Backside deposition for wafer bow management

Patent metadata

Field	Value
Publication number	US-2024096605-A1
Application number	US-202217946947-A
Country	US
Kind code	A1
Filing date	Sep 16, 2022
Priority date	Sep 16, 2022
Publication date	Mar 21, 2024
Grant date	—

Abstract

Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber, and a first gas feed system on a first side of the pedestal. In an embodiment, the first gas feed system comprises a first exhaust line with a first valve to open and close the first exhaust line, and a first source gas feed line with a second valve to open and close the first source gas feed line. In an embodiment, the semiconductor processing tool further comprises a second gas feed system on a second side of the pedestal. In an embodiment, the second gas feed system comprises a second exhaust line with a third valve to open and close the second exhaust line, and a second source gas feed line with a fourth valve to open and close the second source gas feed line.

First claim

What is claimed is:

1 . A semiconductor processing tool, comprising:
a chamber; a pedestal in the chamber; a first gas feed system on a first side of the pedestal, wherein the first gas feed system comprises:
a first exhaust line with a first valve to open and close the first exhaust line; and
a first source gas feed line with a second valve to open and close the first source gas feed line; and
a second gas feed system on a second side of the pedestal, wherein the second gas feed system comprises:
a second exhaust line with a third valve to open and close the second exhaust line; and
a second source gas feed line with a fourth valve to open and close the second source gas feed line.

2 . The semiconductor processing tool of claim 1 , further comprising:
lift pins configured to extend out of the pedestal to lift a substrate.

3 . The semiconductor processing tool of claim 1 , further comprising:
a first showerhead at an entrance of the first gas feed system; and a second showerhead at an entrance to the second gas feed system.

4 . The semiconductor processing tool of claim 3 , wherein the first showerhead and the second showerhead are substantially similar to each other.

5 . The semiconductor processing tool of claim 1 , further comprising:
a grounded electrode over the pedestal.

6 . The semiconductor processing tool of claim 5 , wherein the pedestal is coupled to an RF source.

7 . The semiconductor processing tool of claim 1 , further comprising:
a heater over the pedestal.

8 . The semiconductor processing tool of claim 1 , further comprising:
an inert gas line that is configured to flow an inert gas into the chamber above the pedestal.

9 . The semiconductor processing tool of claim 8 , wherein the inert gas line flows the inert gas through a showerhead over the pedestal.

10 . The semiconductor processing tool of claim 9 , wherein a substrate is supported between the showerhead over the pedestal and the pedestal, wherein a plasma is struck below the substrate.

11 . The semiconductor processing tool of claim 1 , wherein the substrate is configured to be rotated at a constant angular speed or a varying angular speed.

12 . A semiconductor processing tool, comprising:
a pedestal; a showerhead over the pedestal wherein the showerhead comprises a first plate with first holes and a second plate with second holes over the first plate; and lift pins configured to lift a substrate over the pedestal and the showerhead.

13 . The semiconductor processing tool of claim 12 , wherein a gap is provided between the first plate and the second plate.

14 . The semiconductor processing tool of claim 12 , wherein the showerhead distributes a process gas across a bottom surface of a substrate supported by the lift pins.

15 . The semiconductor processing tool of claim 12 , wherein the pedestal is coupled to an RF source.

16 . A semiconductor processing tool, comprising:
a chamber; a pedestal in the chamber, wherein the pedestal is coupled to an RF source; a plate over the pedestal, wherein the plate is coupled to an electrical ground; and a gas distribution assembly between the pedestal and the plate, wherein the gas distribution assembly is configured to supply a process gas to a backside of a substrate.

17 . The semiconductor processing tool of claim 16 , wherein the gas distribution assembly is configured to have two or more zones, wherein each zone is configured to have independently controllable gas flow rates.

18 . The semiconductor processing tool of claim 17 , wherein the two or more zones include a center zone, and four peripheral zones outside of the center zone.

19 . The semiconductor processing tool of claim 16 , wherein the pedestal is configured to be tilted so a first side of the pedestal is closer to the plate than a second side of the pedestal.

20 . The semiconductor processing tool of claim 16 , further comprising:
a plurality of valves coupled to the gas distribution assembly, wherein the plurality of valves are independently controllable to modify a gas flow out of the gas distribution assembly.

Assignees

• Applied Materials Inc

Inventors

• Kotrappa Arun Kumar
• Baginagere Chandrashekara
• Sundar Ramcharan
• Fazeli Seyyed
• Subramani Anantha
• Zhu Siyu
• Singhal Akhil
• Kraus Philip Allan

Classifications

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H01J2237/20207

  Tilt · CPC title

• H01J2237/20214

  Rotation · CPC title

• H01J2237/332

  Coating · CPC title

• H01J37/3244

  Gas supply means · CPC title