Sensor device

Patent metadata

Field	Value
Publication number	US-2024145615-A1
Application number	US-202218278221-A
Country	US
Kind code	A1
Filing date	Feb 22, 2022
Priority date	Feb 22, 2021
Publication date	May 2, 2024
Grant date	—

Abstract

A sensor device includes a carrier having a via for guiding an electrical contact from a bottom surface to a top surface of the carrier. The device also includes an integrated circuit on the carrier, a sensor element, an optoelectronic component on the top surface of the carrier, and a first electrically conductive contact element on the via an electrically connected thereto. The device further includes a substantially opaque encapsulation material enclosing the sensor element, the optoelectronic component, and the first electrically conductive contact element such that a surface of the sensor element and of the optoelectronic component opposite the carrier is uncovered by the encapsulation material. The device additionally includes a first conductor track on the encapsulation material electrically connecting the first electrically conductive contact element and the integrated circuit, and a second conductor track on the encapsulation material electrically connecting the integrated circuit with the optoelectronic component.

First claim

1 . A sensor device comprising:
a carrier substrate having at least one contact via for guiding an electrical contact from a bottom surface to a top surface of the carrier substrate; an integrated circuit arranged on the top surface of the carrier substrate; at least one sensor element arranged on or integrated into the integrated circuit; at least one optoelectronic component arranged on the top surface of the carrier substrate at a distance from the integrated circuit; at least one first electrically conductive contact element arranged on the at least one contact via and electrically connected thereto; a substantially opaque first encapsulation material, which encloses the at least one sensor element, the at least one optoelectronic component, and the at least one first electrically conductive contact element in lateral direction in such a way that at least one surface of the at least one sensor element and of the at least one optoelectronic component opposite the carrier substrate remains uncovered by the substantially opaque first encapsulation material; at least one first conductor track formed on the substantially opaque first encapsulation material and electrically connecting the at least one first electrically conductive contact element and the integrated circuit, and at least one second conductor track formed on the substantially opaque first encapsulation material and electrically connecting the integrated circuit with the at least one optoelectronic component.

2 . Sensor The sensor device according to claim 1 ,
wherein a structured layer of a substantially opaque material is arranged on the substantially opaque first encapsulation material in such a way that the photosensitive region of the at least one sensor element and the light-emitting region of the at least one optoelectronic component remain uncovered of the substantially opaque material of the structured layer.

3 . The sensor device according to claim 2 ,
wherein the structured layer of the substantially opaque material comprises a photostructurable lacquer, in particular a black photostructurable epoxy or acrylic lacquer.

4 . The sensor device according to claim 1 ,
wherein at least the photosensitive region of the at least one sensor element and the light-emitting region of the at least one optoelectronic component remain uncovered.

5 . The sensor device according to claim 2 ,
wherein the photosensitive region of the at least one sensor element and the light-emitting region of the at least one optoelectronic component are covered by an at least partially transparent material.

6 . The sensor device according to claim 1 ,
wherein a total height of the sensor device does not exceed 400 μm.

7 . The sensor device according to claim 1 ,
wherein the at least one optoelectronic device is formed by an infrared light emitting VCSEL or an infrared light emitting LED.

8 . The sensor device according to claim 1 ,
wherein the at least one sensor element is arranged on the integrated circuit and the substantially opaque first encapsulation material is substantially flush with a surface of the at least one optoelectronic component and of the integrated circuit opposite the carrier substrate.

9 . The sensor device according to claim 8 ,
wherein at least one second electrically conductive contact element is arranged on the integrated circuit and a substantially opaque second encapsulation material encloses the at least one sensor element and the at least one second electrically conductive contact element in the lateral direction in such a way that at least the light-emitting region of the at least one optoelectronic component and a surface of the at least one sensor element opposite the carrier substrate remain uncovered by the substantially opaque second encapsulation material.

10 . The sensor device according to claim 9 ,
wherein at least one third conductor track is formed on the substantially opaque second encapsulation material electrically connecting the at least one sensor element with the at least one second electrically conductive contact element.

11 . The sensor device according to claim 8 ,
wherein a window is formed in the substantially opaque second encapsulation material above the at least one optoelectronic component.

12 . The sensor device according to claim 11 ,
wherein the window is filled with an at least partially transparent material.

13 . The sensor device according to claim 1 ,
wherein an at least partially transparent encapsulation material is arranged on the substantially opaque first encapsulation material or on the substantially opaque second encapsulation material, which covers at least the at least one sensor element.

14 . The sensor device according to claim 1 ,
wherein the substantially opaque first encapsulation material comprises, in a region between the at least one sensor element and the at least one optoelectronic component, an elevation, in particular a dam, which projects beyond the at least one optoelectronic component and the at least one sensor element.

15 . The sensor device according to claim 1 ,
wherein at least one of the at least one first, the at least one second and the at least one third conductor track is formed by a planar interconnect.

16 . The sensor device according to claim 1 ,
wherein at least one of the at least one first and the at least one second electrically conductive contact element is formed by a metallic ellipsoid.

17 . The sensor device according to claim 1 ,
wherein at least one of the at least one first and the at least one second electrically conductive contact element is formed by at least two stud bumps stacked on top of each other or by at least two nailheads produced by a ball bonding method.

18 . The sensor device according to claim 1 ,
wherein at least one of the at least one first and the at least one second electrically conductive contact element is formed by an opening through the substantially opaque first encapsulation material, the side surfaces of which are metallized.

19 . A sensor device comprising:
a carrier substrate having at least one contact via for guiding an electrical contact from a bottom surface to a top surface of the carrier substrate and at least one first cavity; an integrated circuit arranged in the first cavity; at least one sensor element arranged on or integrated into the integrated circuit; and a first conductor track formed on the carrier substrate and electrically connecting the at least one contact via with the integrated circuit; and an at least partially transparent encapsulation material covering at least the integrated circuit and the first conductor track.

20 . The sensor device according to claim 19 ,
wherein the carrier substrate comprises at least a second cavity in which an optoelectronic component is arranged.

21 . The sensor device according to claim 20 ,
wherein the carrier substrate comprises at least one further contact via and a second conductor track, and wherein the second conductor track is formed on the carrier substrate and electrically connects the at least one further contact via with the optoelectronic component.

22 . The sensor device according to claim 19 ,
wherein at least the first cavity is formed such that a top surface of the integrated circuit does not project beyond the top surface of the carrier substrate.

23 . The sensor device according to claim 19 ,
wherein at least the a

Assignees

• Ams Osram Int Gmbh

Inventors

• Boescke Tim
• Assig Maximilian
• Schwarz Thomas
• Waldschik Andreas

Classifications

• H10W90/293

  characterised by non-galvanic coupling between the chips, e.g. capacitive coupling · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W70/093

  Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W70/655

  Fan-out layouts · CPC title