Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same

Patent metadata

Field	Value
Publication number	US-2024162208-A1
Application number	US-202218077192-A
Country	US
Kind code	A1
Filing date	Dec 7, 2022
Priority date	Nov 10, 2022
Publication date	May 16, 2024
Grant date	—

Abstract

A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.

First claim

What is claimed is:

1 . A structure with a photodiode, a high electron mobility transistor (HEMT) and a surface acoustic wave (SAW) device, comprising:
a photodiode, comprising:
a first III-V semiconductor layer, a first N-type III-V semiconductor layer, a multi-quantum well (MQW) layer, a second III-V semiconductor layer, a P-type III-V semiconductor layer and a first electrode disposed from bottom to top; and
a second electrode disposed on and contacting the first N-type III-V semiconductor layer;
an HEMT comprising:
a channel layer;
an active layer disposed on the channel layer;
a P-type gate disposed on the active layer;
a gate electrode disposed on and contacting the P-type gate; and
two source/drain electrodes respectively disposed at two sides of the P-type gate, wherein the two source/drain electrodes are embedded within the active layer and the channel layer;
wherein Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate, Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.

2 . The structure with a photodiode, an HEMT and an SAW device of claim 1 , further comprising:
an SAW device, wherein the SAW device comprises: a piezoelectric layer; an interdigital transducer disposed on and contacting the piezoelectric layer; wherein Schottky contact is between the interdigital transducer and the piezoelectric layer.

3 . The structure with a photodiode, an HEMT and an SAW device of claim 1 , further comprising two second N-type III-V semiconductor layers embedded within the channel layer, and each of the two second N-type III-V semiconductor layers respectively contacting one of the two source/drain electrodes.

4 . The structure with a photodiode, an HEMT and an SAW device of claim 3 , wherein the first III-V semiconductor layer and the two second N-type III-V semiconductor layers are made of the same material.

5 . The structure with a photodiode, an HEMT and an SAW device of claim 4 , wherein the first III-V semiconductor layer and the two second N-type III-V semiconductor layers are made of N-type gallium nitride.

6 . The structure with a photodiode, an HEMT and an SAW device of claim 1 , wherein the P-type III-V semiconductor layer and the P-type gate are made of the same material.

7 . The structure with a photodiode, an HEMT and an SAW device of claim 6 , wherein the P-type III-V semiconductor layer and the P-type gate are made of P-type gallium nitride.

8 . The structure with a photodiode, an HEMT and an SAW device of claim 1 , wherein the two source/drain electrodes and the second electrode are made of the same material.

9 . The structure with a photodiode, an HEMT and an SAW device of claim 8 , wherein the two source/drain electrodes and the second electrode are made of ohmic metal, and the ohmic metal comprises Ti/Al/TiN, Si/Ti/Al/TiN, Si/Ti/Ta/Al/TiN or Si/Ti/Al/Ti/Au.

10 . The structure with a photodiode, an HEMT and an SAW device of claim 2 , wherein the first electrode, the gate electrode and the interdigital transducer are made of the same material.

11 . The structure with a photodiode, an HEMT and an SAW device of claim 10 , wherein the first electrode, the gate electrode and the interdigital transducer are made of Schottky metal and the Schottky metal comprises TiN/Al/TiN, Ni/Au, W/Au or Ni/Ag.

12 . A fabricating method of a structure with a photodiode, a high electron mobility transistor (HEMT) and a surface acoustic wave (SAW) device, comprising:
providing a substrate which is divided into a photodiode region and a transistor region; forming a first III-V semiconductor layer covering the substrate; forming two first recesses embedded into the first III-V semiconductor layer within the transistor region; forming an N-type III-V semiconductor layer and a multi-quantum well (MQW) layer covering the first III-V semiconductor layer from bottom to top, wherein the N-type III-V semiconductor layer fills up the two first recesses; removing the N-type III-V semiconductor layer on a top surface of the first III-V semiconductor layer and the MQW layer on the top surface of the first III-V semiconductor layer; after removing the N-type III-V semiconductor layer and the MQW layer on the top surface of the first III-V semiconductor layer, forming a second III-V semiconductor layer and a P-type III-V semiconductor material layer from bottom to top to stack within the photodiode region and the transistor region; removing part of the P-type III-V semiconductor material layer, wherein the P-type III-V semiconductor material layer remaining within the photodiode region becomes a P-type semiconductor layer, and the P-type III-V semiconductor material layer remaining within the transistor region becomes a P-type gate; forming two first conductive layers respectively covering the P-type III-V semiconductor material layer and the P-type gate; forming two second recesses respectively in each of the first recesses; and forming three second conductive layers, wherein two of the three second conductive layers respectively fill in the two second recesses, one of the three second conductive layers contacts the N-type III-V semiconductor layer within the photodiode region.

13 . The fabricating method of a structure with a photodiode, an HEMT and an SAW device of claim 12 , wherein the substrate further comprising an SAW region, before the N-type III-V semiconductor layer and the MQW layer on the top surface of the first III-V semiconductor layer are removed, the first III-V semiconductor layer, the N-type III-V semiconductor layer and the MQW layer cover the SAW region from bottom to top.

14 . The fabricating method of a structure with a photodiode, an HEMT and an SAW device of claim 13 , further comprising:
when removing the N-type III-V semiconductor layer and the MQW layer on the top surface of the first III-V semiconductor layer, the N-type III-V semiconductor layer and the MQW layer within the SAW region are removed simultaneously; when forming the second III-V semiconductor layer and the P-type III-V semiconductor material layer from bottom to top to stack within the photodiode region and the transistor region, the second III-V semiconductor layer and the P-type III-V semiconductor material layer also stack within the SAW region; when forming the P-type III-V semiconductor layer and the P-type gate, the P-type III-V semiconductor material layer within the SAW region is removed; when forming the two first conductive layers, another first conductive layer is formed to cover the second III-V semiconductor layer within the SAW region.

15 . The fabricating method of a structure with a photodiode, an HEMT and an SAW device of claim 14 , further comprising etching the first conductive layer within the SAW region to form an interdigital transducer.

16 . The fabricating method of a structure with a photodiode, an HEMT and an SAW device of claim 12 , wherein the first conductive layers are Schottky metal and the Schottky metal comprises TiN/Al/TiN, Ni/Au, W/Au or Ni/Ag.

17 . The fabricating method of a structure with a photodiode, an HEMT and an SAW device of claim 12 , wherein the second conductive layers are ohmic metal, and the ohmic metal comprises Ti/Al/TiN, Si/Ti/Al/TiN, Si/Ti/Ta/Al/TiN or Si/Ti/Al/Ti/Au.

Assignees

• United Microelectronics Corp

Inventors

• Lin da-jun
• Chang Chih-Wei
• Tsai Fu-Yu
• Tsai Bin-Siang
• Chiu Chung-Yi

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10D64/258

  characterised by the relative positions of the source or drain electrodes with respect to the gate electrode · CPC title

• H10D64/64

  Electrodes comprising a Schottky barrier to a semiconductor · CPC title

• H10D64/01

  Manufacture or treatment · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title