B19/005, C01B19/007 take precedence)} · CPC title

• C01B17/0243 Primary

  Other after-treatment of sulfur · CPC title

• H10N70/823

  adapted for essentially horizontal current flow, e.g. bridge type devices · CPC title