Surface treatment method for semiconductor substrates and surface treatment agent composition

Patent metadata

Field	Value
Publication number	US-2023282473-A1
Application number	US-202117999361-A
Country	US
Kind code	A1
Filing date	May 19, 2021
Priority date	May 21, 2020
Publication date	Sep 7, 2023
Grant date	—

Abstract

A surface treatment method for a semiconductor substrate of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, in which, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 50° or more at the room temperature of 25° C.

First claim

1 . A treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method comprising:
a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, wherein, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 500 or more at the room temperature of 25° C.

2 . (canceled)

3 . The treatment method according to claim 1 ,
wherein the surface treatment step is a step of forming a surface treatment agent layer on an entire main surface of the semiconductor substrate, and on a surface of the surface treatment agent layer, the IPA contact angle is 2° or more at the room temperature of 25° C. and/or the water contact angle is 55° or more at the room temperature of 25° C.

4 . (canceled)

5 . The treatment method according to claim 1 ,
wherein the surface treatment agent composition includes a solvent.

6 . The treatment method according to claim 5 ,
wherein the solvent includes an aprotic solvent.

7 . The treatment method according to claim 6 ,
wherein the solvent includes the aprotic solvent in a content of 100% by mass in 100% by mass of the solvent.

8 . The treatment method according to claim 6 ,
wherein the aprotic solvent includes one or two or more kinds selected from the group consisting of hydrocarbons, esters, ethers, ketones, halogen element-containing solvents, sulfoxides, carbonate solvents, derivatives of polyhydric alcohol, nitrogen element-containing solvents, and silicone solvents.

9 . The treatment method according to claim 6 ,
wherein the solvent includes at least one of following (i), (ii) and (iii), (i) a carbonate solvent or a lactone, (ii) propylene carbonate or γ-butyrolactone, and (iii) one or two or more kinds selected from the group consisting of derivatives of polyhydric alcohol, hydrocarbons, and ethers.

10 - 11 . (canceled)

12 . The treatment method according to am claim 1 ,
wherein the silylating agent includes a silicon compound represented by General Formula [1],
R 1 a Si(H) b X 4−a−b   [1]

(in General Formula [1], R 1 's each independently represent an organic group including a hydrocarbon group having 1 to 18 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, X's each independently represent a monovalent functional group in which an element bonded to an Si element is nitrogen, oxygen, carbon, or halogen, a represents an integer of 1 to 3, b represents an integer of 0 to 2, and a sum of a and b is 1 to 3).

13 . The treatment method according to claim 1 ,
wherein the silylating agent has a trialkylsilyl group, or an element bonded to an Si element, or both are nitrogen.

14 . (canceled)

15 . The treatment method according to claim 1 ,
wherein a content of the silylating agent is 0.1% by mass or more and 50% by mass or less in 100% by mass of the surface treatment agent composition.

16 . The treatment method according to claim 1 ,
wherein the surface treatment agent composition includes a catalyst.

17 . The treatment method according to claim 16 ,
wherein the catalyst includes one or two or more kinds selected from the group consisting of trimethylsilyltrifluoroacetate, trimethylsilyltrifluoromethanesulfonate, dimethylsilyltrifluoroacetate, dimethylsilyltrifluoromethanesulfonate, butyldimethylsilyltrifluoroacetate, butyldimethylsilyltrifluoromethanesulfonate, hexyldimethylsilyltrifluoroacetate, hexyldimethylsilyltrifluoromethanesulfonate, octyldimethylsilyltrifluoroacetate, octyldimethylsilyltrifluoromethanesulfonate, decyldimethylsilyltrifluoroacetate, decyldimethylsilyltrifluoromethanesulfonate, a sulfonic acid represented by General Formula [3], an anhydride of the sulfonic acid, a salt of the sulfonic acid, a sulfonic acid derivative represented by General Formula [4], a sulfonate represented by General Formula [5], a sulfonimide represented by each of General Formulae [6] and [7], a sulfonimide derivative represented by each of General Formulae [8] and [9], a sulfonmethide represented by General Formula [10], a sulfonmethide derivative represented by General Formula [11], an acid imidized product, a nitrogen-containing compound, a nitrogen-containing heterocyclic compound, and a silylated heterocyclic compound,
R 8 —S(═O) 2 OH  [3]

[in General Formula [3], R 8 represents a group selected from the group consisting of a monovalent hydrocarbon group having 1 to 8 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, and a hydroxyl group]
R 8′ —S(═O) 2 O—Si(H) 3-r (R 9 ) r   [4]

[in General Formula [4], R 8′ represents a monovalent hydrocarbon group having 1 to 8 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, R 9 's each independently represent at least one group selected from monovalent hydrocarbon groups having 1 to 18 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, and r represents an integer of 1 to 3]
R 10 —S(═O) 2 OR 11   [5]

[in General Formula [5], R 10 represents a group selected from the group consisting of a monovalent hydrocarbon group having 1 to 8 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, and a fluorine element, and R 11 represents a monovalent alkyl group having 1 to 18 carbon atoms]
(R 12 —S(═O) 2 ) 2 NH  [6]

[in General Formula [6], R 12 's each independently represent a group selected from the group consisting of a monovalent hydrocarbon group having 1 to 8 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, and a fluorine element]

[in Genera Formula [7], R 13 represents a divalent hydrocarbon group having 1 to 8 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements]
((R 14 —S(═O) 2 ) 2 N) s Si(H) t (R 15 ) 4−s−t   [8]

[in General Formula [8], R 14 's each independently represent a group selected from the group consisting of a monovalent hydrocarbon group having 1 to 8 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, and a fluorine element, R 15 's each independently represent a monovalent hydrocarbon group having 1 to 18 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, s represents an integer of 1 to 3, t represents an integer of 0 to 2, and a sum of s and t is 3 or less]

[in General Formula [9], R 16 's each independently represent a divalent hydrocarbon group having 1 to 8 carbon atoms, in which a part or all of hydrogen elements may be replaced with fluorine elements, R 17 's each independently represent a monovalent hydrocarbon group having 1 to 18 carbon atoms, in which a part or all of hydrogen elements may be replaced w

Assignees

• Central Glass Co Ltd

Inventors

• Okumura Yuzo
• Fukui Yuki
• Shiota Saori
• Terui Yoshiharu
• Kumon Soichi

Classifications

• H10P70/23 Primary

  during, before or after processing of insulating materials · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title

• C11D2111/22

  Electronic devices, e.g. PCBs or semiconductors · CPC title