Semiconductor device and method of manufacturing semiconductor device
US-2024074198-A1 · Feb 29, 2024 · US
arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B63/84 |
| Official title | {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays} |
| Display label | arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays |
| Total patents | 3,468 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 306 |
| 2016 | 252 |
| 2017 | 271 |
| 2018 | 218 |
| 2019 | 308 |
| 2020 | 392 |
| 2021 | 411 |
| 2022 | 359 |
| 2023 | 329 |
| 2024 | 300 |
| 2025 | 265 |
| 2026 | 57 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Resistive memory devices
US-9224945-B2 · Dec 29, 2015 · US
Memory device having a stacked variable resistance layer
US-9202845-B2 · Dec 1, 2015 · US
Resistance change memory and manufacturing method thereof
US-9203021-B2 · Dec 1, 2015 · US
Memory including a selector switch on a variable resistance memory cell
US-9196355-B2 · Nov 24, 2015 · US
Fabrication method of vertical type semiconductor memory apparatus
US-9196832-B2 · Nov 24, 2015 · US
Stackable non-volatile memory
US-9196356-B2 · Nov 24, 2015 · US
Memory device and method of manufacturing memory device
US-2015325628-A1 · Nov 12, 2015 · US
Phase change memory stack with treated sidewalls
US-2015318038-A1 · Nov 5, 2015 · US
Phase change memory stack with treated sidewalls
US-2015318467-A1 · Nov 5, 2015 · US
Amorphous silicon doped with fluorine for selectors of resistive random access memory cells
US-9177916-B1 · Nov 3, 2015 · US
Methods of fabricating memory devices
US-9172039-B2 · Oct 27, 2015 · US
Organic molecular memory and method of manufacturing the same
US-9172053-B2 · Oct 27, 2015 · US
Three dimensional semiconductor integrated circuit having gate pick-up line and method of manufacturing the same
US-9166015-B1 · Oct 20, 2015 · US
Nonvolatile semiconductor memory device and method of manufacturing the same
US-2015287913-A1 · Oct 8, 2015 · US
Vertical structure non-volatile memory device having insulating regions that are formed as air gaps
US-2015263021-A1 · Sep 17, 2015 · US
Transistor device and method of making thereof
US-2015263074-A1 · Sep 17, 2015 · US
Rram array having lateral rram cells and vertical conducting structures
US-2015263073-A1 · Sep 17, 2015 · US
Variable resistive memory device and method of fabricating the same and method of driving the same
US-2015255717-A1 · Sep 10, 2015 · US
Semiconductor memory device
US-2015255513-A1 · Sep 10, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B63/84?
- CPC H10B63/84 is the Cooperative Patent Classification code for “arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays.”
- How many patents are filed under CPC H10B63/84 (arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays)?
- Our database includes 3,468 publications tagged with this CPC code.
- Is patent activity under CPC H10B63/84 growing?
- Publication counts under this code: 300 in 2024 vs 265 in 2025 (latest complete years).