Power Semiconductor Device, Method for Manufacturing Same, and Power Conversion Device

Patent metadata

Field	Value
Publication number	US-2024274489-A1
Application number	US-202218566882-A
Country	US
Kind code	A1
Filing date	Jun 14, 2022
Priority date	Jun 18, 2021
Publication date	Aug 15, 2024
Grant date	—

Abstract

A power semiconductor device includes a power module part and a heat sink. An uneven part is formed in a module base in the power module part. The uneven part includes a recess and a buffer recess. The buffer recess is formed in a direction that crosses a direction in which the recess extends. An uneven part is formed on a heat sink base part in the heat sink. The uneven part and the uneven part are fitted together by a crimping process to integrate the module base of the power module part and a heat radiation diffusion part of the heat sink. The buffer recess is left as a space.

First claim

1 - 9 . (canceled)

10 . A power semiconductor device comprising:
a power module part including a module base on which a first uneven part is formed, the module base being equipped with a power semiconductor element, the power semiconductor element being sealed with a sealant; a heat sink base part on which a second uneven part is formed, the heat sink base part being joined to the module base in a manner in which the second uneven part and the first uneven part are fitted together; and a plurality of heat radiator fins that is attached to the heat sink base part, wherein on the module base and the heat sink base part, the first uneven part and the second uneven part have a portion at which the first uneven part and the second uneven part are fitted together, the portion extending in a first direction, the first uneven part includes a buffer recess that is left as a space with the module base and the heat sink base part joined together, the first uneven part is formed on a surface of the module base, the surface being the other surface opposite to one surface of the module base on which the power semiconductor element is mounted, and the buffer recess is formed in a flat part of the other surface toward the one surface, and formed to extend in a second direction that crosses the first direction.

11 . The power semiconductor device according to claim 10 , wherein
the heat sink base part includes a heat radiation diffusion part to which a plurality of the heat radiator fins are attached, and the second uneven part is formed on the heat radiation diffusion part.

12 . The power semiconductor device according to claim 10 , wherein
the heat sink base part includes
a heat radiation diffusion part to which a plurality of the heat radiator fins are attached, and
a raised part that is raised from the heat radiation diffusion part toward a side on which the power module part is positioned, and
the second uneven part is formed on the raised part.

13 . The power semiconductor device according to claim 10 , wherein any of the first uneven part and the second uneven part is provided with a discontinuous portion.

14 . The power semiconductor device according to claim 10 , wherein a plurality of the heat radiator fins are attached to a region other than a region positioned on an outer peripheral part of the heat sink base part.

15 . A power conversion device comprising:
a main conversion circuit including the power semiconductor device according to claim 10 , the main conversion circuit converting and outputting received power; and a control circuit that outputs a control signal to the main conversion circuit, the control signal being for controlling the main conversion circuit.

16 . A power semiconductor device comprising:
a power module part including a module base on which a first uneven part is formed, the module base being equipped with a power semiconductor element, the power semiconductor element being sealed with a sealant; a heat sink base part on which a second uneven part is formed, the heat sink base part being joined to the module base in a manner in which the second uneven part and the first uneven part are fitted together; and a plurality of heat radiator fins that is attached to the heat sink base part, wherein on the module base and the heat sink base part, the first uneven part and the second uneven part have a portion at which the first uneven part and the second uneven part are fitted together, the portion extending in a first direction, the second uneven part includes a buffer recess that is left as a space with the module base and the heat sink base part joined together, and the buffer recess is formed in a flat part of the heat sink base part toward a side opposite to a side to which the module base is joined, and formed to extend in a second direction that crosses the first direction.

17 . The power semiconductor device according to claim 16 , wherein
the heat sink base part includes a heat radiation diffusion part to which a plurality of the heat radiator fins are attached, and the second uneven part is formed on the heat radiation diffusion part.

18 . The power semiconductor device according to claim 16 , wherein
the heat sink base part includes
a heat radiation diffusion part to which a plurality of the heat radiator fins are attached, and
a raised part that is raised from the heat radiation diffusion part toward a side on which the power module part is positioned, and
the second uneven part is formed on the raised part.

19 . The power semiconductor device according to claim 16 , wherein any of the first uneven part and the second uneven part is provided with a discontinuous portion.

20 . The power semiconductor device according to claim 16 , wherein a plurality of the heat radiator fins are attached to a region other than a region positioned on an outer peripheral part of the heat sink base part.

21 . A power conversion device comprising:
a main conversion circuit including the power semiconductor device according to claim 16 , the main conversion circuit converting and outputting received power; and a control circuit that outputs a control signal to the main conversion circuit, the control signal being for controlling the main conversion circuit.

22 . A method for manufacturing a power semiconductor device, the method comprising:
preparing a module base on which a first uneven part is formed; forming a power module part by mounting a power semiconductor element on the module base and sealing the power semiconductor element with a sealant in a manner in which the first uneven part is exposed; preparing a heat sink base part on which a second uneven part is formed, the second uneven part being fitted into the first uneven part; and integrating the module base and the heat sink base part by opposing the first uneven part and the second uneven part to each other and pressing one of the module base in the power module part and the heat sink base part to another of the module base in the power module part and the heat sink base part, wherein in the preparing the module base and the preparing the heat sink base part, the first uneven part and the second uneven part are formed to have a portion at which the first uneven part and the second uneven part are fitted together, the portion extending in a first direction, and in the preparing the module base,
the first uneven part is formed on a surface of the module base, the surface being the other surface opposite to one surface of the module base on which the power semiconductor element is mounted,
the first uneven part is formed to include a buffer recess that is left as a space with the module base and the heat sink base part joined together, and
the buffer recess is formed in a flat part of the other surface toward the one surface, and formed to extend in a second direction that crosses the first direction.

23 . The method for manufacturing the power semiconductor device according to claim 22 , wherein
the preparing the heat sink base part includes preparing the heat sink base part on which a heat radiator fin insertion groove in which a plurality of heat radiator fins is each inserted and a crimp part are formed on an opposite side to a side to which the power module part is joined, the crimp part crimping the heat radiator fin inserted in the heat radiator fin insertion groove, and the joining the module base and the heat sink base part includes
opposing the first uneven part and the second uneven part to each other and disposing each of a plurality of the heat radiator fins in the corr

Assignees

• Mitsubishi Electric Corp

Inventors

• Tada Haruna
• Goto Masaki
• Rokubuichi Hodaka
• Terada hayato
• Sanda Yasuyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W74/127

  characterised by arrangements for sealing or adhesion · CPC title

• H10W70/027

  Mechanical treatments, e.g. deforming, punching or cutting · CPC title