Method of forming low-k material layer with high-frequency power, structure including the layer, and system for forming same

Patent metadata

Field	Value
Publication number	US-2023207308-A1
Application number	US-202218088041-A
Country	US
Kind code	A1
Filing date	Dec 23, 2022
Priority date	Dec 28, 2021
Publication date	Jun 29, 2023
Grant date	—

Abstract

Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.

First claim

What is claimed is:

1 . A method of forming a low-k material layer on a surface of a substrate, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor system; providing one or more precursors to the reaction chamber; and providing first plasma power to polymerize the one or more precursors within the reaction chamber to form low-k material, wherein a frequency of the first plasma power is between about 27 MHz and about 100 MHz, and wherein the first plasma power is greater than 2 kW.

2 . The method of claim 1 , wherein the first plasma power is between about 2 kW and about 5 kW.

3 . The method of claim 1 , wherein a temperature within the reaction chamber during the step of providing one or more precursors to the reaction chamber is between about 200° C. and about 450° C. or between about 300° C. and about 400° C.

4 . The method of claim 1 , wherein a pressure within the reaction chamber during the step of providing one or more precursors to the reaction chamber is between about 1 torr and about 20 torr or between about 2 torr and about 10 torr.

5 . The method of claim 1 , further comprising providing a second plasma power to manipulate mechanical properties of the low-k material.

6 . The method of claim 5 , wherein a frequency of the second plasma power is between about 400 kHz and about 500 kHz.

7 . The method of claim 5 , wherein the second plasma power is between about 10 W and about 300 W.

8 . The method of claim 1 , wherein the one or more precursors comprise a compound comprising one or more of Si—C—Si and Si—O—Si bonds.

9 . The method of claim 1 , wherein the one or more precursors comprise a compound comprising a cyclic structure.

10 . The method of claim 9 , wherein the cyclic structure comprises silicon.

11 . The method of claim 9 , wherein the cyclic structure comprises silicon and oxygen.

12 . The method of claim 1 , wherein the one or more precursors comprise a compound comprising an organosilicon compound.

13 . The method of claim 1 , wherein the one or more precursors comprise one or more of dimethyldimethoxysilane (DMDMOS), octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TMCTS), octamethoxydodecasiloxane (OMODDS), octamethoxycyclioiloxane, diethoxymethylsilane (DEMS), dimethoxymethylsilane (DMOMS), phenoxydimethylsilane (PODMS), dimethyldioxosilylcyclohexane (DMDOSH), 1,3-dimethoxytetramethyldisiloxane (DMOTMDS), dimethoxydiphenylsilane (DMDPS), and dicyclopentyldimethoxysilane (DcPDMS).

14 . The method of claim 1 , wherein at least one of the one or more precursors comprises a ring structure comprising a chemical formula represented by —(Si(R 1 ,R 2 )—O) n —, where n ranges from about 3 to about 10.

15 . The method of claim 1 , wherein at least one of the one or more precursors comprises a linear structure comprising a chemical formula represented by R 3 —(Si(R 1 ,R 2 ) m —O (m-1) )—R 4 , where m can range from about 1 to about 7.

16 . The method of claim 1 , wherein the reactor system comprises a capacitively coupled plasma (CCP) reactor.

17 . A structure comprising:
a substrate; and a low-k material layer formed according to claim 1 .

18 . The structure of claim 17 , wherein a dielectric constant of the low-k material is less than 3.

19 . The structure of claim 17 , wherein the dielectric constant varies by less than 6 percent after exposure to an oxygen plasma.

20 . A reactor system comprising:
a reaction chamber;
a precursor source coupled to the reaction chamber;
an inert gas source coupled to the reaction chamber;
a vacuum source coupled to the reaction chamber; and
a controller configured to operate at least one plasma power source to provide a plasma power of between about 2 kW and about 5 kW with a power frequency between about 27 MHz and about 100 MHz to form a low-k material layer on a surface of a substrate.

Assignees

• Asm Ip Holding Bv

Inventors

• Kaneko Chie
• Yanagisawa Ippei
• Huang Yu Min

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6686 Primary

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title