Stacked dies and methods for forming bonded structures

Patent metadata

Field	Value
Publication number	US-2024145458-A1
Application number	US-202318399478-A
Country	US
Kind code	A1
Filing date	Dec 28, 2023
Priority date	May 19, 2016
Publication date	May 2, 2024
Grant date	—

Abstract

In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

First claim

1 . (canceled)

2 . A bonded structure of stacked dies, comprising:
a first integrated device die, wherein the first integrated device die comprises an upper surface opposite a lower surface and a side surface between the upper and lower surfaces of the first integrated device die and wherein the upper surface comprises first conductive features and a first nonconductive region in which the first conductive features are at least partially embedded; a second integrated device die directly bonded to the upper surface of the first integrated device die without an intervening adhesive, wherein the second integrated device die comprises an upper surface opposite a lower surface and a side surface between the lower and upper surfaces of the second integrated device die, wherein the lower surface comprises second conductive features and a second nonconductive region in which the second conductive features are at least partially embedded, and wherein the first conductive features of the first integrated device die are directly bonded to the second conductive features of the second integrated device die and the first nonconductive region of the first integrated device die is directly bonded to the second nonconductive region of the lower surface of the second integrated device die; and a protective material disposed on the side surfaces of the first and second integrated device dies, wherein the protective material has an outer surface characteristic of singulation after forming the protective material and directly bonding the second integrated device die to the upper surface of the first integrated device die.

3 . The bonded structure of claim 2 , wherein the protective material has a coefficient of thermal expansion that is within 10 ppm/° C. of a coefficient of thermal expansion of the first integrated device die.

4 . The bonded structure of claim 2 , wherein the protective material comprises a first protective layer on a side surface of the first integrated device die and a second protective layer on a side surface of the second integrated device die, the first and second protective layers having an interface therebetween.

5 . The bonded structure of claim 2 , wherein the protective material comprises a first layer on the side surfaces of the first and second integrated device dies and a second layer disposed over the first layer.

6 . The bonded structure of claim 2 , wherein the first nonconductive region of the first integrated device die is covalently bonded to the second nonconductive region of the lower surface of the second integrated device die.

7 . The bonded structure of claim 2 , wherein the protective material comprises a polymer material.

8 . The bonded structure of claim 7 , wherein the protective material comprises filler particles within the polymer material.

9 . The bonded structure of claim 7 , wherein the polymer material has a Poisson ratio between 0.4 and 0.5.

10 . The bonded structure of claim 2 , wherein the protective material comprises a first protective material, the bonded structure further comprising:
a second protective material disposed over the upper surface of the second integrated device die.

11 . The bonded structure of claim 2 , wherein a thickness of the second integrated device die is less than 40 m.

12 . The bonded structure of claim 2 , wherein the side surfaces of the first and integrated device dies are aligned with each other.

13 . A bonded structure of stacked dies, comprising:
a first integrated device die, wherein the first integrated device die comprises an upper surface opposite a lower surface and a side surface between the upper and lower surfaces of the first integrated device die and wherein the upper surface comprises first conductive features and a first nonconductive region in which the first conductive features are at least partially embedded; a second integrated device die directly bonded to the upper surface of the first integrated device die without an intervening adhesive, wherein the second integrated device die comprises an upper surface opposite a lower surface and a side surface between the upper and lower surfaces of the second integrated device die, wherein the lower surface comprises second conductive features and a second nonconductive region in which the second conductive features are at least partially embedded, and wherein the first conductive features of the first integrated device die are directly bonded to the second conductive features of the second integrated device die and the first nonconductive region of the first integrated device die is directly bonded to the second nonconductive region of the lower surface of the second integrated device die; and a protective material disposed on the side surfaces of the first and second integrated device die, wherein the protective material comprises a polymer material.

14 . The bonded structure of claim 13 , wherein the protective material comprises filler particles within the polymer material.

15 . The bonded structure of claim 13 , wherein the protective material has an outer surface characteristic of singulation after forming the protective material and directly bonding the second integrated device die to the upper surface of the first integrated device die.

16 . The bonded structure of claim 13 , wherein the first nonconductive region of the first integrated device die is covalently bonded to the second nonconductive region of the lower surface of the second integrated device die.

17 . The bonded structure of claim 13 , wherein the protective material has a coefficient of thermal expansion that is within 10 ppm/° C. of a coefficient of thermal expansion of the first integrated device die.

18 . The bonded structure of claim 13 , wherein the protective material comprises a first protective layer on a side surface of the first integrated device die and a second protective layer on a side surface of the second integrated device die, the first and second protective layers having an interface therebetween.

19 . The bonded structure of claim 13 , wherein the protective material comprises a first protective material, the bonded structure further comprising:
a second protective material disposed over the upper surface of the second integrated device die.

20 . The bonded structure of claim 13 , wherein a thickness of the second integrated device die is less than 40 m.

21 . The bonded structure of claim 13 , wherein the side surfaces of the first and integrated device dies are aligned with each other.

Assignees

• Adeia Semiconductor Bonding Technologies Inc

Inventors

• Uzoh Cyprian Emeka
• Sitaram Arkalgud R
• Enquist Paul

Classifications

• H10P72/70

  for supporting or gripping · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10W90/722

  between stacked chips · CPC title