Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Patent metadata

Field	Value
Publication number	US-2024030296-A1
Application number	US-202318376014-A
Country	US
Kind code	A1
Filing date	Oct 3, 2023
Priority date	Nov 16, 2018
Publication date	Jan 25, 2024
Grant date	—

Abstract

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

First claim

What is claimed is:

1 . A semiconductor processing apparatus, comprising:
a reaction chamber configured to hold a substrate, the reaction chamber including at least one chamber wall; a precursor delivery system in fluid communication with the reaction chamber; and a controller operably connected to at least one of the reaction chamber or the precursor delivery system and comprising a storage medium having instructions stored thereon configured to perform operations including:
regulating a temperature of a first precursor below a temperature of 70° C.; and
depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process, wherein a unit deposition cycle comprises:
contacting the substrate with a metal vapor phase precursor from the precursor delivery system;
contacting the substrate with a silicon vapor phase precursor from the precursor delivery system; and
contacting the substrate with a hydrogen peroxide precursor from the precursor delivery system,

wherein the first precursor is at least one of the metal vapor phase precursor, the silicon vapor phase precursor, or the hydrogen peroxide precursor.

2 . The apparatus of claim 1 , wherein the regulating the temperature of the first precursor below a temperature of 70° C. comprises regulating the temperature of the first precursor below a temperature of 70° C. prior to introduction into the reaction chamber.

3 . The apparatus of claim 1 , further comprising a gas dispenser coupled to the reaction chamber in fluid communication with the precursor delivery system.

4 . The apparatus of claim 3 , wherein the operations further comprise regulating a temperature of the gas dispenser below a temperature of 70° C.

5 . The apparatus of claim 4 , wherein the regulating the temperature of the first precursor below a temperature of 70° C. comprises regulating the temperature of the first precursor below a temperature of 70° C. during flow through the gas dispenser.

6 . The apparatus of claim 1 , wherein the precursor delivery system comprises:
a metal precursor source in fluid communication with the reaction chamber for providing the metal vapor phase precursor; a silicon precursor source in fluid communication with the reaction chamber for providing the silicon vapor phase precursor; and a hydrogen peroxide precursor source in fluid communication with the reaction chamber for providing the hydrogen peroxide precursor.

7 . The apparatus of claim 1 , wherein in at least a portion of the at least one chamber wall is temperature-controlled.

8 . The apparatus of claim 7 , wherein the regulating the temperature of the first precursor below a temperature of 70° C. comprises regulating the temperature of the first precursor in the reaction chamber.

9 . The apparatus of claim 1 , wherein the operations further comprise repeating the unit deposition cycle two or more times.

10 . The apparatus of claim 1 , wherein the metal silicate film comprises an atomic percentage of silicon between approximately 10 atomic-% and approximately 60 atomic-%.

11 . A semiconductor processing apparatus, comprising:
a reaction chamber configured to hold a substrate, the reaction chamber including at least one chamber wall; a precursor delivery system in fluid communication with the reaction chamber; and a controller operably connected to at least one of the reaction chamber or the precursor delivery system and comprising a storage medium having instructions stored thereon configured to perform operations including:
regulating a temperature of a hydrogen peroxide precursor below a temperature of 70° C.; and
depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process, wherein a unit deposition cycle comprises:
contacting the substrate with a metal vapor phase precursor from the precursor delivery system;
contacting the substrate with a silicon vapor phase precursor from the precursor delivery system; and
contacting the substrate with a hydrogen peroxide precursor from the precursor delivery system.

12 . The apparatus of claim 11 , wherein the regulating the temperature of the hydrogen peroxide precursor below a temperature of 70° C. comprises regulating the temperature of the hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber.

13 . The apparatus of claim 11 , further comprising a gas dispenser coupled to the reaction chamber in fluid communication with the precursor delivery system.

14 . The apparatus of claim 13 , wherein the operations further comprise regulating a temperature of the gas dispenser below a temperature of 70° C.

15 . The apparatus of claim 14 , wherein the regulating the temperature of the hydrogen peroxide precursor below a temperature of 70° C. comprises regulating the temperature of the hydrogen peroxide precursor below a temperature of 70° C. during flow through the gas dispenser.

16 . The apparatus of claim 11 , wherein the precursor delivery system comprises:
a metal precursor source in fluid communication with the reaction chamber for providing the metal vapor phase precursor; a silicon precursor source in fluid communication with the reaction chamber for providing the silicon vapor phase precursor; and a hydrogen peroxide precursor source in fluid communication with the reaction chamber for providing the hydrogen peroxide precursor.

17 . The apparatus of claim 11 , wherein in at least a portion of the at least one chamber wall comprise is temperature-controlled.

18 . The apparatus of claim 17 , wherein the regulating the temperature of the hydrogen peroxide precursor below a temperature of 70° C. comprises regulating the temperature of the hydrogen peroxide precursor in the reaction chamber.

19 . The apparatus of claim 11 , wherein the metal silicate film comprises at least one of:
a carbon impurity level of less than 1 atomic-%; or a halide level of less than about 0.2 atomic-%.

20 . A semiconductor processing apparatus, comprising:
a reaction chamber configured to hold a substrate, the reaction chamber including at least one chamber wall; a precursor delivery system in fluid communication with the reaction chamber; a gas dispenser coupled to the reaction chamber in fluid communication with the precursor delivery system; and a controller operably connected to at least one of the reaction chamber, the precursor delivery system, or the gas dispenser and comprising a storage medium having instructions stored thereon configured to perform operations including:
regulating a temperature of at least one of the precursor delivery system, at least a portion of the at least one chamber wall, or the gas dispenser below a temperature of 70° C.;
depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process, wherein a unit deposition cycle comprises:
contacting the substrate with a metal vapor phase precursor from the precursor delivery system;
contacting the substrate with a silicon vapor phase precursor from the precursor delivery system; and
contacting the substrate with a hydrogen peroxide precursor from the precursor delivery system.

Assignees

• Asm Ip Holding Bv

Inventors

• Tang Fu
• Hsu Peng-Fu
• Givens Michael Eugene
• Xie Qi

Classifications

• H10P14/6929

  the material containing aluminium, e.g. AlSiOx · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10D64/01332

  Making the insulator · CPC title