Chalcogenide memory device compositions

Patent metadata

Field	Value
Publication number	US-2023270025-A1
Application number	US-202217676708-A
Country	US
Kind code	A1
Filing date	Feb 21, 2022
Priority date	Feb 21, 2022
Publication date	Aug 24, 2023
Grant date	—

Abstract

Methods, systems, and devices for chalcogenide memory device compositions are described. A memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. A chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (S) or may be a combination of sulfur and one or more other elements, such as selenium (Se). In addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (Ge), at least one Group-III element, or arsenic (As).

First claim

What is claimed is:

1 . A composition of matter, comprising:
a component comprising sulfur, wherein the component comprising sulfur is in an amount greater than or equal to 40 atomic percent (at. %) of the composition; germanium in an amount ranging from 8 at. % to 35 at. % of the composition; and at least one element selected from a group consisting of boron, aluminum, gallium, indium, and thallium in an amount ranging from 1 at. % to 15 at. % of the composition.

2 . The composition of claim 1 , wherein the component comprising sulfur further comprises selenium.

3 . The composition of claim 2 , wherein the composition comprises the sulfur in a first amount and the selenium in a second amount, the first amount greater than or equal to one-third of the second amount.

4 . The composition of claim 1 , wherein the composition includes no selenium.

5 . The composition of claim 1 , wherein the composition comprises the sulfur in an amount greater than or equal to 10% of the composition.

6 . The composition of claim 1 , wherein the component comprising sulfur further comprises oxygen.

7 . The composition of claim 1 , further comprising:
arsenic in an amount less than or equal to 30 at. % of the composition.

8 . The composition of claim 1 , wherein the germanium is in an amount ranging from 20 at. % to 35 at. % of the composition.

9 . The composition of claim 1 , wherein the at least one element selected from the group comprises indium in an amount ranging from 1 at. % to 15 at. % of the composition.

10 . The composition of claim 1 , wherein the at least one element selected from the group comprises boron in an amount ranging from 1 at. % to 15 at. % of the composition.

11 . The composition of claim 1 , wherein the at least one element selected from the group comprises aluminum in an amount ranging from 1 at. % to 15 at. % of the composition.

12 . The composition of claim 1 , wherein the at least one element selected from the group comprises gallium in an amount ranging from 1 at. % to 15 at. % of the composition.

13 . The composition of claim 1 , wherein the at least one element selected from the group comprises thallium in an amount ranging from 1 at. % to 15 at. % of the composition.

14 . An apparatus, comprising:
a memory cell comprising a chalcogenide material, the chalcogenide material comprising:
a component comprising sulfur, wherein the component comprising sulfur is in an amount greater than or equal to 40 atomic percent (at. %) of the chalcogenide material;
germanium in an amount ranging from 8 at. % to 35 at. % of the chalcogenide material; and
at least one element selected from a group consisting of boron, aluminum, gallium, indium, and thallium in an amount ranging from 1 at. % to 15 at. % of the chalcogenide material.

15 . The apparatus of claim 14 , wherein the component comprising sulfur further comprises selenium.

16 . The apparatus of claim 14 , wherein the chalcogenide material includes no selenium.

17 . The apparatus of claim 14 , wherein the chalcogenide material comprises the sulfur in an amount greater than or equal to 10% of the composition.

18 . The apparatus of claim 14 , wherein the component comprising sulfur further comprises oxygen.

19 . The apparatus of claim 14 , wherein the memory cell comprises a storage element operable to store a logic value, the storage element comprising the chalcogenide material.

20 . The apparatus of claim 19 , wherein the storage element comprises a self-selecting storage element.

21 . The apparatus of claim 19 , wherein the storage element is operable to store a first logic value based at least in part on a voltage of a first polarity being applied across the chalcogenide material and a second logic value based at least in part on a voltage of a second polarity being applied across the chalcogenide material.

22 . A apparatus, comprising:
a first access line; a second access line; and a memory cell that includes a chalcogenide material comprising sulfur, germanium, and at least one of boron, aluminum, gallium, indium, or thallium, wherein the first access line is in electronic communication with the second access line via the memory cell.

23 . The apparatus of claim 22 , wherein:
within the chalcogenide material, a component comprising the sulfur comprises greater than or equal to 40 atomic percent (at. %) of the chalcogenide material; the germanium is in an amount ranging from 8 at. % to 35 at. % of the chalcogenide material; and the at least one of boron, aluminum, gallium, indium, or thallium is in an amount ranging from 1 at. % to 15 at. % of the chalcogenide material.

24 . The apparatus of claim 23 , wherein the component comprising the sulfur further comprises selenium, oxygen, or both.

25 . The apparatus of claim 22 , wherein the memory cell comprises a storage element operable to store a logic value, the storage element comprising the chalcogenide material.

Assignees

• Micron Technology Inc

Inventors

• Collins Dale W
• Fantini Paolo
• Fratin Lorenzo
• Varesi Enrico

Classifications

• C01B17/0243 Primary

  Other after-treatment of sulfur · CPC title

• C01B19/04

  Binary compounds {including binary selenium-tellurium compounds (C01B19/004, C01B19/005, C01B19/007 take precedence)} · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10B63/84

  arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays · CPC title

• H10N70/882

  Compounds of sulfur, selenium or tellurium, e.g. chalcogenides · CPC title