Electron-enhanced atomic layer deposition (ee-ald) methods and devices prepared by same

Patent metadata

Field	Value
Publication number	US-2024240317-A1
Application number	US-202318096668-A
Country	US
Kind code	A1
Filing date	Jan 13, 2023
Priority date	Jan 13, 2023
Publication date	Jul 18, 2024
Grant date	—

Abstract

In one aspect, the present invention provides a method of promoting nucleation and/or growth of a conductive film on a solid substrate. In certain embodiments, the method comprises contacting at least a portion of the surface of the solid substrate with a volatile metal precursor in the presence of a background gas, wherein the volatile metal precursor is chemisorbed or physisorbed to at least a portion of the surface of the solid substrate to provide a metal precursor-adsorbed surface, and contacting at least a portion of the metal precursor-adsorbed substrate with an electron beam in the presence of the background gas. The present invention further provides nanodevices and/or microdevices comprising a conductive film prepared according to the methods described herein.

First claim

What is claimed is:

1 . A method of promoting nucleation and/or growth of a conductive film on a solid substrate, the method comprising:
(a) contacting at least a portion of a surface of the solid substrate with a volatile metal precursor in the presence of a background gas, wherein the volatile metal precursor is chemisorbed or physisorbed to at least a portion of the surface of the solid substrate to provide a metal precursor-adsorbed substrate surface; and (b) contacting at least a portion of the metal precursor-adsorbed substrate surface with an electron beam in the presence of the background gas.

2 . The method of claim 1 , wherein the volatile metal precursor comprises at least one selected from the group consisting of a metal, a metal-halogen complex, and a metal-organic complex, and mixtures thereof.

3 . The method of claim 2 , wherein the metal, metal-halogen complex, metal-organic complex, or any mixture thereof, comprises a metal selected from the group consisting of Ti, Ta, W, Mo, Zr, Hf, Zn, Sc, Nb, Cu, Ni, Pt, Ru, Ni, and Al.

4 . The method of claim 1 , wherein at least one of the following applies:
(a) the volatile metal precursor is an amide or imide of Be, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Si, Ga, Ge, As, Se, Y, Zr, Nb, Mo, Sn, Sb, Te, La, Hf, Ta, W, Pb, or Bi, optionally wherein the volatile metal precursor is tetrakis(dimethylamino)titanium (TDMAT); (b) the volatile metal precursor is a halide of B, C, Al, Si, P, Ti, V, Cr, Mn, Cu, Zn, Ga, Ge, Zr, Hb, Mo, Cd, In, Sn, Sb, Hf, Ta, W, or Pb; (c) the volatile metal precursor is an alkyl of B, Al, Si, Zn, Ga, Ge, Cd, In, Sn, Sb, Te, Hg, or Bi; (d) the volatile metal precursor is an alkoxide of B, Al, Si, Ti, V, Ni, Ge, Zr, Nb, Hf, Ta, or Gd; (e) the volatile metal precursor is a cyclopentadienyl of Mg, Ca, Sc, Ti, Mn, Ge, Co, Ni, Sr, Y, Zr, Ru, In, Ba, La, Hf, or Pt; and (f) the volatile metal precursor comprises a beta-diketonate or amidinate.

5 . The method of claim 1 , wherein the background gas has a pressure of about 1 mTorr to about 2 mTorr.

6 . The method of claim 1 , wherein the background gas comprises at least one selected from the group consisting of a hydride gas, an oxide gas, a nitride gas, a sulfide gas, and a halide or halogen gas.

7 . The method of claim 6 , wherein at least one of the following applies:
(a) the hydride gas is at least one selected from the group consisting of ammonia (NH 3 ), CH 4 , H 2 O, HF, HCl, SiH 4 , PH 3 , H 2 S, GeH 4 , AsH 3 , and H 2 Se; (b) the oxide gas is at least one selected from the group consisting of O 2 , O 3 , H 2 O 2 , and H 2 O; (c) the nitride gas is at least one selected from the group consisting of N 2 and NH 3 ; (d) the sulfide gas is at least one selected from the group consisting of S 8 and H 2 S; and (e) the halide or halogen gas is at least one selected from the group consisting of F 2 , HF, SF 6 , NF 3 , BF 3 , Cl 2 , HCl, BCl 3 , HBr, Br 2 , BBr 3 , HI, and I 2 .

8 . The method of claim 1 , wherein the solid substrate comprises at least one selected from the group consisting of a semiconductor, ceramic, metal, polymer, and metal-oxide, and mixtures thereof.

9 . The method of claim 8 , wherein the semiconductor comprises silicon.

10 . The method of claim 8 , wherein the semiconductor is selected from the group consisting of silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ), and crystalline silicon.

11 . The method of claim 1 , wherein the contacting of the volatile metal precursor and the solid substrate occurs for a period of about 0.1 to about 4 seconds.

12 . The method of claim 1 , wherein the contacting of the metal precursor-adsorbed substrate surface and the electron beam occurs for a period of about 20 seconds.

13 . The method of claim 1 , wherein the electron beam has a current of about 0.1 mA to about 100 mA.

14 . The method of claim 1 , wherein the electron beam has an energy of about 1 eV to about 500 eV.

15 . The method of claim 1 , wherein the electron beam is generated using a hollow cathode plasma electron source (HC-PES).

16 . The method of claim 1 , wherein steps (a) and (b) occur at a temperature of less than 150° C.

17 . The method of claim 16 , wherein steps (a) and (b) occur at a temperature of about 70° C.

18 . The method of claim 1 , wherein nucleation occurs by performing about 7 cycles of steps (a)-(b).

19 . The method of claim 1 , wherein steps (a)-(b) are repeated one or more times, wherein each cycle of steps (a)-(b) increases conductive film thickness by about 0.5 Å to about 2.0 Å.

20 . The method of claim 1 , wherein the conductive film comprises titanium nitride (TiN).

21 . The method of claim 20 , wherein the TiN film comprises at least 91% Ti and N.

22 . The method of claim 20 , wherein the TiN film has a Ti:N ratio of about 3:4.

23 . The method of claim 20 , wherein the conductive film is prepared by performing about 150 cycles of steps (a)-(b).

24 . The method of claim 23 , wherein the conductive film has a thickness of about 60 Å to about 70 Å.

25 . The method of claim 23 , wherein the conductive film has a resistivity of about 110 μΩ·cm to about 160 μΩ·cm.

26 . The method of claim 20 , wherein the conductive film is prepared by performing about 200 cycles of steps (a)-(b).

27 . The method of claim 26 , wherein the conductive film has a thickness of about 125 Å to 135 Å.

28 . The method of claim 26 , wherein the conductive film has a resistivity of about 120 μΩ·cm to about 150 μΩ·cm.

29 . A microdevice or nanodevice comprising a conductive film prepared according to the method of claim 1 .

30 . The microdevice or nanodevice of claim 29 , which is selected from the group consisting of a diffusion barrier, liner, transistor, channel materials, via, conduit, Josephson junction, superconducting device, electrical conductor, photovoltaic, transistor, diode, waveguide, electrical transmission line, light emitting diode, thermocouple, mirror, absorber for photons, photon emitter, radiation shield, and radiation detector.

31 . The microdevice or nanodevice of claim 29 , which is selected from the group consisting of a bolometer, transducer, temperature sensor, heater, thermistor, microbolometer, microphone, speaker, ultrasonic transducer, resistor, inductor, spiral inductor, mechanical actuator, flagellum, flagellum motor, freestanding nanodevice, freestanding microdevice, Bragg reflector, Bragg filter, antenna, terahertz detector, electromagnetic transformer, and electrical system.

32 . The microdevice or nanodevice of claim 29 , which is selected from the group consisting of a nanotube, nanowire, coaxial wire, hollow tube with nanoscale diameters, periodic structure, or metamaterial.

Assignees

• Univ Colorado Regents

Inventors

• George Steven
• Sobell Zachary

Classifications

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• C23C16/345

  Silicon nitride · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title