Electronic device package emi shielding with grounded mold interconnect

Patent metadata

Field	Value
Publication number	US-2024178154-A1
Application number	US-202218070708-A
Country	US
Kind code	A1
Filing date	Nov 29, 2022
Priority date	Nov 29, 2022
Publication date	May 30, 2024
Grant date	—

Abstract

An electronic device includes a multilevel package substrate, a semiconductor die, and a molded package structure, where the multilevel package substrate has opposite first and second substrate sides, first and second conductive pads spaced apart from one another along the first substrate side, and a conductive substrate terminal that is exposed along the second substrate side and is electrically coupled to the second conductive pad. The semiconductor die is attached to the first substrate side and has opposite first and second die sides, and a die terminal along the first die side, the die terminal electrically coupled to the first conductive pad. The molded has a package side, a metal shield along the package side, and a conductive package via that extends through the molded package structure and electrically couples the metal shield to the second conductive pad.

First claim

What is claimed is:

1 . An electronic device, comprising:
a multilevel package substrate having opposite first and second substrate sides, first and second conductive pads spaced apart from one another along the first substrate side, and a conductive substrate terminal that is exposed along the second substrate side and is electrically coupled to the second conductive pad; a semiconductor die attached to the first substrate side and having opposite first and second die sides, and a die terminal along the first die side, the die terminal electrically coupled to the first conductive pad; and a molded package structure that encloses the semiconductor die and a portion of the first substrate side, the molded package structure having a package side, a metal shield along the package side, and a conductive package via that extends through the molded package structure and electrically couples the metal shield to the second conductive pad.

2 . The electronic device of claim 1 , wherein the molded package structure has a second conductive via that contacts the metal shield and extends into the molded package structure toward the second die side.

3 . The electronic device of claim 2 , wherein:
the semiconductor die has a second metal shield along the second die side; and the second conductive via extends through the molded package structure and electrically couples the metal shield to the second metal shield.

4 . The electronic device of claim 3 , wherein the molded package structure has multiple instances of the second conductive via, each instance of the second conductive via extends through the molded package structure and electrically couples the metal shield to the second metal shield.

5 . The electronic device of claim 4 , wherein:
the multilevel package substrate has multiple instances of the second conductive pad; each instance of the second conductive pad is electrically coupled to the conductive substrate terminal; the molded package structure has multiple instances of the conductive package via; and each instance of the conductive package via extends through the molded package structure and electrically couples the metal shield to the second conductive pad.

6 . The electronic device of claim 2 , wherein the second conductive via is spaced apart from the second die side.

7 . The electronic device of claim 6 , wherein:
the molded package structure has multiple instances of the second conductive via; each instance of the second conductive via contacts the metal shield and extends into the molded package structure toward the second die side; and each instance of the second conductive via is spaced apart from the second die side.

8 . The electronic device of claim 7 , wherein:
the multilevel package substrate has multiple instances of the second conductive pad; each instance of the second conductive pad is electrically coupled to the conductive substrate terminal; the molded package structure has multiple instances of the conductive package via; and each instance of the conductive package via extends through the molded package structure and electrically couples the metal shield to the second conductive pad.

9 . The electronic device of claim 2 , wherein:
the multilevel package substrate has multiple instances of the second conductive pad; each instance of the second conductive pad is electrically coupled to the conductive substrate terminal; the molded package structure has multiple instances of the conductive package via; and each instance of the conductive package via extends through the molded package structure and electrically couples the metal shield to the second conductive pad.

10 . The electronic device of claim 1 , wherein:
the multilevel package substrate has multiple instances of the second conductive pad; each instance of the second conductive pad is electrically coupled to the conductive substrate terminal; the molded package structure has multiple instances of the conductive package via; and each instance of the conductive package via extends through the molded package structure and electrically couples the metal shield to the second conductive pad.

11 . The electronic device of claim 10 , wherein:
the electronic device has opposite bottom and top sides and four lateral sides; the semiconductor die is spaced apart from the four lateral sides; a first instance of the conductive package via is spaced apart from and between the semiconductor die and the first lateral side; a second instance of the conductive package via is spaced apart from and between the semiconductor die and the second lateral side; a third instance of the conductive package via is spaced apart from and between the semiconductor die and the third lateral side; and a fourth instance of the conductive package via is spaced apart from and between the semiconductor die and the fourth lateral side.

12 . The electronic device of claim 1 , wherein the metal shield includes a ferrite metal material.

13 . A method of fabricating an electronic device, the method comprising:
attaching a semiconductor die to a first substrate side of a multilevel package substrate with a die terminal of the semiconductor die electrically coupled to a first conductive pad of the multilevel package substrate; forming a molded package structure over the semiconductor die and a portion of the first substrate side; forming a hole through the molded package structure to expose a second conductive pad of the multilevel package substrate or a conductive material above the second conductive pad of the multilevel package substrate; filling the hole with conductive material to form a conductive package via that extends through the molded package structure and contacts the second conductive pad or the conductive material above the second conductive pad; and forming a metal shield along a package side of the molded package structure, the metal shield contacting the conductive package via.

14 . The method of claim 13 , further comprising:
forming a second hole into the molded package structure toward the second die side; and filling the second hole with conductive material to form a second conductive via that extends into the molded package structure toward the second die side; wherein the metal shield contacts the second conductive via.

15 . The method of claim 14 , further comprising forming a second metal shield along the second die side;
wherein:
forming the second hole exposes a portion of the second metal shield; and
filling the second hole with the conductive material forms the second conductive via that extends through the molded package structure and electrically couples the metal shield to the second metal shield.

16 . The method of claim 14 , wherein:
forming the second hole does not expose the second die side; and filling the second hole with the conductive material forms the second conductive via that is spaced apart from the second die side.

17 . The method of claim 14 , wherein forming the hole and forming the second hole include performing a laser ablation process.

18 . The method of claim 13 , wherein forming the hole includes performing a laser ablation process.

19 . The method of claim 14 , further comprising, before forming the molded package structure, performing an attachment process that attaches a solder ball to the second conductive pad of the multilevel package substrate;
wherein:
forming the hole through the molded package structure exposes a portion of the solder ball

Assignees

• Texas Instruments Inc

Inventors

• Tang Yiqi
• Murugan Rajen Manicon
• Gupta Chittranjan Mohan
• Chen Jie
• Williamson Jaimal Mallory

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07236

  Soldering or alloying · CPC title

• H10W72/241

  Dispositions, e.g. layouts · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W74/01

  Manufacture or treatment · CPC title