Image sensor and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2023225139-A1
Application number	US-202318122718-A
Country	US
Kind code	A1
Filing date	Mar 17, 2023
Priority date	Nov 23, 2020
Publication date	Jul 13, 2023
Grant date	—

Abstract

The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer

First claim

What is claimed is:

1 . An image sensor, comprising:
a substrate; a first circuit layer on the substrate; at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material; and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer.

2 . The image sensor according to claim 1 , wherein the general formula of the perovskite material is ABX 3 , where A contains methylamine ions, formamidine ions and metal cesium ions (Cs+), B contains metal cations (Pb2+, Sn2+, Bi2+), and X contains halogen anions (Cl—, Br—,I—).

3 . The image sensor according to claim 1 , wherein the perovskite material comprises MAPbI 3 , FASnCl 3 , FASnBr 3 , FASnI 3 , FASnClxBryI 3 -x-y, MASnCl 3 , MASnBr 3 , MASnI 3 , MASnClxBryI 3 -x-y, CsSnCl 3 , CsSnBr 3 , CsSnI 3 , CsSnClxBryI 3 -x-y, FAPbCl 3 , FAPbBr 3 , FAPbI 3 , FAPbClxBryI 3 -x-y, MAPbCl 3 , MAPbBr 3 , MAPbI 3 , MAPbClxBryI 3 -x-y, CsPbCl 3 , CsPbBr 3 , CsPbI 3 , CsPbClxBryI 3 -x-y, FABiCl 3 , FABiBr 3 , FABiI 3 , FABiClxBryI 3 -x-y, MABiCl 3 , MABiBr 3 , MABiI 3 , MABiClxBryI 3 -x-y, CsBiCl 3 , CsBiBr 3 , CsBiI 3 , and CsBiClxBryI 3 -x-y, where parameters x and y range from 0 to 3.

4 . The image sensor according to claim 1 , wherein the perovskite material contains N-type conductivity type, and the upper material layer has P-type conductivity type.

5 . The image sensor according to claim 1 , wherein the upper material layer comprises a metal oxide layer.

6 . The image sensor according to claim 5 , wherein the upper material layer comprises MnO 3 (molybdenum trioxide), V 2 O 5 , WO 3 , Si, Ge, GaAs, GaN, WSe 2 , NiO, Cu 2 O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

7 . The image sensor according to claim 1 , further comprising at least one optical device located on the nanowire photodiode.

8 . The image sensor according to claim 1 , further comprises a second device, the second device at least comprises a second substrate and a second circuit layer, and a contact structure passing through the substrate and electrically connecting the first circuit layer and the second circuit layer.

9 . The image sensor according to claim 1 , wherein a top surface of the precursor layer and a top surface of the lower material layer are disposed on different levels.

10 . A method for forming an image sensor, comprising:
providing a substrate; forming a first circuit layer on the substrate; forming at least one nanowire photodiode on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction is formed between the lower material layer and the upper material layer, wherein the lower material layer comprises perovskite material; and forming a precursor layer under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer.

11 . The method according to claim 10 , wherein the general formula of the perovskite material is ABX 3 , where A contains methylamine ions, formamidine ions and metal cesium ions (Cs+), B contains metal cations (Pb2+, Sn2+, Bi2+), and X contains halogen anions (Cl—, Br—,I—).

12 . The method according to claim 11 wherein the perovskite material comprises MAPbI 3 , FASnCl 3 , FASnBr 3 , FASnI 3 , FASnClxBryI 3 -x-y, MASnCl 3 , MASnBr 3 , MASnI 3 , MASnClxBryI 3 -x-y, CsSnCl 3 , CsSnBr 3 , CsSnI 3 , CsSnClxBryI 3 -x-y, FAPbCl 3 , FAPbBr 3 , FAPbI 3 , FAPbClxBryI 3 -x-y, MAPbCl 3 , MAPbBr 3 , MAPbI 3 , MAPbClxBryI 3 -x-y, CsPbCl 3 , CsPbBr 3 , CsPbI 3 , CsPbClxBryI 3 -x-y, FABiCl 3 , FABiBr 3 , FABiI 3 , FABiClxBryI 3 -x-y, MABiCl 3 , MABiBr 3 , MABiI 3 , MABiClxBryI 3 -x-y, CsBiCl 3 , CsBiBr 3 , CsBiI 3 , and CsBiClxBryI 3 -x-y, where parameters x and y range from 0 to 3.

13 . The method according to claim 10 , wherein the perovskite material contains n-type conductivity type.

14 . The method according to claim 10 , wherein the upper material layer comprises a metal oxide layer, and the upper material layer has a p-type conductivity type.

15 . The method according to claim 14 , wherein the upper material layer comprises MnO 3 (molybdenum trioxide), V 2 O 5 , WO 3 , Si, Ge, GaAs, GaN, WSe 2 , NiO, Cu 2 O, CuO, TCNQ (Tetracyanoquinodimethane), and F4-TCNQ.

16 . The method according to claim 10 , further comprising forming at least one optical device on the nanowire photodiode.

17 . The method according to claim 10 , further comprising forming a second device, the second device at least comprises a second substrate and a second circuit layer, and a contact structure passing through the substrate and electrically connecting the first circuit layer and the second circuit layer.

18 . The method according to claim 10 , wherein the lower material layer is formed by chemical vapor deposition (CVD) or electrochemical method, and the processing temperature is lower than 400 degrees Celsius.

19 . The method according to claim 10 , wherein the method for forming at least the nanowire photodiode comprises:
forming a dielectric layer on the first circuit layer, and a plurality of arrays of nanowire holes are etched on the dielectric layer.

20 . The method according to claim 19 , wherein the method for forming at least the nanowire photodiode further comprises:
forming a lower material layer in the nanowire holes, and filling part of the nanowire holes with the lower material layer by a chemical mechanical polishing or an etching back method.

21 . The method according to claim 20 , wherein the method for forming at least the nanowire photodiode further comprises:
forming an upper material layer on the lower material layer and fills the nanowire holes, wherein a P-N junction or a Schottky junction is formed between the lower material layer and the upper material layer.

22 . The method according to claim 10 , wherein a top surface of the precursor layer and a top surface of the lower material layer are disposed on different levels.

Assignees

• United Microelectronics Corp

Inventors

• Zhan Zhaoyao
• Ding Qianwei
• Jiang Xiaohong
• Tey Ching Hwa

Classifications

• H10K39/32 Primary

  Organic image sensors · CPC title

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title