Method for cleaning semiconductor substrate, method for manufacturing processed semiconductor substrate, and peeling and dissolving composition

Patent metadata

Field	Value
Publication number	US-2024132806-A1
Application number	US-202218037680-A
Country	US
Kind code	A1
Filing date	Sep 13, 2022
Priority date	Sep 16, 2021
Publication date	Apr 25, 2024
Grant date	—

Abstract

A method for cleaning a semiconductor substrate includes peeling and dissolving an adhesive layer formed on a semiconductor substrate using a peeling and dissolving composition, in which the peeling and dissolving composition contains: a component [I]: a quaternary ammonium salt; a component [II]: an amide-based solvent; and a component [III]: a solvent represented by the following Formula (L):
L 1 -L 3 -L 2   (L)

where L 1 and L 2 each independently represents an alkyl group having 2 to 5 carbon atoms, and L 3 represents O or S.

First claim

1 . A method for cleaning a semiconductor substrate, the method comprising peeling and dissolving an adhesive layer formed on a semiconductor substrate using a peeling and dissolving composition,
wherein the peeling and dissolving composition contains: a component [I]: a quaternary ammonium salt; a component [II]: an amide-based solvent; and a component [III]: a solvent represented by the following Formula (L):
L 1 -L 3 -L 2   (L)

(in the formula, L 1 and L 2 each independently represent an alkyl group having 2 to 5 carbon atoms, and L 3 represents O or S).

2 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the peeling and dissolving composition further contains a component [IV]: a solvent represented by the following Formula (T) or the following Formula (G):

(in the formula, X 1 and X 3 each independently represent an alkyl group or an acyl group (X 4 —C(═O)—), X 2 represents an alkylene group, n represents 2 or 3, and X 4 represents an alkyl group),

(in the formula, L 11 and L 12 each independently represent an alkyl group having 1 to 6 carbon atoms, and a total number of carbon atoms in the alkyl group of L 11 and carbon atoms in the alkyl group of L 12 is 7 or less).

3 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the quaternary ammonium salt is a halogen-containing quaternary ammonium salt.

4 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the amide-based solvent is an acid amide derivative represented by the following Formula (Z) or a compound represented by the following Formula (Y):

(in the formula, R 0 represents an ethyl group, a propyl group, or an isopropyl group, and R A and R B each independently represent an alkyl group having 1 to 4 carbon atoms),

(in the formula, R 101 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R 102 represents an alkylene group having 1 to 6 carbon atoms or a group represented by the following Formula (Y1)),

(in the formula, R 103 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R 104 represents an alkylene group having 1 to 5 carbon atoms, *1 represents a bond bonded to a carbon atom in Formula (Y), and *2 represents a bond bonded to a nitrogen atom in Formula (Y)).

5 . The method for cleaning a semiconductor substrate according to claim 1 , wherein L 1 and L 2 are the same groups.

6 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the adhesive layer is a film obtained using an adhesive composition containing an adhesive component (S) containing at least one selected from a siloxane-based adhesive, an acrylic resin-based adhesive, an epoxy resin-based adhesive, a polyamide-based adhesive, a polystyrene-based adhesive, a polyimide adhesive, and a phenolic resin-based adhesive.

7 . The method for cleaning a semiconductor substrate according to claim 6 , wherein the adhesive component (S) contains a siloxane-based adhesive.

8 . The method for cleaning a semiconductor substrate according to claim 7 , wherein the siloxane-based adhesive contains a polyorganosiloxane component (A′) which is cured by a hydrosilylation reaction.

9 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the peeling and dissolving includes eliminating the peeled adhesive layer.

10 . A method for manufacturing a processed semiconductor substrate, the method comprising:
manufacturing a laminate including a semiconductor substrate, a support substrate, and an adhesive layer obtained using an adhesive composition; processing the semiconductor substrate of the obtained laminate; separating the semiconductor substrate and the adhesive layer from the support substrate; and peeling and dissolving the adhesive layer formed on the semiconductor substrate using a peeling and dissolving composition to remove the adhesive layer, wherein the peeling and dissolving composition contains: a component [I]: a quaternary ammonium salt; a component [II]: an amide-based solvent; and a component [III]: a solvent represented by the following Formula (L):
L 1 -L 3 -L 2   (L)

(in the formula, L 1 and L 2 each independently represent an alkyl group having 2 to 5 carbon atoms, and L 3 represents O or S).

11 . The method for manufacturing a processed semiconductor substrate according to claim 10 , wherein the peeling and dissolving composition further contains a component [IV]: a solvent represented by the following Formula (T) or the following Formula (G):

(in the formula, X 1 and X 3 each independently represent an alkyl group or an acyl group (X 4 —C(═O)—), X 2 represents an alkylene group, n represents 2 or 3, and X 4 represents an alkyl group),

(in the formula, L 11 and L 12 each independently represent an alkyl group having 1 to 6 carbon atoms, and a total number of carbon atoms in the alkyl group of L 11 and carbon atoms in the alkyl group of L 12 is 7 or less).

12 . The method for manufacturing a processed semiconductor substrate according to claim 10 , wherein the quaternary ammonium salt is a halogen-containing quaternary ammonium salt.

13 . The method for manufacturing a processed semiconductor substrate according to claim 10 , wherein the amide-based solvent is an acid amide derivative represented by the following Formula (Z) or a compound represented by the following Formula (Y):

(in the formula, R 0 represents an ethyl group, a propyl group, or an isopropyl group, and R A and R B each independently represent an alkyl group having 1 to 4 carbon atoms),

(in the formula, R 101 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R 102 represents an alkylene group having 1 to 6 carbon atoms or a group represented by the following Formula (Y1)),

(in the formula, R 103 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R 104 represents an alkylene group having 1 to 5 carbon atoms, *1 represents a bond bonded to a carbon atom in Formula (Y), and *2 represents a bond bonded to a nitrogen atom in Formula (Y)).

14 . The method for manufacturing a processed semiconductor substrate according to claim 10 , wherein L 1 and L 2 are the same groups.

15 . The method for manufacturing a processed semiconductor substrate according to claim 10 , wherein the adhesive layer is a film obtained using an adhesive composition containing an adhesive component (S) containing at least one selected from a

Assignees

• Nissan Chemical Corp

Inventors

• YAGYU Masafumi
• Okuno Takahisa
• Shinjo Tetsuya

Classifications

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title