Inhibitor for selectively depositing thin film and method for selectively depositing thin film

Patent metadata

Field	Value
Publication number	US-2024243010-A1
Application number	US-202418403204-A
Country	US
Kind code	A1
Filing date	Jan 3, 2024
Priority date	Jan 5, 2023
Publication date	Jul 18, 2024
Grant date	—

Abstract

An inhibitor for selectively depositing a thin film may include a compound represented by Formula 1 below:where, R1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group, R2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and n is an integer from 1 to 5. The inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer. The first layer may include a metal-based material, and the second layer is different from the first layer and may include an insulating material.

First claim

What is claimed is:

1 . An inhibitor for selectively depositing a thin film, the inhibitor comprising:
a compound represented by Formula 1 below, wherein the inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer, wherein the first layer comprises a metal-based material, and wherein the second layer is different from the first layer and comprises an insulating material,

wherein, in Formula 1,
R 1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group,
R 2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and
n is an integer from 1 to 5.

2 . The inhibitor of claim 1 , wherein, in the compound represented by Formula 1, R 1 is an aldehyde group, an amino group, or a C2 to C20 alkynyl group, R 2 is a halogen atom, or a C1 to C10 alkylhalide group, and n is an integer from 1 to 3.

3 . The inhibitor of claim 1 , wherein the compound represented by Formula 1 comprises 4-trifluoromethyl benzaldehyde, 3,5-bis(trifluoromethyl)aniline, 4-(trifluoromethyl)aniline, 1-ethynyl-3-fluorobenzene, 4-tert-butylphenylacetylene, 3-(trifluoromethyl)benzaldehyde, 4-(trifluoromethyl)acetophenone, 3,5-bis(trifluoromethyl)acetophenone, 3-(trifluoromethyl)acetophenone, 3-(trifluoromethyl)benzonitrile, 3-fluorophenylacetylene, 4-(trifluoromethyl)benzoyl chloride, 4-(methylthio)aniline, or a combination thereof.

4 . The inhibitor of claim 1 , wherein the metal-based material comprises a metal comprising W, Mo, Ru, Cu, or Co; an alloy containing two or more of metals of W, Mo, Ru, Cu, and Co; a metal oxide containing the metal; or a combination thereof.

5 . The inhibitor of claim 1 , wherein the insulating material comprises SiO 2 , a low-k material, or a combination thereof.

6 . The inhibitor of claim 1 , wherein an adsorption energy of the inhibitor with respect to the surface of the first layer is in a rage from about −3.20 eV to about −7.00 eV.

7 . A method for selectively depositing a thin film, the method comprising:
preparing a target layer comprising a first layer comprising a metal-based material and a second layer different from the first layer and comprising an insulating material; forming an inhibitor layer on a surface of the first layer by depositing an inhibitor comprising a compound represented by Formula 1 on the target layer such that the inhibitor is selectively adsorbed to the surface of the first layer; selectively forming a subsequent layer on a surface of the second layer by depositing the subsequent layer on the inhibitor layer and the second layer; and removing the inhibitor layer,

wherein, in Formula 1,
R 1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group,
R 2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and
n is an integer from 1 to 5.

8 . The method of claim 7 , wherein the compound represented by Formula 1 comprises 4-trifluoromethyl benzaldehyde, 3,5-bis(trifluoromethyl)aniline, 4-(trifluoromethyl)aniline, 1-ethynyl-3-fluorobenzene, 4-tert-butylphenylacetylene, 3-(trifluoromethyl)benzaldehyde, 4-(trifluoromethyl)acetophenone, 3,5-bis(trifluoromethyl)acetophenone, 3-(trifluoromethyl)acetophenone, 3-(trifluoromethyl)benzonitrile, 3-fluorophenylacetylene, 4-(trifluoromethyl)benzoyl chloride, 4-(methylthio)aniline, or a combination thereof.

9 . The method of claim 7 , wherein the metal-based material comprises a metal comprising W, Mo, Ru, Cu, or Co; an alloy containing two or more of metals of W, Mo, Ru, Cu, and Co; a metal oxide containing the metal; or a combination thereof.

10 . The method of claim 7 , wherein the insulating material comprises SiO 2 , a low-k material, or a combination thereof.

11 . The method of claim 7 , further comprising:
pretreating the surface of the first layer after the preparing of the target layer but before the forming of the inhibitor layer, wherein the pretreating of the surface of the first layer is performed by a method of dry etching, wet cleaning, or a combination thereof.

12 . The method of claim 11 , wherein the pretreating of the surface of the first layer is performed by a method of dry etching using hydrogen plasma, wet cleaning using HF solution, or a combination thereof.

13 . The method of claim 11 , wherein the pretreating of the surface of the first layer is performed by processing hydrogen plasma for about 1 second to about 20 minutes.

14 . The method of claim 7 , wherein the subsequent layer comprises tantalum nitride (TaN), titanium nitride (TiN) or a combination thereof.

15 . The method of claim 7 , wherein the depositing of the inhibitor in the forming of the inhibitor layer is performed at a temperature in a range from about 100° C. to about 300° C.

16 . The method of claim 7 , wherein the depositing of the subsequent layer in the forming of the subsequent layer is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), or a combination thereof.

17 . The method of claim 7 , wherein the removing of the inhibitor layer is performed by hydrogen plasma treatment.

18 . The method of claim 7 , further comprising:
after the removing of the inhibitor layer, processing the subsequent layer by physical vapor deposition (PVD).

19 . The method of claim 7 , wherein the second layer is positioned at both sides on the first layer perpendicularly to the first layer, and the second layer is positioned to be spaced apart from each other.

20 . The method of claim 19 , wherein a thickness of the subsequent layer formed on the surface of the second layer is in a range from about 1.5 to about 5 times of a thickness of the subsequent layer formed on the surface of the first layer.

Assignees

• Samsung Electronics Co Ltd
• Adeka Corp

Inventors

• Lee Jihyun
• Ko Eun Hyea
• Lee Soyoung
• Nguyen Thanh Cuong
• Han Hoon
• Hwang Byungkeun
• Uchiuzou Hiroyuki
• Murata Kiyoshi
• Yoshino Tomoharu
• Cho Younjoung

Classifications

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/6504

  In-situ cleaning · CPC title