Semiconductor devices

Patent metadata

Field	Value
Publication number	US-2023317811-A1
Application number	US-202217989435-A
Country	US
Kind code	A1
Filing date	Nov 17, 2022
Priority date	Mar 30, 2022
Publication date	Oct 5, 2023
Grant date	—

Abstract

A semiconductor device includes a channel on a substrate, the channel including a two-dimensional (2D) material, a gate insulating layer on a portion of the channel, a gate electrode on the gate insulating layer, first and second contact patterns on respective portions of the channel, the first and second contact patterns including a carbide of a transition metal, and first and second source/drain electrodes on the first and second contact patterns, respectively, and the first and second source/drain electrodes including a metal.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a channel on a substrate, the channel comprising a two-dimensional (2D) material; a gate insulating layer on a portion of the channel; a gate electrode on the gate insulating layer; a first contact pattern on a first portion of the channel and a second contact pattern on a second portion of the channel, the first contact pattern and the second contact pattern comprising a carbide of a transition metal; and a first source/drain electrode on the first contact pattern and a second source/drain electrode on the second contact pattern, the first source/drain electrode and the second source/drain electrode comprising a metal.

2 . The semiconductor device of claim 1 , wherein the transition metal comprises at least one from among molybdenum (Mo), tungsten (W), rhenium (Re), technetium (Tc), niobium (Nb), tantalum (Ta), hafnium (Hf), zirconium (Zr), titanium (Ti) and vanadium (V).

3 . The semiconductor device of claim 2 , wherein the carbide of the transition metal comprises rhenium carbide (Re x C, x is one or two).

4 . The semiconductor device of claim 1 , wherein the channel comprises a transition metal dichalcogenide (TMD).

5 . The semiconductor device of claim 4 , wherein the channel, the first contact pattern, and the second contact pattern comprise substantially the same transition metal.

6 . The semiconductor device of claim 1 , further comprising:
a first contact plug on the gate electrode; a second contact plug on the first source/drain electrode; and a third contact plug on the second source/drain electrode.

7 . The semiconductor device of claim 1 , wherein the gate insulating layer is provided on a lower surface of the gate electrode and a sidewall of the gate electrode.

8 . The semiconductor device of claim 1 , wherein the gate insulating layer is provided on a sidewall of each of the first contact pattern and the second contact pattern, and
wherein the gate insulating layer is provided on a sidewall and an upper surface of each of the first source/drain electrode and the second source/drain electrode.

9 . The semiconductor device of claim 1 , further comprising an insulating layer between the substrate and the channel.

10 . A semiconductor device, comprising:
a channel on a substrate, the channel comprising a two-dimensional (2D) material; a gate insulating layer on a portion of the channel; a gate electrode on the gate insulating layer; a first contact pattern on a first portion of the channel and a second contact pattern on a second portion of the channel, the first contact pattern and the second contact pattern comprising a carbide of a transition metal, a nitride of a transition metal or a carbonitride of a transition metal; and a first source/drain electrode on the first contact pattern and a second source/drain electrode on the second contact pattern, the first source/drain electrode and the second source/drain electrode comprising a metal.

11 . The semiconductor device of claim 10 , wherein the transition metal comprises at least one from among molybdenum (Mo), tungsten (W), rhenium (Re), technetium (Tc), niobium (Nb), tantalum (Ta), hafnium (Hf), zirconium (Zr), titanium (Ti) and vanadium (V).

12 . The semiconductor device of claim 11 , wherein the carbide of the transition metal comprises rhenium carbide (Re x C, x is one or two).

13 . The semiconductor device of claim 10 , wherein the channel comprises a transition metal dichalcogenide (TMD).

14 . The semiconductor device of claim 13 , wherein the channel, the first contact pattern, and the second contact pattern comprise substantially the same transition metal.

15 . The semiconductor device of claim 10 , further comprising:
a first contact plug on the gate electrode; a second contact plug on the first source/drain electrode; and a third contact plug on the second source/drain electrode.

16 . The semiconductor device of claim 10 , wherein the gate insulating layer is provided on a lower surface of the gate electrode and a sidewall of the gate electrode.

17 . The semiconductor device of claim 10 , wherein the gate insulating layer is provided on a sidewall of each of the first contact pattern and the second contact pattern, and
wherein the gate insulating layer is provided on a sidewall and an upper surface of each of the first source/drain electrode and the second source/drain electrode.

18 . The semiconductor device of claim 10 , further comprising an insulating layer between the substrate and the channel.

19 . A semiconductor device, comprising:
an insulating layer on a substrate; a channel on the insulating layer, the channel comprising a two-dimensional (2D) material; a first contact pattern on a first edge portion of the channel and a second contact pattern on a second edge portion of the channel, the first contact pattern and the second contact pattern comprising a carbide of a transition metal; a first source/drain electrode on the first contact pattern and a second source/drain electrode on the second contact pattern, the first source/drain electrode and the second source/drain electrode comprising a metal; a gate insulating layer on a central upper surface of the channel, on sidewalls of each of the first contact pattern and the second contact pattern, on sidewalls of each of the first source/drain electrode and the second source/drain electrode, and on an upper surface of each of the first source/drain electrode and the second source/drain electrode; a gate electrode on a portion of the gate insulating layer that is on the central upper surface of the channel, wherein the gate insulating layer is provided on a lower surface and a sidewall of the gate electrode; a first contact plug contacting an upper surface of the gate electrode; a second contact plug extending through the gate insulating layer and contacting an upper surface of the first source/drain electrode; and a third contact plug extending through the gate insulating layer and contacting an upper surface of the second source/drain electrode.

20 . The semiconductor device of claim 19 , wherein the channel comprises a transition metal dichalcogenide (TMD), and
wherein the channel, the first contact pattern, and the second contact pattern comprise substantially the same transition metal.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jinhong
• Koo Jiwan
• Hong Sahwan
• Kang Juncheol
• Seo Seunghwan
• Ahn Hogeun
• Choi Jaewoong
• Kuh Bongjin

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10D62/883

  Transition metal dichalcogenides, e.g. MoSe2 · CPC title