Method of manufacture of single crystal synthetic diamond material
US-11643750-B2 · May 9, 2023 · US
Method of manufacture of single crystal synthetic diamond material
US2023272551A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023272551-A1 |
| Application number | US-202318143557-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 4, 2023 |
| Priority date | Jul 6, 2018 |
| Publication date | Aug 31, 2023 |
| Grant date | — |
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- Title
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Abstract
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A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method of manufacturing synthetic single crystal diamond material using a chemical vapour deposition process, the method comprising: providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10 7 cm −2 ; locating the synthetic single crystal diamond substrate wafer over a substrate holder within a chemical vapour deposition reactor; feeding process gases into the reactor, the process gases including a gas comprising carbon; growing synthetic diamond material on a surface of the single crystal diamond substrate wafer at a growth temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm such that the grown synthetic diamond material is crack free.
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Classifications
- C30B25/205Primary
the substrate being of insulating material · CPC title
by irradiation or electric discharge · CPC title
Controlling or regulating (controlling or regulating in general G05) · CPC title
- C30B29/04Primary
Diamond · CPC title
- C23C16/27Primary
Diamond only · CPC title
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- What does patent US2023272551A1 cover?
- A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a che…
- Who is the assignee on this patent?
- Element Six Tech Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B25/205. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Aug 31 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).